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Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Automotive Grade Slow Blow SMD Fuses, 1206 Fuses Chip SF-1206SA200M-2 1 Download Model
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7140SA20PF8 Renesas Electronics
1 The 7140 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a "SLAVE" Dual-Port RAM together with the 7130 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available. Quad Flat Packages 7140SA20PF8 1 Download Model
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MHR0844SA205F70 Murata Electronics
1 Resistance : 2.0MΩ,Tolerance : ±1%,Single use,Rated power : 2.5W, Max. operating voltage : 2.23kVdc Other MHR0844SA205F70 1 Download Model
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6116SA20TDB Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Ceramic Dual-In-Line Packages 6116SA20TDB 1 Download Model
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71421SA20J8 Renesas Electronics
1 The 71421 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a "SLAVE" Dual-Port RAM together with the 71321 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Plastic Leaded Chip Carrier 71421SA20J8 1 Download Model
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71V256SA20PZG Renesas Electronics
1 The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Other 71V256SA20PZG 1 Download Model
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6116SA20TPG Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Dual-In-Line Packages 6116SA20TPG 1 Download Model
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71321SA20TF Renesas Electronics
1 The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta Quad Flat Packages 71321SA20TF 1 Download Model
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71V35761SA200BQGI8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA200BQGI8 1 Download Model
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71V016SA20YG Renesas Electronics
1 The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71V016SA20YG 1 Download Model
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71321SA20TF8 Renesas Electronics
1 The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta Quad Flat Packages 71321SA20TF8 1 Download Model
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71V256SA20PZGI Renesas Electronics
1 The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Other 71V256SA20PZGI 1 Download Model
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7130SA20TF8 Renesas Electronics
1 The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 Quad Flat Packages 7130SA20TF8 1 Download Model
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71256SA20PZG Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71256SA20PZG 1 Download Model
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7133SA20G Renesas Electronics
1 The 7133 high-speed 2K x 16 Dual-Port Static RAMs is designed to be used as a stand-alone 16-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7143 "SLAVE" Dual-Port in 32-bit-or-more word width systems. Low-power (LA) versions offer battery backup data retention capability, with each port typically consuming 200μW for a 2V battery. Military grade product in compliance with MIL-PRF-38535 QML is available. Other 7133SA20G 1 Download Model
Part Image Part Image 1 50 - 6000 MHz, 3 - 5 V Low Loss Voltage Controlled Attenuator Quad Flat No-Lead RFSA2033SB 1 Download Model
Part Image Part Image 1 • Broadband 50MHz to 6000 MHz• 30 dB Attenuation Range• +50 dBm Input IP3• +80 dBm Input IP2• >+30 dBm High 1 dB Compression• 1mA Low Current Consumption• 3.3V Power Supply• Linear in dB Control Characteristic• Internal Temperature Compensation• 5V Version Available - RFSA2013 Quad Flat No-Lead RFSA2023TR7 1 Download Model
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71256SA20TPGI Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Dual-In-Line Packages 71256SA20TPGI 1 Download Model
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7130SA20PF Renesas Electronics
1 The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 Quad Flat Packages 7130SA20PF 1 Download Model
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MHR0309SA206F70 Murata Electronics
1 Resistance : 20.0MΩ,Tolerance : ±1%,Single use,Rated power : 0.5W, Max. operating voltage : 3.16kVdc Other MHR0309SA206F70 1 Download Model
Part Image Part Image 1 Precision Thin Film Chip Resistor Array Superior Moisture Resistivity Other ACASA2002E2002P1AT 1 Download Model
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71V35761SA200BQG8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA200BQG8 1 Download Model
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71321SA20PF Renesas Electronics
1 The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta Quad Flat Packages 71321SA20PF 1 Download Model
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71V016SA20PHG8 Renesas Electronics
1 The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Small Outline Packages 71V016SA20PHG8 1 Download Model
Part Image Part Image 1 Adoption of FBET and MBIT processes; Large current capacitance; Low collector-to-emitter saturation voltage; High-speed switching; High allowable power dissipation Other 2SA2039-TL-E 1 Download Model
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