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V24C28T100BG
VICOR
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1 | Isolated DC/DC Converters T18 36 24 28.0V3.6A | Other | V24C28T100BG |
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V28C15T100BG2
VICOR
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1 | Isolated DC/DC Converters T 9/36/28 15v/ 6.67A | Other | V28C15T100BG2 |
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V110C24T100BG
VICOR
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1 | DC DC CONVERTER 24V 100W | Other | V110C24T100BG |
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71V3556SA100BGGI8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA100BGGI8 |
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71T75802S100BGGI
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | BGA | 71T75802S100BGGI |
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71V65803S100BGGI8
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V65803S100BGGI8 |
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71T75602S100BGGI8
Renesas Electronics
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1 | The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers. | BGA | 71T75602S100BGGI8 |
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RF4G100BG
ROHM Semiconductor
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1 | Nch 40V 10A, HUML2020L8, Power MOSFET | Other | RF4G100BG |
3
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R5F100BGANA#60
Renesas Electronics
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1 | The RL78/G13 microcontrollers balance the industry's lowest level of consumption current (CPU: 66 μA/MHz, standby (STOP): 230 nA) and a high performance of 43.2 DMIPS (32 MHz). They have an on-chip oscillator, data flash, A/D converter, and more. Built-in safety features (function that detects illegal operation of hardware) enable support for the household appliance safety standard (IEC/UL 60730). These microcontrollers can be used in a wide variety of applications from home and consumer appliances to indus | Quad Flat No-Lead | R5F100BGANA#60 |
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71V65603S100BG
Renesas Electronics
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1 | The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V65603S100BG |
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71V2556SA100BGI8
Renesas Electronics
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1 | The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V2556SA100BGI8 |
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RS6G100BGTB1
ROHM Semiconductor
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1 | N-Channel 40 V 100A (Tc) 3W (Ta), 59W (Tc) Surface Mount 8-HSOP | Other | RS6G100BGTB1 |
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71V65803S100BGG
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V65803S100BGG |
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V24C8E100BG3
VICOR
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1 | Isolated DC/DC Converters E 18/36/24 8v/ 12.5A | Other | V24C8E100BG3 |
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VS-100BGQ100HN4
Vishay
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1 | Schottky Diodes & Rectifiers HIGH PERF SCHOTTKY RECT 100A | Other | VS-100BGQ100HN4 |
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V24C8H100BG3
VICOR
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1 | Isolated DC/DC Converters - Through Hole H 18/36/24 8v/ 12.5A | Other | V24C8H100BG3 |
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V28C12T100BG
VICOR
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1 | Isolated DC/DC Converters T 9/36/28 12v/ 8.33A | Other | V28C12T100BG |
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V72C5M100BG
VICOR
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1 | Isolated DC/DC Converters - Through Hole Watts- 100 Vin 72 Vout 5 Grade - M | Other | V72C5M100BG |
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71V3556SA100BGG
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA100BGG |
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71T75802S100BGI8
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | BGA | 71T75802S100BGI8 |
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71V2556SA100BGI
Renesas Electronics
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1 | The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V2556SA100BGI |
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71V3556SA100BGI
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA100BGI |
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71V2556SA100BG8
Renesas Electronics
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1 | The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V2556SA100BG8 |
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R5F100BGGNA#00
Renesas Electronics
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1 | The RL78/G13 microcontrollers balance the industry's lowest level of consumption current (CPU: 66 μA/MHz, standby (STOP): 230 nA) and a high performance of 43.2 DMIPS (32 MHz). They have an on-chip oscillator, data flash, A/D converter, and more. Built-in safety features (function that detects illegal operation of hardware) enable support for the household appliance safety standard (IEC/UL 60730). These microcontrollers can be used in a wide variety of applications from home and consumer appliances to indus | Quad Flat No-Lead | R5F100BGGNA#00 |
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70V5388S100BG
Renesas Electronics
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1 | The 70V5388 is a high-speed 64Kx18 bit synchronous FourPort RAM that allows simultaneous access of any address from all four ports and is optimized for applications having unidirectional or bi-directional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. It provides a wide range of functions specially designed to facilitate system operations. | BGA | 70V5388S100BG |
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