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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	6116SA15SOG8 Renesas Electronics	1	The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Small Outline Packages	6116SA15SOG8	3D model not available Symbol and footprint available 2	1 Download Model
	71V016SA15YG Renesas Electronics	1	The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71V016SA15YG	3D model available Symbol and footprint available 3	1 Download Model
	71V256SA15PZG Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Small Outline Packages	71V256SA15PZG	3D model available Symbol and footprint available 3	1 Download Model
	71V3556SA150BGGI Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	71V3556SA150BGGI	3D model available Symbol and footprint available 3	1 Download Model

	2SA1586-Y,LF Toshiba	1	Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 100 mW Surface Mount SC-70	Other	2SA1586-Y,LF	3D model available Symbol and footprint available 3	1 Download Model
	TPSA156M010S1000 Kyocera AVX	1	Tantalum Capacitors - Solid SMD 10V 15uF 20% 1206 ESR = 1000mOhm	Capacitor Moulded Polarised	TPSA156M010S1000	3D model available Symbol and footprint available 3	1 Download Model
	SA15CA LITTELFUSE	1	ESD Suppressors / TVS Diodes SA15CA Bi-Directional	Diodes, Axial Diameter Horizontal Mounting	SA15CA	3D model available Symbol and footprint available 3	1 Download Model
	2SA1588-GR,LF Toshiba	1	Bipolar (BJT) Transistor PNP 30 V 500 mA 200MHz 100 mW Surface Mount SC-70	Other	2SA1588-GR,LF	3D model available Symbol and footprint available 3	1 Download Model
	DE2E3SA152MN3AY02F Murata Electronics	1	Safety Capacitors 7.5 1.0mm 8.0mm max Dia 5.0mm max Thick E (JIS) 400Vac(r.m.s.) 1500pF M tol	Other	DE2E3SA152MN3AY02F	3D model available Symbol and footprint available 3	1 Download Model
	TXD2SA-1.5V-X Panasonic	1	6,000 V surge withstand voltage, 2 Form C and 2 A high dielectric strength relays	Other	TXD2SA-1.5V-X	3D model available Symbol and footprint available 3	1 Download Model
	SA150A-BP MCC	1	243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15	Diodes, Axial Diameter Horizontal Mounting	SA150A-BP	3D model available Symbol and footprint available 3	1 Download Model
	71V124SA15YGI8 Renesas Electronics	1	The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V124SA15YGI8	3D model available Symbol and footprint available 3	1 Download Model
	DE21XSA150KA3BT02F Murata Electronics	1	Capacitor 15pF ±10% DE2 D=6mm T=5mm F=7.5mm d=0.6mm	Other	DE21XSA150KA3BT02F	3D model available Symbol and footprint available 3	1 Download Model
	71256SA15PZGI Renesas Electronics	1	The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71256SA15PZGI	3D model available Symbol and footprint available 3	1 Download Model
	SA15CA-BP MCC	1	24.4V Clamp 20.9A Ipp Tvs Diode Through Hole DO-15	Diodes, Axial Diameter Horizontal Mounting	SA15CA-BP	3D model available Symbol and footprint available 3	1 Download Model

	TXD2SA-1.5V-Z Panasonic	1	6,000 V surge withstand voltage, 2 Form C and 2 A high dielectric strength relays	Other	TXD2SA-1.5V-Z	3D model available Symbol and footprint available 3	1 Download Model
	TX2SA-1.5V-TH Panasonic	1	7.5 A inrush current possible, 2 Form C small size relays	Other	TX2SA-1.5V-TH	3D model available Symbol and footprint available 3	1 Download Model
	TX2SA-1.5V-1 Panasonic	1	2,000 Vrms dielectric strength, 2 Form C and 2 A relays	Other	TX2SA-1.5V-1	3D model available Symbol and footprint available 3	1 Download Model
	71V124SA15TYGI8 Renesas Electronics	1	The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V124SA15TYGI8	3D model available Symbol and footprint available 3	1 Download Model
	VFS6045SA151 TDK	1	Noise suppression filter, For home appliances (conductive noise countermeasure)	Other	VFS6045SA151	3D model available Symbol and footprint available 3	1 Download Model
	71256SA15TPGI Renesas Electronics	1	The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Dual-In-Line Packages	71256SA15TPGI	3D model available Symbol and footprint available 3	1 Download Model
	71V016SA15PHG Renesas Electronics	1	The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Small Outline Packages	71V016SA15PHG	3D model available Symbol and footprint available 3	1 Download Model
	71V256SA15YGI Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V256SA15YGI	3D model available Symbol and footprint available 3	1 Download Model
	6116SA15SOG Renesas Electronics	1	The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Small Outline Packages	6116SA15SOG	3D model not available Symbol and footprint available 2	1 Download Model
	SA15CA-TP MCC	1	500WATTS TVS 5.0 to 170 VOLTS	Diodes, Axial Diameter Horizontal Mounting	SA15CA-TP	3D model available Symbol and footprint available 3	1 Download Model
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