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Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 RDS(on) = 124mΩ ( Typ.)@ VGS = 10V, ID = 3.5A; RDS(on) = 175mΩ ( Typ.)@ VGS = 5.0V, ID = 2.1A; 100% Avalanche Tested; Low Gate Charge ( Typ.2.78nC); Fast Switching; Low Crss ( Typ. 2.04pF); Improved dv/dt Capability; RoHS Compliant Other FDD1600N10ALZ 1 Download Model
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FDD1600N10ALZ Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 6.8A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA FDD1600N10ALZ 0 Build or Request
Part Image Part Image 1 Last Shipments - N-Channel UltraFET Trench MOSFET, 75V, 50A, 13mΩ Other FDD1600N10ALZD 1 Download Model
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FDD1600N10ALZD Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 6.8A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AD FDD1600N10ALZD 0 Build or Request
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