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SGM61163XTRI14G/TR
Micro
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1 | Conv DC to DC Single Step Down 4.5V to 18V 14-Pin TQFN T/R | Other | SGM61163XTRI14G/TR |
3
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DS1023-16-1*16B81XTX1
Connfly
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0 | Socket; pin strips; female; straight; 2.54mm; SMT; 1x16; gold flash | Other | DS1023-16-1*16B81XTX1 |
2
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TPS61165DRVRG4
Texas Instruments
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1 | LED DRVR 10Segment 3.3V/5V/9V/12V/15V 6-Pin WSON EP T/R | Small Outline No-lead | TPS61165DRVRG4 |
3
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TPS61160DRVRG4
Texas Instruments
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1 | LED Lighting Drivers White LED Drvr | Small Outline No-lead | TPS61160DRVRG4 |
3
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EDZTE6116B
ROHM Semiconductor
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1 | ROHM EDZTE6116B Zener Diode, 16V 150 mW SMT 2-Pin SOD-523 | Small Outline Diode Flat Lead | EDZTE6116B |
3
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TPS61169DCKR
Texas Instruments
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1 | TPS61169 38-V High-Current Boost WLED Driver | SOT23 (5-Pin) | TPS61169DCKR |
3
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CY8C6116BZI-F54
Infineon
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1 | CY8C6116BZI-F54 | BGA | CY8C6116BZI-F54 |
3
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TPS61160ADRVT
Texas Instruments
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1 | White LED Driver with PWM Brightness Control in 2mm x 2mm Package. Up to 10 LEDs in Series | Small Outline No-lead | TPS61160ADRVT |
3
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ATMEGA2561-16AUR
Microchip
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1 | 8-bit Microcontrollers - MCU AVR 256K FLSH 4K EE 8K SRAM ADC 5V-16MHz | Quad Flat Packages | ATMEGA2561-16AUR |
3
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6116522-1
TE Connectivity
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1 | Body Features: PCB Ground Tab Location -3.43 MM | Modular Jack Latch Orientation Inverted - Latch Up | PCB Ground Tab Location -.135 INCH | Connector Profile Standard | Shield Material Copper Zinc Alloy | Shield Plating Material Nickel | Configuration Features: Number of PCB Ground Tabs 4 | Number of Loaded Positions 8 | Status Light Type Not Illuminated | Number of Positions 8 | PCB Mount Orientation Right Angle | Port Matrix Configuration 1 x 2 | Multiple Port Configuration Ganged | Number of Panel Ground | Other | 6116522-1 |
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6116LA25DB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116LA25DB |
3
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6116SA15TPG
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA15TPG |
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6116SA25SOG
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116SA25SOG |
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6116SA20SOG8
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116SA20SOG8 |
2
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1961164
Phoenix Contact
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1 | PCB header, nominal cross section: 0.5 mm?, color: black, nominal current: 4 A, rated voltage (III/2): 160 V, contact surface: Tin, type of contact: Male connector, Number of potentials: 8, Number of rows: 2, Number of positions per row: 4, number of connections: 8, product range: MCD 0,5/..-G1-HT, pitch: 2.5 mm, mounting: THR soldering, pin layout: Linear pinning, solder pin [P]: 3.8 mm, Stecksystem: MICRO COMBICON - FK-MC 0,5, Locking: without, type of packaging: packed in cardboard, Standard component ma | Other | 1961164 |
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6116SA55TDB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 6116SA55TDB |
2
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6116202-1
TE Connectivity
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1 | Body Features: PCB Ground Tab Location 3.89 MM | Connector Profile Standard | Modular Jack Latch Orientation Inverted - Latch Up | Shield Plating Material Tin | Shield Material Copper Zinc Alloy | PCB Ground Tab Location .153 INCH | Configuration Features: Connector Contact Density Standard | Number of Positions 8 | Status Light Type Not Illuminated | Port Configuration Single Port | PCB Mount Orientation Vertical | Number of PCB Ground Tabs 2 | Port Matrix Configuration 1 x 1 | Number of Loaded Positions 8 | Other | 6116202-1 |
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6116LA150TDB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 6116LA150TDB |
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6116LA20TPGI
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116LA20TPGI |
3
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6116SA20SOG
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116SA20SOG |
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6116LA45DB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116LA45DB |
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6116SA25SOGI
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116SA25SOGI |
2
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6116LA25SOG8
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116LA25SOG8 |
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6116SA20DB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA20DB |
3
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6116SA70DB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA70DB |
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