FDMS86550 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDMS86550 onsemi	1	Advanced Package and Silicon combination for low rDS(on) and high efficiency ; RoHS Compliant ; Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A ; 100% UIL tested ; MSL1 robust package design ; Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A	Other	FDMS86550	3D model available Symbol and footprint available 3	1 Download Model
	FDMS86550 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 32A I(D), 60V, 0.00165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA		FDMS86550	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS86550ET60 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor		FDMS86550ET60	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS86550ET60 onsemi	1	Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A ; RoHS Compliant ; Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A ; MSL1 robust package design ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Extended TJ rating to 175°C; 100% UIL tested		FDMS86550ET60	3D model available Symbol and footprint not available 1	1 Download Model

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