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Image Part Number D.S Description Package Category Prices / Stock Model Action
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6116SA15SOG8 Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Small Outline Packages 6116SA15SOG8 1 Download Model
Part Image Part Image 1 Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 100 mW Surface Mount SC-70 Other 2SA1586-GR,LF 1 Download Model
Part Image Part Image 1 Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 200 mW Surface Mount USM Other 2SA1586-Y,LXHF 1 Download Model
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2SA1576U3T106R ROHM Semiconductor
1 Bipolar Transistors - BJT PNP -50V -0.15A 0.2W SOT-323; SC-70; UMT Other 2SA1576U3T106R 1 Download Model
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TPSA156M010S1000 Kyocera AVX
1 Tantalum Capacitors - Solid SMD 10V 15uF 20% 1206 ESR = 1000mOhm Capacitor Moulded Polarised TPSA156M010S1000 1 Download Model
Part Image Part Image 1 Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 100 mW Surface Mount SC-70 Other 2SA1586-Y,LF 1 Download Model
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SA15CA LITTELFUSE
1 ESD Suppressors / TVS Diodes SA15CA Bi-Directional Diodes, Axial Diameter Horizontal Mounting SA15CA 1 Download Model
Part Image Part Image 1 Bipolar (BJT) Transistor PNP 30 V 500 mA 200MHz 100 mW Surface Mount SC-70 Other 2SA1588-GR,LF 1 Download Model
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TXD2SA-1.5V-X Panasonic
1 6,000 V surge withstand voltage, 2 Form C and 2 A high dielectric strength relays Other TXD2SA-1.5V-X 1 Download Model
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TXD2SA-1.5V-Z Panasonic
1 6,000 V surge withstand voltage, 2 Form C and 2 A high dielectric strength relays Other TXD2SA-1.5V-Z 1 Download Model
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DE21XSA150KA3BT02F Murata Electronics
1 Capacitor 15pF ±10% DE2 D=6mm T=5mm F=7.5mm d=0.6mm Other DE21XSA150KA3BT02F 1 Download Model
Part Image Part Image 1 24.4V Clamp 20.9A Ipp Tvs Diode Through Hole DO-15 Diodes, Axial Diameter Horizontal Mounting SA15CA-BP 1 Download Model
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DE2E3SA152MN3AY02F Murata Electronics
1 Safety Capacitors 7.5 1.0mm 8.0mm max Dia 5.0mm max Thick E (JIS) 400Vac(r.m.s.) 1500pF M tol Other DE2E3SA152MN3AY02F 1 Download Model
Part Image Part Image 1 Noise suppression filter, For home appliances (conductive noise countermeasure) Other VFS6045SA151 1 Download Model
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TX2SA-1.5V-TH Panasonic
1 7.5 A inrush current possible, 2 Form C small size relays Other TX2SA-1.5V-TH 1 Download Model
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TX2SA-1.5V-1 Panasonic
1 2,000 Vrms dielectric strength, 2 Form C and 2 A relays Other TX2SA-1.5V-1 1 Download Model
Part Image Part Image 1 243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15 Diodes, Axial Diameter Horizontal Mounting SA150A-BP 1 Download Model
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71256SA15PZGI Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71256SA15PZGI 1 Download Model
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71V124SA15YGI8 Renesas Electronics
1 The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Other 71V124SA15YGI8 1 Download Model
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71V016SA15PHG Renesas Electronics
1 The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Small Outline Packages 71V016SA15PHG 1 Download Model
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71V256SA15YGI Renesas Electronics
1 The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Other 71V256SA15YGI 1 Download Model
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6116SA15SOG Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Small Outline Packages 6116SA15SOG 1 Download Model
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71V124SA15TYGI8 Renesas Electronics
1 The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Other 71V124SA15TYGI8 1 Download Model
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71256SA15TPGI Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Dual-In-Line Packages 71256SA15TPGI 1 Download Model
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TXS2SA-1.5V-X Panasonic
1 High sensitivity, 50 mW operating power, 2 Form C and 1 A relays Other TXS2SA-1.5V-X 1 Download Model
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