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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Reed Relays 1 Form A 5 V Molded DIP w/diode Other DIP05-1A72-11D 1 Download Model
Part Image Part Image 1 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator Other SIT9025AA-72-18EB25.000000 1 Download Model
Part Image Part Image 1 Reed Relays 1 Form A, SPST-NO 12V Molded DIP Other DIP24-1A72-12L 1 Download Model
Part Image Part Image 1 Reed Relays 1 Form A, SPST-NO 12V DIP w/Diode 4.25VDC Switching Voltage 200VAC, 200VDC - Max Coil Current 12 mA,16.8 VDC 3.6 VDC,-20°C ~ 70°C Other DIP24-1A72-12D 1 Download Model
Part Image Part Image 1 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator Other SIT8944BA-72-18EA25.000000 1 Download Model
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DIP12-1A72-12L STANDEXMEDER
1 Reed Relays 1 Form A, SPST-NO 12V Molded DIP Other DIP12-1A72-12L 1 Download Model
Part Image Part Image 1 Reed Relays 1 Form A 5 V Molded DIP Other DIP05-1A72-12L 1 Download Model
Part Image Part Image 1 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator Other SIT8944BA-72-18SA25.000000 1 Download Model
Part Image Part Image 1 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator Other SIT9025AA-72-18EA25.000000 1 Download Model
Part Image Part Image 1 Automotive AEC-Q100 Oscillator Other SIT8924BA-72-18E-27.000000 1 Download Model
Part Image Part Image 1 High Temperature Oscillator, QFN_2016_4pins Other SIT8918BA-72-18S-81.360000 1 Download Model
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R1QBA7218ABB-20IB1 Renesas Electronics
1 The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low BGA R1QBA7218ABB-20IB1 1 Download Model
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R1Q4A7218ABB-33IB1 Renesas Electronics
1 The R1Q4A7236 is a 2, 097, 152-word by 36-bit and the R1Q4A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low BGA R1Q4A7218ABB-33IB1 1 Download Model
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R1QEA7218ABB-19IB1 Renesas Electronics
1 The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low BGA R1QEA7218ABB-19IB1 1 Download Model
Part Image Part Image 1 Standard Frequency, High Temperature Oscillator, QFN_2016_4pins Other SIT1618BA-72-18N-25.000000 1 Download Model
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DA7217-00U32 Renesas Electronics
1 The DA7217 is a high-performance, low power audio codec optimized for use in headsets or wearable devices. It has differential headphone outputs for use inside headset devices, offering excellent left to right channel separation and common mode noise rejection. DA7217 also has a stereo DAC to headphone output path and ultra-low power operating modes to support always-on audio detect applications.DA7217 contains two analog microphone input paths, or up to four digital microphone input paths, or a combination Other DA7217-00U32 1 Download Model
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DA7211-01UA2 Renesas Electronics
1 The DA7211 is a high-definition audio codec in a 3mm x 3mm footprint with an integrated true-ground (True-GND) capless headphone driver suitable for a variety of low power, digital portable audio products.Featuring a high efficiency but powerful 40mW/channel headphone amplifier the device may be operated from a single 1.8V supply to simplify interfacing to digital processors.BenefitstHigh-performance audio codec with integrated PLLtTrue-GND capless Class G 40mW headphone driver with integrated charge pumptF BGA DA7211-01UA2 1 Download Model
Part Image Part Image 1 Automotive AEC-Q100 Oscillator Other SIT8924AA-72-18N-40.000000 1 Download Model
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R1QBA7218ABG-20IA0 Renesas Electronics
1 Support is limited to customers who have already adopted these products.DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read BGA R1QBA7218ABG-20IA0 1 Download Model
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R1QBA7218ABG-22IA0 Renesas Electronics
1 Support is limited to customers who have already adopted these products.DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read BGA R1QBA7218ABG-22IA0 1 Download Model
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R1QBA7218ABG-22IB0 Renesas Electronics
1 Support is limited to customers who have already adopted these products.DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read BGA R1QBA7218ABG-22IB0 1 Download Model
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HA7210IP Renesas Electronics
1 Programmable Oscillators Dual-In-Line Packages HA7210IP 1 Download Model
Part Image Part Image 1 High Temperature Oscillator, QFN_2016_4pins Other SIT8918BA-72-18E-25.000000 1 Download Model
Part Image Part Image 1 Low Power, Standard Frequency Oscillator, QFN_2016_4pins Other SIT1602BIA72-18E-25.000000 1 Download Model
Part Image Part Image 1 Automotive AEC-Q100 Oscillator Other SIT8924BA-72-18E-50.000000 1 Download Model
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