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STM8S208S8T6
STMicroelectronics
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1 | Mainstream Performance line 8-bit MCU with 64 Kbytes Flash, 24 MHz CPU, integrated EEPROM | Quad Flat Packages | STM8S208S8T6 |
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M30042040108X0PSAR
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040108X0PSAR |
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M10162040054X0IWAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040054X0IWAY |
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M30162040108X0ISAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040108X0ISAR |
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MR4A08BCYS35R
Everspin Technologies
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1 | NVRAM MRAM Parallel 16Mbit 3.3V 44-Pin TSOP-II T/R | Small Outline Packages | MR4A08BCYS35R |
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47L16-I/ST
Microchip
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1 | Microchip SRAM, 47L16-I/ST- 16kbit | Small Outline Packages | 47L16-I/ST |
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AT88SC0104CA-SH
Microchip
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1 | EEPROM CryptoMemory, 1Kbit 4Zone, 8SOIC, GRN | Small Outline Packages | AT88SC0104CA-SH |
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MB85RS512TPNF-G-JNERE1
FUJITSU
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1 | F-RAM 512kbit FRAM, SPI, 1.8V 3.6V - SOP8 T&R | Small Outline Packages | MB85RS512TPNF-G-JNERE1 |
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47C16-E/SN
Microchip
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1 | SRAM 16k, 5.0V EERAM EXT | Small Outline Packages | 47C16-E/SN |
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MR256A08BYS35
Everspin Technologies
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1 | NVRAM 256Kb 3.3V 35ns 32Kx8 Parallel MRAM | Small Outline Packages | MR256A08BYS35 |
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47C16-I/ST
Microchip
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1 | SRAM 16k, 5.0V EERAM IND | Small Outline Packages | 47C16-I/ST |
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CY8C20110-LDX2I
Infineon
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1 | CY8C20110-LDX2I, Capacitive Touch Screen Controller Serial-I2C 2-Wire, 16-Pin QFN | Quad Flat No-Lead | CY8C20110-LDX2I |
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AT88SC0104CA-PU
Microchip
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1 | IC EEPROM 1K I2C 4MHZ 8DIP | Dual-In-Line Packages | AT88SC0104CA-PU |
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MR256A08BCMA35
Everspin Technologies
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1 | MRAM 256Kb 3.3V 35ns 32Kx8 Parallel MRAM | BGA | MR256A08BCMA35 |
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S27KS0641DPBHB020
Infineon
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1 | DRAM Chip DDR SDRAM 64Mbit 8Mx8 1.8V Automotive AEC-Q100 24-Pin Fortified BGA Tray | BGA | S27KS0641DPBHB020 |
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ATSHA204A-SSHDA-T
Microchip
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1 | ATSHA204A-SSHDA-T, Peripheral Controller Atmel Crypto EEPROM 8-Pin SOIC | Small Outline Packages | ATSHA204A-SSHDA-T |
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FM33256B-G
Infineon
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1 | Real Time Clock 256Kb F-RAM Processor Companion | Small Outline Packages | FM33256B-G |
3
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M30162040108X0PWAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040108X0PWAR |
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M10162040054X0PSAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0PSAR |
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M30042040054X0PSAY
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040054X0PSAY |
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M10082040054X0PWAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10082040054X0PWAR |
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DS28C50Q+T
Analog Devices
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1 | DeepCover I2C Secure SHA-3 Authenticator with ChipDNA PUF Protection | Small Outline No-lead | DS28C50Q+T |
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W968D6DAGX7I
Winbond
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1 | This is a 256M bit CellularRAM™ compliant products, organized as 16M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. | BGA | W968D6DAGX7I |
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M10162040054X0PWAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040054X0PWAR |
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M30042040108X0ISAY
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040108X0ISAY |
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