FDC642P Model Download Search Results
Showing 11 of 11 results
Price & Stock Powered by 
Findchips
Findchips
Filter by Manufacturer
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
|---|
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDC642P
onsemi
|
1 | Low gate charge (11nC typical). ; Fast switching speed. ; Termination is Lead-free and RoHS Compliant ; High performance trench technology for extremely low rDS(ON). ; Max rDS(ON) = 65mΩ at VGS = -4.5 V, ID = -4.0A ; Max rDS(ON) = 100mΩ at VGS = -2.5 V, ID = -3.2A ; SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick) | SOT23 (6-Pin) | FDC642P |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDC642P
Fairchild Semiconductor Corporation
|
1 | Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC642P |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDC642P-F085PBK
onsemi
|
1 | Fast switching speed; Qualified to AEC Q101; Typ rDS(on) = 75.3mΩ at VGS = –2.5V, ID = –3.2A; Typ rDS(on) = 52.5mΩ at VGS = –4.5V, ID = –4A; Low gate charge(6.9nC typical) ; RoHS compliant; High performance trench technology for extremely low rDS(on); SuperSOT™–package:small footprint(72% smaller than standard SO–8);low profile(1mm thick). | SOT23 (6-Pin) | FDC642P-F085PBK |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDC642P-F085P
onsemi
|
1 | Fast switching speed; Qualified to AEC Q101; Typ rDS(on) = 75.3mΩ at VGS = –2.5V, ID = –3.2A; Typ rDS(on) = 52.5mΩ at VGS = –4.5V, ID = –4A; Low gate charge(6.9nC typical) ; RoHS compliant; High performance trench technology for extremely low rDS(on); SuperSOT™–package:small footprint(72% smaller than standard SO–8);low profile(1mm thick). | SOT23 (6-Pin) | FDC642P-F085P |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDC642P_F085
onsemi
|
1 | -20V, -4A, 65mΩ, SSOT-6 P-Channel PowerTrench®, SSOT 6L, 15000-TAPE REEL | FDC642P_F085 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDC642P_F085
Fairchild Semiconductor Corporation
|
1 | Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SUPERSOT-6 | FDC642P_F085 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDC642P-F085
onsemi
|
1 | P-Channel PowerTrench® MOSFET, -20V, -4A, 100mΩ, SSOT 6L, 3000-REEL, Automotive Qualified | FDC642P-F085 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDC642P_NL
Fairchild Semiconductor Corporation
|
1 | Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC642P_NL |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDC642PD87Z
Fairchild Semiconductor Corporation
|
1 | Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC642PD87Z |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDC642P_NF073
Fairchild Semiconductor Corporation
|
1 | Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC642P_NF073 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDC642P-F095
Fairchild Semiconductor Corporation
|
1 | Power Field-Effect Transistor, 4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | FDC642P-F095 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_6.jpg"])
Can't find what you're looking for?
Request this part