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70T3399S133BC8
Renesas Electronics
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1 | The 70T3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3399S133BC8 |
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70T3539MS133BC8
Renesas Electronics
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1 | The 70T3539M is a high-speed 512K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T353M can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3539MS133BC8 |
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70V3569S4BF
Renesas Electronics
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1 | The 70V3569 is a high-speed 16K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3569 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3569S4BF |
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70T3519S200BC8
Renesas Electronics
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1 | The 70T3519 is a high-speed 256K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3519 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3519S200BC8 |
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70T3509MS133BPGI
Renesas Electronics
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1 | The 70T3509M is a high-speed 1024K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3509M can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3509MS133BPGI |
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OPB360N51
TT Electronics
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1 | SENSOR OPT SLOT PHOTOTRANS MODUL | Other | OPB360N51 |
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TBPDANS005PGUCV
Honeywell
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1 | Board Mount Pressure Sensors DIP Sngl Ax Barbless Silicon Gel Opt 5psi | Other | TBPDANS005PGUCV |
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ISL61862EVAL1Z
Renesas Electronics
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1 | Power Management IC Development Tools JAZZ QD-OUTPUT CNTRL 5X5 TQFN TRIM OPT C | Small Outline No-lead | ISL61862EVAL1Z |
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L-31ROPT1C
Paralight
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1 | 3.0mm Phototransistor. | Other | L-31ROPT1C |
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OSOPTA2002FT1
Vishay
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1 | 20k Ohm ±1% 100mW Power Per Element Isolated 10 Resistor Network/Array ±25ppm/°C 20-SSOP (0.154", 3.90mm Width) | Small Outline Packages | OSOPTA2002FT1 |
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OPT101P
Texas Instruments
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1 | Texas Instruments OPT101P Infrared Photodetector Amplifier, Through Hole PDIP Package | Dual-In-Line Packages | OPT101P |
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OPT4001DTSR
Texas Instruments
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1 | Ambient Light Sensors High-speed high-precision digital ambient light sensor (ALS) 8-SOT-5X3 -40 to 85 | Other | OPT4001DTSR |
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OPT101PG4
Texas Instruments
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1 | Light To Frequency & Light To Voltage Transimpedance Amp | Dual-In-Line Packages | OPT101PG4 |
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OPTAN-255J-BL
OPTAN
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1 | Ultraviolet (UV) Emitter 255nm (250nm ~ 260nm) 10V (Max) 100mA 15° TO-205AD, TO-39-3 Metal Can | Other | OPTAN-255J-BL |
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RV-3029-C2-32.768KHZ-OPTION-A-TB-QC
Micro Crystal AG
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1 | Real-Time Clock Module | Other | RV-3029-C2-32.768KHZ-OPTION-A-TB-QC |
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RV-3129-C3 32.768kHz OPTION B TB QA
Micro Crystal AG
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1 | RV-3129-C3 10-Terminal Ceramic Leadless Chip Carrier [LCC10] | Other | RV-3129-C3 32.768kHz OPTION B TB QA |
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RV-3149-C3 32.768kHz OPTION B TB QA
Micro Crystal AG
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1 | RV-3149-C3 10-Terminal Ceramic Leadless Chip Carrier | Other | RV-3149-C3 32.768kHz OPTION B TB QA |
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RV-3049-C3-TB-QA-Opt. A
Micro Crystal AG
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1 | RV-3049-C3, Real-Time Clock, SPI Bus, A Stability, Automotive AEC-Q200, 8ppm @ -40 to +125C (SMD 3.7 x 2.5 x 0.9) | Other | RV-3049-C3-TB-QA-Opt. A |
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RV-3049-C2-TA-QC-Opt. A
Micro Crystal AG
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1 | RV-3049-C2, Real-Time Clock, SPI Bus, A Stability, 6ppm @ -40 to +85C (SMD 5.0 x 3.2 x 1.2) | Other | RV-3049-C2-TA-QC-Opt. A |
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70V3319S166BF
Renesas Electronics
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1 | The 70V3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3319S166BF |
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70T3339S166BC
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S166BC |
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70V3579S5BFI
Renesas Electronics
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1 | The 70V3579 is a high-speed 32K × 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3579 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3579S5BFI |
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70T3319S133BCI
Renesas Electronics
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1 | The 70T3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3319S133BCI |
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70T3589S166BF8
Renesas Electronics
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1 | The 70T3589 is a high-speed 64K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3589 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3589S166BF8 |
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70T3319S133BC
Renesas Electronics
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1 | The 70T3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3319S133BC |
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