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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDD1600N10ALZ
onsemi
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1 | RDS(on) = 124mΩ ( Typ.)@ VGS = 10V, ID = 3.5A; RDS(on) = 175mΩ ( Typ.)@ VGS = 5.0V, ID = 2.1A; 100% Avalanche Tested; Low Gate Charge ( Typ.2.78nC); Fast Switching; Low Crss ( Typ. 2.04pF); Improved dv/dt Capability; RoHS Compliant | Other | FDD1600N10ALZ |
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FDD1600N10ALZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.8A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | FDD1600N10ALZ |
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FDD1600N10ALZD
onsemi
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1 | Last Shipments - N-Channel UltraFET Trench MOSFET, 75V, 50A, 13mΩ | Other | FDD1600N10ALZD |
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FDD1600N10ALZD
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.8A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AD | FDD1600N10ALZD |
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