EPC21 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	EPC2111 Efficient Power Conversion	1	Enhancement-Mode GaN Power Transistor Half Bridge	Other	EPC2111	3D model available Symbol and footprint available 3	1 Download Model
	EPC2103 Efficient Power Conversion	1	GAN TRANS SYMMETRICAL HALF BRIDG Enhancement-Mode GaN Power Transistor Half-Bridge	Other	EPC2103	3D model available Symbol and footprint available 3	1 Download Model
	EPC2108 EPC	1	GANFET 3 N-CH 60V/100V 9BGA	Other	EPC2108	3D model available Symbol and footprint available 3	1 Download Model
	EPC2152ENGRT EPC	1	IC GANFET HALFBRIDG/DRIVER 12LGA EPC2152x – 70 V, 12.5 A ePower Stage	Other	EPC2152ENGRT	3D model available Symbol and footprint available 3	1 Download Model

	EPC2112ENGRT EPC	1	200 V GAN IC FET DRIVER	Other	EPC2112ENGRT	3D model available Symbol and footprint available 3	1 Download Model
	EPC2110ENGR EPC	1	EPC2110 – Dual Common-Source Enhancement-Mode GaN Power Transistor	Other	EPC2110ENGR	3D model available Symbol and footprint available 3	1 Download Model
	EPC2106 EPC	1	GANFET TRANS SYM 100V BUMPED DIE	Other	EPC2106	3D model available Symbol and footprint available 3	1 Download Model
	EPC2152 EPC	1	Synchronous Buck Converter	Other	EPC2152	3D model available Symbol and footprint available 3	1 Download Model
	EPC21701 Efficient Power Conversion	1	Laser Driver IC 1 Channel 80V 15 A Peak.	Other	EPC21701	3D model available Symbol and footprint available 3	1 Download Model
	EPC2104 EPC	1	GAN TRANS SYMMETRICAL HALF BRIDG	Other	EPC2104	3D model available Symbol and footprint available 3	1 Download Model
	EPC2110 Efficient Power Conversion	1	Power Field-Effect Transistor, 3.4A I(D), 120V, 0.11ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-9		EPC2110	3D model not available Symbol and footprint not available 0	0 Build or Request
	EPC2107 Efficient Power Conversion	1	Power Field-Effect Transistor,		EPC2107	3D model not available Symbol and footprint not available 0	0 Build or Request
	EPC2105ENGR Efficient Power Conversion	1	Power Field-Effect Transistor, 9.5A I(D), 80V, 0.0145ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-75		EPC2105ENGR	3D model not available Symbol and footprint not available 0	0 Build or Request
	EPC2100ENGR Efficient Power Conversion	1	Power Field-Effect Transistor, 9.5A I(D), 30V, 0.008ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-75		EPC2100ENGR	3D model not available Symbol and footprint not available 0	0 Build or Request
	EPC2102ENGR Efficient Power Conversion	1	Power Field-Effect Transistor, 23A I(D), 60V, 0.0044ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-75		EPC2102ENGR	3D model not available Symbol and footprint not available 0	0 Build or Request

	EPC2103ENGR Efficient Power Conversion	1	Power Field-Effect Transistor, 23A I(D), 80V, 0.0055ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-75		EPC2103ENGR	3D model not available Symbol and footprint not available 0	0 Build or Request
	EPC2106ENGR Efficient Power Conversion	1	Power Field-Effect Transistor		EPC2106ENGR	3D model not available Symbol and footprint not available 0	0 Build or Request
	EPC2104ENGR Efficient Power Conversion	1	Power Field-Effect Transistor, 23A I(D), 100V, 0.0063ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-75		EPC2104ENGR	3D model not available Symbol and footprint not available 0	0 Build or Request
	EPC21601 Efficient Power Conversion	1	Interface Circuit, DIE-6		EPC21601	3D model not available Symbol and footprint not available 0	0 Build or Request
	EPC2108ENGR Efficient Power Conversion	1	Power Field-Effect Transistor, 1.7A I(D), 60V, 0.19ohm, 3-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 1.35 X 1.35 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-9		EPC2108ENGR	3D model not available Symbol and footprint not available 0	0 Build or Request
	EPC2115ENGRT Efficient Power Conversion	1	Power Field-Effect Transistor, 5A I(D), 150V, 0.088ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-10		EPC2115ENGRT	3D model not available Symbol and footprint not available 0	0 Build or Request
	EPC2107ENGR Efficient Power Conversion	1	Power Field-Effect Transistor, 1.7A I(D), 100V, 0.32ohm, 3-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 1.35 X 1.35 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-9		EPC2107ENGR	3D model not available Symbol and footprint not available 0	0 Build or Request
	EPC2110ENGR Efficient Power Conversion	1	Power Field-Effect Transistor		EPC2110ENGR	3D model not available Symbol and footprint not available 0	0 Build or Request
	EPC2102 Efficient Power Conversion	1	Power Field-Effect Transistor, 23A I(D), 60V, 0.0044ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-75		EPC2102	3D model not available Symbol and footprint not available 0	0 Build or Request
	EPC2152ENGRT Efficient Power Conversion	1	Switching Regulator, 15A, 3000kHz Switching Freq-Max, LGA-12		EPC2152ENGRT	3D model not available Symbol and footprint not available 0	0 Build or Request
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