MBR-1 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	MBR1645CT LUGUANG ELECTRONIC	1	SCHOTTKY BARRIER RECTIFIERS Case: TO-220AB	Transistor Outline, Vertical	MBR1645CT	3D model available Symbol and footprint available 3	1 Download Model
	MBR10150CT LITTELFUSE	1	LITTELFUSE - MBR10150CT - SCHOTTKY RECT, 150V, 10A, TO-220AB	Transistor Outline, Vertical	MBR10150CT	3D model available Symbol and footprint available 3	1 Download Model
	MBR10100CT LITTELFUSE	1	Schottky Diodes & Rectifiers 2x 5A 100V Rectifier	Other	MBR10100CT	3D model available Symbol and footprint available 3	1 Download Model
	MBR1645 Taiwan Semiconductor	1	Taiwan Semi MBR1645, Schottky Diode, 60V 16A, 2-Pin TO-220AC	Other	MBR1645	3D model available Symbol and footprint available 3	1 Download Model

	MBR10100CT-LJ Diodes Incorporated	1	DIODE ARRAY 100V 5A TO220AB	Transistor Outline, Vertical	MBR10100CT-LJ	3D model available Symbol and footprint available 3	1 Download Model
	MBR160G Galaxy	0	Schottky Power Rectifier	Small Outline Diode	MBR160G	3D model available Symbol and footprint available 3	1 Download Model
	MBR1645 SMC Diode Solutions	1	DIODE SCHOTTKY 45V 16A TO220AC	Transistor Outline, Vertical	MBR1645	3D model available Symbol and footprint available 3	1 Download Model
	MBR1645CT-BP MCC	1	Schottky Barrier Rectifiers	Transistor Outline, Vertical	MBR1645CT-BP	3D model available Symbol and footprint available 3	1 Download Model
	MBR1040F PANJIT	1	Power Schottky (IF≧1A) - MBR1040F , Standard, 40V, 10A, ITO-220AC	Transistor Outline, Vertical	MBR1040F	3D model available Symbol and footprint available 3	1 Download Model
	MBR16100FCT PANJIT	1	Power Schottky (IF≧1A) - MBR16100FCT , Standard, 100V, 16A, ITO-220AB	Transistor Outline, Vertical	MBR16100FCT	3D model available Symbol and footprint available 3	1 Download Model
	MBR10100 onsemi	1	Guard−Ring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction AEC−Q101 Qualified and PPAP Capable NRVB Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements All Packages are Pb−Free*	Transistor Outline, Vertical	MBR10100	3D model available Symbol and footprint available 3	1 Download Model
	MBR1H100SFT3G onsemi	1	Guardring for Stress Protection; Low Forward Voltage; 175°C Operating Junction Temperature; Epoxy Meets UL94 V-0; Package Designed for Optimal Automated Board Assembly; ESD Ratings: Machine Model = C, Human Body Model = 3B; This is a Pb-Free Device Mechanical Characteristics:; Reel Options: MBR1H100SFT3G = 10,000 per 13 in reel/8 mm tape; Device Marking: L1H; Polarity Designator: Cathode Band; Weight: 11.7 mg (approximately); Case: Epoxy, Molded; Lead Finish: 100% Matte Sn (Tin); Lead and Mounting Surface T	Small Outline Diode Flat Lead	MBR1H100SFT3G	3D model available Symbol and footprint available 3	1 Download Model
	MBR140P1Q-TP MCC	1	200mW, 40 Volt Schottky Barrier Diode, DFN1608-2L	Other	MBR140P1Q-TP	3D model not available Symbol and footprint available 2	1 Download Model
	MBR120ESFT3G onsemi	1	Guardring for Stress Protection; Low Leakage; 150 C Operating Junction Temperature; Epoxy Meets UL94, VO at 1/8 inch; Package Designed for Optimal Automated Board Assembly; ESD Ratings: Machine Model = C, Human Body Model = 3B; All Packages are Pb-Free; NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable	Small Outline Diode Flat Lead	MBR120ESFT3G	3D model available Symbol and footprint available 3	1 Download Model
	MBR10150CTH-BP MCC	1	Schottky Barrier Rectifiers	Transistor Outline, Vertical	MBR10150CTH-BP	3D model available Symbol and footprint available 3	1 Download Model

	MBR130T3G onsemi	1	Guardring for Stress Protection; Low Forward Voltage; 125°C Operating Junction Temperature; Epoxy Meets UL94, VO at 1/8"; Package Designed for Optimal Automated Board Assembly; ESD Ratings: Machine Model, C; Human Body Model, 3 Mechanical Characteristics; Reel Options: MBR130T1 = 3,000 per 7, reel/8 mm tape MBR130T3 = 10,000 per 13, reel/8 mm tape; Device Marking: B13; Polarity Designator: Cathode Band; Weight: 11.7 mg (approximately); Case: Epoxy, Molded; Finish: All External Surfaces Corrosion Resistant a	Small Outline Diode	MBR130T3G	3D model available Symbol and footprint available 3	1 Download Model
	MBR18AFC PANJIT	1	Power Schottky (IF≧1A) - MBR18AFC , Standard, 80V, 1A, SMAF-C	Small Outline Diode Flat Lead	MBR18AFC	3D model available Symbol and footprint available 3	1 Download Model
	MBR1060-BP MCC	1	Guard Ring for Transient Protection• Low Power Loss High Efficiency• High Surge Capacity, High Current Capability• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix DesignatesCompliant. See Ordering Information)• Epoxy Meets UL 94 V-0 Flammability RatingHalogen FreeAvailable Upon Request By Adding Suffix "-HF"	Transistor Outline, Vertical	MBR1060-BP	3D model available Symbol and footprint available 3	1 Download Model
	MBR140ESFT1G onsemi	1	SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 40 VOLTS , 560mV @ 1A , 30µA , -55°C ~ 175°C	Other	MBR140ESFT1G	3D model available Symbol and footprint available 3	1 Download Model
	MBR140ESFT3G onsemi	1	Obsolete - 1.0 A, 40 V, Schottky Power Rectifier, Surface Mount	Small Outline Diode Flat Lead	MBR140ESFT3G	3D model available Symbol and footprint available 3	1 Download Model
	MBR1040FCT PANJIT	1	Power Schottky (IF≧1A) - MBR1040FCT , Standard, 40V, 10A, ITO-220AB	Transistor Outline, Vertical	MBR1040FCT	3D model available Symbol and footprint available 3	1 Download Model
	MBR10200FCT-BP-HF MCC	1	10 Amp High Voltage Power Schottky Barrier Rectifier 200 Volts	Transistor Outline, Vertical	MBR10200FCT-BP-HF	3D model available Symbol and footprint available 3	1 Download Model
	MBR10100G onsemi	1	Low Forward Voltage; Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds; Low Power Loss/High Efficiency; Epoxy Meets UL94, VO at 1/8; 150 °C Operating Junction Temperature; Case: Epoxy, Molded; Low Stored Charge Majority Carrier Conduction Mechanical Characteristics:; Weight: 1.9 grams (approximately); High Surge Capacity; Guard-Ring for Stress Protection; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; AEC-Q101 Qualified and PPAP Capable; NRVB P	Transistor Outline, Vertical	MBR10100G	3D model available Symbol and footprint available 3	1 Download Model
	MBR190 PANJIT	1	Power Schottky (IF≧1A) - MBR190 , Standard, 90V, 1A, DO-41	Diodes, Axial Diameter Horizontal Mounting	MBR190	3D model available Symbol and footprint available 3	1 Download Model
	MBR1080FCT PANJIT	1	Power Schottky (IF≧1A) - MBR1080FCT , Standard, 80V, 10A, ITO-220AB	Transistor Outline, Vertical	MBR1080FCT	3D model available Symbol and footprint available 3	1 Download Model
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