650.8 Model Download Search Results
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GS66508P
GaN Systems
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1 | 650V, 30A, Enhancement mode GaN Transistor, GaNPX® package, Bottom-side cooled | Other | GS66508P |
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865080340002
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEB055150M016DVCTAB000; SMT V-Chip; 15 µF ± 20%; 16 V(DC); 2000 h; -55°C / +105°C; size DxL 4.0 x 5.5; Max. Iripple 85 mA @100 kHz; LC 3 µA; DF 16 % | Capacitor Al Electrolytic | 865080340002 |
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865080743010
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASED055100M063DVCTBB000; SMT V-Chip; 10 µF ± 20%; 63 V(DC); 2000 h; -55°C / +105°C; size DxL 6.3 x 5.5; Max. Iripple 40 mA @120 Hz; LC 6.3 µA; DF 12 % | Capacitor Al Electrolytic | 865080743010 |
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1776508
Phoenix Contact
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1 | MSTB 2,5/ 2-GF-5,08 - PCB headers, nominal cross section: 2.5 mm2, color: green, nominal current: 12 A, rated voltage (III/2): 320 V, contact surface: Sn, contact connection type: Pin, number of potentials: 2, number of rows: 1, number of positions: 2, number of connections: 2, product range: MSTB 2,5/..-GF, pitch: 5.08 mm, mounting: Wave soldering, pin layout: Linear pinning, solder pin [P]: 3.23 mm, number of solder pins per potential: 1, plug-in system: COMBICON MSTB 2,5, Pin connector pattern | Other | 1776508 |
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865080353014
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEE105331M016DVCTEB000; SMT V-Chip; 330 µF ± 20%; 16 V(DC); 2000 h; -55°C / +105°C; size DxL 8.0 x 10.5; Max. Iripple 550 mA @100 kHz; LC 52.8 µA; DF 16 % | Capacitor Al Electrolytic | 865080353014 |
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5650868-5
TE Connectivity
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1 | Body Features: Primary Product Color Gray | Configuration Features: PCB Mount Orientation Right Angle | Number of Columns 16 | Rows Loaded A, B, C | Number of Rows 3 | Number of Positions 48 | Number of Signal Positions 48 | Contact Features: Contact Mating Area Plating Material Gold Flash over Palladium Nickel | PCB Contact Termination Area Plating Material Tin | Contact Underplating Material Nickel | Contact Base Material Copper Alloy | Contact Mating Area Plating Material Gold | Dimensions: Row-to-Row Sp | Other | 5650868-5 |
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865080645010
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASED077330M050DVCTCB000; SMT V-Chip; 33 µF ± 20%; 50 V(DC); 2000 h; -55°C / +105°C; size DxL 6.3 x 7.7; Max. Iripple 190 mA @100 kHz; LC 16.5 µA; DF 12 % | Capacitor Al Electrolytic | 865080645010 |
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865080140004
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEB055470M6R3DVCTAB000; SMT V-Chip; 47 µF ± 20%; 6.3 V(DC); 2000 h; -55°C / +105°C; size DxL 4.0 x 5.5; Max. Iripple 86 mA @100 kHz; LC 3 µA; DF 24 % | Capacitor Al Electrolytic | 865080140004 |
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865080653015
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEE105680M050DVCTEB000; SMT V-Chip; 68 µF ± 20%; 50 V(DC); 2000 h; -55°C / +105°C; size DxL 8.0 x 10.5; Max. Iripple 320 mA @100 kHz; LC 34 µA; DF 12 % | Capacitor Al Electrolytic | 865080653015 |
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865080443008
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASED055560M025DVCTBB000; SMT V-Chip; 56 µF ± 20%; 25 V(DC); 2000 h; -55°C / +105°C; size DxL 6.3 x 5.5; Max. Iripple 230 mA @100 kHz; LC 14 µA; DF 14 % | Capacitor Al Electrolytic | 865080443008 |
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UJ3D06508TS
onsemi
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1 | Operating temperature: 175?C (max); Easy paralleling; Extremely fast switching not dependent on temperature; No reverse or forward recovery; Enhanced surge current capability, MPS structure; Excellent thermal performance, Ag sintered; 100% UIS tested | Transistor Outline, Vertical | UJ3D06508TS |
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TB006-508-14BE
Same Sky
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1 | 2~24 Poles, Screw Type, Horizontal, 5.08 Pitch, 26~14 (AWG), Terminal Block Connector | Other | TB006-508-14BE |
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865080353015
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEE105471M016DVCTEB000; SMT V-Chip; 470 µF ± 20%; 16 V(DC); 2000 h; -55°C / +105°C; size DxL 8.0 x 10.5; Max. Iripple 590 mA @100 kHz; LC 75.2 µA; DF 16 % | Capacitor Al Electrolytic | 865080353015 |
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650874-5
TE Connectivity
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1 | 120 Position Din Connector Receptacle, Female Sockets Gold Through Hole, Right Angle, -55°C ~ 125°C | Other | 650874-5 |
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865080342004
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEC055270M016DVCTBB000; SMT V-Chip; 27 µF ± 20%; 16 V(DC); 2000 h; -55°C / +105°C; size DxL 5.0 x 5.5; Max. Iripple 170 mA @100 kHz; LC 4.32 µA; DF 16 % | Other | 865080342004 |
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GS66508T-TR
GaN Systems
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1 | 650V, 30A, Enhancement mode GaN Transistor, GaNPX® package, Top-side cooled | Other | GS66508T-TR |
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865080540002
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEB0554R7M035DVCTAB000; SMT V-Chip; 4.7 µF ± 20%; 35 V(DC); 2000 h; -55°C / +105°C; size DxL 4.0 x 5.5; Max. Iripple 85 mA @100 kHz; LC 3 µA; DF 14 % | Capacitor Al Electrolytic | 865080540002 |
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865080540003
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEB0556R8M035DVCTAB000; SMT V-Chip; 6.8 µF ± 20%; 35 V(DC); 2000 h; -55°C / +105°C; size DxL 4.0 x 5.5; Max. Iripple 88 mA @100 kHz; LC 3 µA; DF 14 % | Capacitor Al Electrolytic | 865080540003 |
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865080745011
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASED077220M063DVCTCB000; SMT V-Chip; 22 µF ± 20%; 63 V(DC); 2000 h; -55°C / +105°C; size DxL 6.3 x 7.7; Max. Iripple 58 mA @120 Hz; LC 13.86 µA; DF 12 % | Capacitor Al Electrolytic | 865080745011 |
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865080740007
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEB0552R2M063DVCTAB000; SMT V-Chip; 2.2 µF ± 20%; 63 V(DC); 2000 h; -55°C / +105°C; size DxL 4.0 x 5.5; Max. Iripple 11 mA @120 Hz; LC 3 µA; DF 12 % | Capacitor Al Electrolytic | 865080740007 |
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865080640001
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEB055010M050DVCTAB000; SMT V-Chip; 1 µF ± 20%; 50 V(DC); 2000 h; -55°C / +105°C; size DxL 4.0 x 5.5; Max. Iripple 55 mA @100 kHz; LC 3 µA; DF 12 % | Capacitor Al Electrolytic | 865080640001 |
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865080640003
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEB0553R3M050DVCTAB000; SMT V-Chip; 3.3 µF ± 20%; 50 V(DC); 2000 h; -55°C / +105°C; size DxL 4.0 x 5.5; Max. Iripple 55 mA @100 kHz; LC 3 µA; DF 12 % | Capacitor Al Electrolytic | 865080640003 |
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865080242004
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEC055470M010DVCTBB000; SMT V-Chip; 47 µF ± 20%; 10 V(DC); 2000 h; -55°C / +105°C; size DxL 5.0 x 5.5; Max. Iripple 165 mA @100 kHz; LC 4.7 µA; DF 19 % | Capacitor Al Electrolytic | 865080242004 |
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865080643008
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASED055220M050DVCTBB000; SMT V-Chip; 22 µF ± 20%; 50 V(DC); 2000 h; -55°C / +105°C; size DxL 6.3 x 5.5; Max. Iripple 150 mA @100 kHz; LC 11 µA; DF 12 % | Capacitor Al Electrolytic | 865080643008 |
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GS66508B
GaN Systems
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1 | 650V, 30A, Enhancement mode GaN Transistor, GaNPX® package, Bottom-side cooled | Other | GS66508B |
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![Part Image](["https://gansystems.com/wp-content/uploads/2018/01/GS66508P-gan-transistor.png","https://gansystems.com/wp-content/uploads/2018/01/GS66508P-gan-transistor.png",null])
![Part Image](["https://componentsearchengine.com/Images/3/865080340002.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/865080743010.jpg",null,null])
![Part Image](["https://caas.phoenixcontact.com/caas/v1/stable/media/246778/full/b148?format=jpg","https://caas.phoenixcontact.com/caas/v1/stable/media/246778/full/b148?format=jpg",null])
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![Part Image](["https://componentsearchengine.com/Images/9/865080353015.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/650874-5.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/865080342004.jpg",null,null])
![Part Image](["https://gansystems.com/wp-content/uploads/2020/03/GS66508T-v07.png","https://gansystems.com/wp-content/uploads/2020/03/GS66508T-v07.png",null])
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![Part Image](["https://gansystems.com/wp-content/uploads/2020/03/GS66508B-v06.png","https://gansystems.com/wp-content/uploads/2020/03/GS66508B-v06.png",null])
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