FDS8958A Model Download Search Results
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FDS8958A
onsemi
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1 | High power and handling capability in a widely usedsurface mount package ; Fast switching speed ; Q1: N-Channel 7.0 A, 30 V RDS(ON) = 28 mΩ @ VGS = 10 V RDS(ON) = 40 mΩ @ VGS = 4.5 V ; Q2: P-Channel -5 A,-30 V RDS(ON) = 52 mΩ @ VGS = -10 V RDS(ON) = 80 mΩ @ VGS = -4.5 V | Small Outline Packages | FDS8958A |
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FDS8958A
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS8958A |
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FDS8958A
Rochester Electronics LLC
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1 | 7A, 30V, 0.028ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8, 8 PIN | FDS8958A |
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FDS8958A-F085
onsemi
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1 | Qualified to AEC Q101; Q1: N-Channel 7.0 A, 30 V RDS(ON) = 28 mΩ @ VGS = 10 V RDS(ON) = 40 mΩ @ VGS = 4.5 V ; Q2: P-Channel 5 A, -30 V RDS(ON) = 52 mΩ @ VGS = -10 V RDS(ON) = 80 mΩ @ VGS = -4.5 V ; RoHS compliant; Fast switching speed; High power and handling capability in a widelyused surface mount package | Small Outline Packages | FDS8958A-F085 |
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FDS8958A_F085
onsemi
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1 | Fairchild FDS8958A_F085 Dual N/P-channel MOSFET Transistor, 8-Pin SOIC | Small Outline Packages | FDS8958A_F085 |
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FDS8958A-SBND001A
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET | FDS8958A-SBND001A |
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FDS8958A_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS8958A_NL |
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FDS8958A_NF073
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS8958A_NF073 |
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FDS8958A-SB5EO18A
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET | FDS8958A-SB5EO18A |
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FDS8958AD84Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS8958AD84Z |
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FDS8958AF011
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS8958AF011 |
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FDS8958AL86Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS8958AL86Z |
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FDS8958A_F085
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS8958A_F085 |
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FDS8958AL99Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS8958AL99Z |
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FDS8958AS62Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS8958AS62Z |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_8.jpg"])
![Part Image](["https://componentsearchengine.com/Images/9/FDS8958A_F085.jpg",null,null])
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