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MR2A08AYS35
Everspin Technologies
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1 | NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM | Small Outline Packages | MR2A08AYS35 |
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S71GL032NA0BHW0Z2
Spansion
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1 | Flash Memory and RAM\r\n64/32 Megabit (4/2 M x 16-bit) CMOS 3.0 Volt-only\r\nPage Mode Flash Memory and\r\n32/16/8/4 Megabit (2M/1M/512k/256k x 16-bit) Pseudo Static RAM | BGA | S71GL032NA0BHW0Z2 |
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ATSHA204A-MAHCZ-T
Microchip
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1 | Authentication Chip IC Networking and Communications 8-UDFN (2x3) | Small Outline No-lead | ATSHA204A-MAHCZ-T |
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MB85RC256VPNF-G-JNERE1
FUJITSU
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1 | Memory FRAM 246K (32K x 8) Bit I2C | Small Outline Packages | MB85RC256VPNF-G-JNERE1 |
3
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MB85RC04VPNF-G-JNE1
FUJITSU
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1 | Memory FRAM 4 K (512 × 8) Bit I2C | Small Outline Packages | MB85RC04VPNF-G-JNE1 |
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MB85RC04VPNF-G-JNERE1
FUJITSU
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1 | FRAM FRAM 4Kb (512 x 8) I2C SOIC-8_150mil RoHS | Small Outline Packages | MB85RC04VPNF-G-JNERE1 |
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S27KL0641DABHI020
Infineon
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1 | CYPRESS SEMICONDUCTOR - S27KL0641DABHI020 - DRAM, 64MBIT, 36NS, FBGA-24 | BGA | S27KL0641DABHI020 |
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ATSHA204A-SSHDA-B
Microchip
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1 | CryptoAuthentication 4.5Kb EEPROM Atmel ATSHA204A-SSHDA-B EEPROM Memory Chip, 4kbit, 2 → 5.5 V 8-Pin SOIC | Small Outline Packages | ATSHA204A-SSHDA-B |
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CY15B256Q-SXAT
Infineon
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1 | F-RAM F-RAM Memory Serial | Small Outline Packages | CY15B256Q-SXAT |
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S71KL512SC0BHV000
Infineon
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1 | NOR Flash Nor | BGA | S71KL512SC0BHV000 |
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MR0A08BCYS35
Everspin Technologies
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1 | MRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM | Small Outline Packages | MR0A08BCYS35 |
2
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CY15B102Q-SXE
Infineon
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1 | Cypress Semiconductor, CY15B102Q-SXE | Small Outline Packages | CY15B102Q-SXE |
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47L16T-I/SN
Microchip
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1 | MICROCHIP - 47L16T-I/SN - NVRAM, EERAM, 16 Kbit, 2K x 8bit, I2C, NSOIC | Small Outline Packages | 47L16T-I/SN |
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M30162040054X0ISAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040054X0ISAR |
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M30082040054X0PSAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30082040054X0PSAY |
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M30082040108X0ISAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30082040108X0ISAY |
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M10162040108X0PSAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040108X0PSAY |
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M30162040054X0PWAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040054X0PWAR |
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M10082040054X0ISAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040054X0ISAR |
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M10082040054X0PWAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10082040054X0PWAY |
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M10162040108X0IWAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040108X0IWAY |
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ST25TA02KB-PC6H5
STMicroelectronics
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1 | NFC Forum Type 4 Tag IC with 2-Kbit EEPROM and general purpose digital output | Other | ST25TA02KB-PC6H5 |
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M30082040054X0PWAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30082040054X0PWAY |
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M10162040054X0PSAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0PSAY |
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S27KL0641DABHB020
Infineon
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1 | DRAM Nor | BGA | S27KL0641DABHB020 |
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