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611-6 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Conv DC to DC Single Step Down 4.5V to 18V 14-Pin TQFN T/R Other SGM61163XTRI14G/TR 1 Download Model
Part Image Part Image 0 Socket; pin strips; female; straight; 2.54mm; SMT; 1x16; gold flash Other DS1023-16-1*16B81XTX1 1 Download Model
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TPS61165DRVRG4 Texas Instruments
1 LED DRVR 10Segment 3.3V/5V/9V/12V/15V 6-Pin WSON EP T/R Small Outline No-lead TPS61165DRVRG4 1 Download Model
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TPS61160DRVRG4 Texas Instruments
1 LED Lighting Drivers White LED Drvr Small Outline No-lead TPS61160DRVRG4 1 Download Model
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EDZTE6116B ROHM Semiconductor
1 ROHM EDZTE6116B Zener Diode, 16V 150 mW SMT 2-Pin SOD-523 Small Outline Diode Flat Lead EDZTE6116B 1 Download Model
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TPS61169DCKR Texas Instruments
1 TPS61169 38-V High-Current Boost WLED Driver SOT23 (5-Pin) TPS61169DCKR 1 Download Model
Part Image Part Image 1 CY8C6116BZI-F54 BGA CY8C6116BZI-F54 1 Download Model
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TPS61160ADRVT Texas Instruments
1 White LED Driver with PWM Brightness Control in 2mm x 2mm Package. Up to 10 LEDs in Series Small Outline No-lead TPS61160ADRVT 1 Download Model
Part Image Part Image 1 8-bit Microcontrollers - MCU AVR 256K FLSH 4K EE 8K SRAM ADC 5V-16MHz Quad Flat Packages ATMEGA2561-16AUR 1 Download Model
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6116522-1 TE Connectivity
1 Body Features: PCB Ground Tab Location -3.43 MM | Modular Jack Latch Orientation Inverted - Latch Up | PCB Ground Tab Location -.135 INCH | Connector Profile Standard | Shield Material Copper Zinc Alloy | Shield Plating Material Nickel | Configuration Features: Number of PCB Ground Tabs 4 | Number of Loaded Positions 8 | Status Light Type Not Illuminated | Number of Positions 8 | PCB Mount Orientation Right Angle | Port Matrix Configuration 1 x 2 | Multiple Port Configuration Ganged | Number of Panel Ground Other 6116522-1 1 Download Model
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6116LA25DB Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Dual-In-Line Packages 6116LA25DB 1 Download Model
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6116SA15TPG Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Dual-In-Line Packages 6116SA15TPG 1 Download Model
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6116SA25SOG Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Small Outline Packages 6116SA25SOG 1 Download Model
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6116SA20SOG8 Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Small Outline Packages 6116SA20SOG8 1 Download Model
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1961164 Phoenix Contact
1 PCB header, nominal cross section: 0.5 mm?, color: black, nominal current: 4 A, rated voltage (III/2): 160 V, contact surface: Tin, type of contact: Male connector, Number of potentials: 8, Number of rows: 2, Number of positions per row: 4, number of connections: 8, product range: MCD 0,5/..-G1-HT, pitch: 2.5 mm, mounting: THR soldering, pin layout: Linear pinning, solder pin [P]: 3.8 mm, Stecksystem: MICRO COMBICON - FK-MC 0,5, Locking: without, type of packaging: packed in cardboard, Standard component ma Other 1961164 1 Download Model
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6116SA55TDB Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Ceramic Dual-In-Line Packages 6116SA55TDB 1 Download Model
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6116202-1 TE Connectivity
1 Body Features: PCB Ground Tab Location 3.89 MM | Connector Profile Standard | Modular Jack Latch Orientation Inverted - Latch Up | Shield Plating Material Tin | Shield Material Copper Zinc Alloy | PCB Ground Tab Location .153 INCH | Configuration Features: Connector Contact Density Standard | Number of Positions 8 | Status Light Type Not Illuminated | Port Configuration Single Port | PCB Mount Orientation Vertical | Number of PCB Ground Tabs 2 | Port Matrix Configuration 1 x 1 | Number of Loaded Positions 8 Other 6116202-1 1 Download Model
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6116LA150TDB Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Ceramic Dual-In-Line Packages 6116LA150TDB 1 Download Model
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6116LA20TPGI Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Dual-In-Line Packages 6116LA20TPGI 1 Download Model
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6116SA20SOG Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Small Outline Packages 6116SA20SOG 1 Download Model
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6116LA45DB Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Dual-In-Line Packages 6116LA45DB 1 Download Model
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6116SA25SOGI Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Small Outline Packages 6116SA25SOGI 1 Download Model
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6116LA25SOG8 Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Small Outline Packages 6116LA25SOG8 1 Download Model
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6116SA20DB Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Dual-In-Line Packages 6116SA20DB 1 Download Model
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6116SA70DB Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Dual-In-Line Packages 6116SA70DB 1 Download Model
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