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HS1-1825ARH-Q
Renesas Electronics
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1 | The radiation hardened HS-1825ARH, HS-1825AEH pulse width modulator is designed to be used in high-frequency switched-mode power supplies and can be used in either current-mode or voltage-mode. It is well suited for single-ended boost converter applications. Device features include a precision voltage reference, low power start-up circuit, high-frequency oscillator, wide-band error amplifier and fast current-limit comparator. The use of proprietary process capabilities and unique design techniques results i | Dual-In-Line Packages | HS1-1825ARH-Q |
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HS1-139EH-Q
Renesas Electronics
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1 | The Radiation Hardened HS-139RH, HS-139EH consists of four independent single or dual supply voltage comparators on a single monolithic substrate. The common mode input voltage range includes ground, even when operated from a single supply and the low supply current makes these comparators suitable for low power applications. These types were designed to directly interface with TTL and CMOS. The HS-139RH, HS-139EH are fabricated on our dielectrically isolated Rad Hard Silicon Gate (RSG) process, which provi | Dual-In-Line Packages | HS1-139EH-Q |
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HS1-1840ARH-Q
Renesas Electronics
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1 | The HS-1840ARH, HS-1840AEH, HS-1840BRH and HS-1840BEH are radiation hardened, monolithic 16 channel multiplexers constructed with the Intersil Rad-Hard Silicon Gate, bonded wafer, Dielectric Isolation process. They are designed to provide a high input impedance to the analog source if device power fails (open), or the analog signal voltage inadvertently exceeds the supply by up to ±35V, regardless of whether the device is powered on or off. Excellent for use in redundant applications, since the secondary de | Ceramic Dual-In-Line Packages | HS1-1840ARH-Q |
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HS1-1840ARH-T
Renesas Electronics
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1 | The HS-1840ARH, HS-1840AEH, HS-1840BRH and HS-1840BEH are radiation hardened, monolithic 16 channel multiplexers constructed with the Intersil Rad-Hard Silicon Gate, bonded wafer, Dielectric Isolation process. They are designed to provide a high input impedance to the analog source if device power fails (open), or the analog signal voltage inadvertently exceeds the supply by up to ±35V, regardless of whether the device is powered on or off. Excellent for use in redundant applications, since the secondary de | Ceramic Dual-In-Line Packages | HS1-1840ARH-T |
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HS1-139RH-Q
Renesas Electronics
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1 | The Radiation Hardened HS-139RH, HS-139EH consists of four independent single or dual supply voltage comparators on a single monolithic substrate. The common mode input voltage range includes ground, even when operated from a single supply and the low supply current makes these comparators suitable for low power applications. These types were designed to directly interface with TTL and CMOS. The HS-139RH, HS-139EH are fabricated on our dielectrically isolated Rad Hard Silicon Gate (RSG) process, which provi | Dual-In-Line Packages | HS1-139RH-Q |
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HS1-1840BEH-Q
Renesas Electronics
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1 | The HS-1840ARH, HS-1840AEH, HS-1840BRH and HS-1840BEH are radiation hardened, monolithic 16 channel multiplexers constructed with the Intersil Rad-Hard Silicon Gate, bonded wafer, Dielectric Isolation process. They are designed to provide a high input impedance to the analog source if device power fails (open), or the analog signal voltage inadvertently exceeds the supply by up to ±35V, regardless of whether the device is powered on or off. Excellent for use in redundant applications, since the secondary de | Ceramic Dual-In-Line Packages | HS1-1840BEH-Q |
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HS1-1825ARH/PROTO
Renesas Electronics
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1 | The radiation hardened HS-1825ARH, HS-1825AEH pulse width modulator is designed to be used in high-frequency switched-mode power supplies and can be used in either current-mode or voltage-mode. It is well suited for single-ended boost converter applications. Device features include a precision voltage reference, low power start-up circuit, high-frequency oscillator, wide-band error amplifier and fast current-limit comparator. The use of proprietary process capabilities and unique design techniques results i | Dual-In-Line Packages | HS1-1825ARH/PROTO |
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HS1-1840BRH-Q
Renesas Electronics
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1 | The HS-1840ARH, HS-1840AEH, HS-1840BRH and HS-1840BEH are radiation hardened, monolithic 16 channel multiplexers constructed with the Intersil Rad-Hard Silicon Gate, bonded wafer, Dielectric Isolation process. They are designed to provide a high input impedance to the analog source if device power fails (open), or the analog signal voltage inadvertently exceeds the supply by up to ±35V, regardless of whether the device is powered on or off. Excellent for use in redundant applications, since the secondary de | Ceramic Dual-In-Line Packages | HS1-1840BRH-Q |
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HS1-1840BRH-8
Renesas Electronics
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1 | The HS-1840ARH, HS-1840AEH, HS-1840BRH and HS-1840BEH are radiation hardened, monolithic 16 channel multiplexers constructed with the Intersil Rad-Hard Silicon Gate, bonded wafer, Dielectric Isolation process. They are designed to provide a high input impedance to the analog source if device power fails (open), or the analog signal voltage inadvertently exceeds the supply by up to ±35V, regardless of whether the device is powered on or off. Excellent for use in redundant applications, since the secondary de | Ceramic Dual-In-Line Packages | HS1-1840BRH-8 |
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HS1-1840ARH-8
Renesas Electronics
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1 | The HS-1840ARH, HS-1840AEH, HS-1840BRH and HS-1840BEH are radiation hardened, monolithic 16 channel multiplexers constructed with the Intersil Rad-Hard Silicon Gate, bonded wafer, Dielectric Isolation process. They are designed to provide a high input impedance to the analog source if device power fails (open), or the analog signal voltage inadvertently exceeds the supply by up to ±35V, regardless of whether the device is powered on or off. Excellent for use in redundant applications, since the secondary de | Ceramic Dual-In-Line Packages | HS1-1840ARH-8 |
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HS1-1840BRH/PROTO
Renesas Electronics
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1 | The HS-1840ARH, HS-1840AEH, HS-1840BRH and HS-1840BEH are radiation hardened, monolithic 16 channel multiplexers constructed with the Intersil Rad-Hard Silicon Gate, bonded wafer, Dielectric Isolation process. They are designed to provide a high input impedance to the analog source if device power fails (open), or the analog signal voltage inadvertently exceeds the supply by up to ±35V, regardless of whether the device is powered on or off. Excellent for use in redundant applications, since the secondary de | Ceramic Dual-In-Line Packages | HS1-1840BRH/PROTO |
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HS1-139RH/PROTO
Renesas Electronics
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1 | The Radiation Hardened HS-139RH, HS-139EH consists of four independent single or dual supply voltage comparators on a single monolithic substrate. The common mode input voltage range includes ground, even when operated from a single supply and the low supply current makes these comparators suitable for low power applications. These types were designed to directly interface with TTL and CMOS. The HS-139RH, HS-139EH are fabricated on our dielectrically isolated Rad Hard Silicon Gate (RSG) process, which provi | Dual-In-Line Packages | HS1-139RH/PROTO |
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HS1-1825ARH-8
Renesas Electronics
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1 | The radiation hardened HS-1825ARH, HS-1825AEH pulse width modulator is designed to be used in high-frequency switched-mode power supplies and can be used in either current-mode or voltage-mode. It is well suited for single-ended boost converter applications. Device features include a precision voltage reference, low power start-up circuit, high-frequency oscillator, wide-band error amplifier and fast current-limit comparator. The use of proprietary process capabilities and unique design techniques results i | Dual-In-Line Packages | HS1-1825ARH-8 |
3
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HS1-1825AEH-Q
Renesas Electronics
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1 | The radiation hardened HS-1825ARH, HS-1825AEH pulse width modulator is designed to be used in high-frequency switched-mode power supplies and can be used in either current-mode or voltage-mode. It is well suited for single-ended boost converter applications. Device features include a precision voltage reference, low power start-up circuit, high-frequency oscillator, wide-band error amplifier and fast current-limit comparator. The use of proprietary process capabilities and unique design techniques results i | Dual-In-Line Packages | HS1-1825AEH-Q |
3
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HS1-1840AEH-Q
Renesas Electronics
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1 | The HS-1840ARH, HS-1840AEH, HS-1840BRH and HS-1840BEH are radiation hardened, monolithic 16 channel multiplexers constructed with the Intersil Rad-Hard Silicon Gate, bonded wafer, Dielectric Isolation process. They are designed to provide a high input impedance to the analog source if device power fails (open), or the analog signal voltage inadvertently exceeds the supply by up to ±35V, regardless of whether the device is powered on or off. Excellent for use in redundant applications, since the secondary de | Dual-In-Line Packages | HS1-1840AEH-Q |
3
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HS1-1840ARH/PROTO
Renesas Electronics
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1 | The HS-1840ARH, HS-1840AEH, HS-1840BRH and HS-1840BEH are radiation hardened, monolithic 16 channel multiplexers constructed with the Intersil Rad-Hard Silicon Gate, bonded wafer, Dielectric Isolation process. They are designed to provide a high input impedance to the analog source if device power fails (open), or the analog signal voltage inadvertently exceeds the supply by up to ±35V, regardless of whether the device is powered on or off. Excellent for use in redundant applications, since the secondary de | Dual-In-Line Packages | HS1-1840ARH/PROTO |
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HS1-139RH-8
Renesas Electronics
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1 | The Radiation Hardened HS-139RH, HS-139EH consists of four independent single or dual supply voltage comparators on a single monolithic substrate. The common mode input voltage range includes ground, even when operated from a single supply and the low supply current makes these comparators suitable for low power applications. These types were designed to directly interface with TTL and CMOS. The HS-139RH, HS-139EH are fabricated on our dielectrically isolated Rad Hard Silicon Gate (RSG) process, which provi | Dual-In-Line Packages | HS1-139RH-8 |
3
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hs1101lf
EAGLE
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1 | Humidity Temperature Sensor 1 ~ 99% RH Capacitance ±2% RH 3 s Through Hole | Other | hs1101lf |
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HS1100A
NEL
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1 | Dual Baud Rate Generator | Other | HS1100A |
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DHS110
KNITTER-SWITCH
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1 | Switch DIP OFF ON SPST 10 Recessed Slide 0.1A 24VDC Gull Wing 1000Cycles 1.27mm SMD T/R | Other | DHS110 |
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PHS11R2DBR10KE341
TT Electronics
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1 | Board Mount Motion & Position Sensors Hollow Shaft Rotary Position Sensor | Other | PHS11R2DBR10KE341 |
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HS1101LF
TE Connectivity
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1 | Board Mount Humidity Sensors -60 to 140 Oper Temp 10 VAC Supply Volt | Other | HS1101LF |
2
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ECHS1153JZ
Panasonic
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1 | 15nF Polyphenylene Sulphide Film Capacitor 100V dc ±5% Through Hole | Other | ECHS1153JZ |
3
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FBMJ4516HS111-T
TAIYO YUDEN
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1 | Taiyo Yuden High Current Chip Power Line Bead, 4.6 x 1.6 x 1.1mm (1806 (4516M)) | Ferrite Bead Chip | FBMJ4516HS111-T |
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MF-RHS1100-0
Bourns
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1 | PPTC RESETTABLE FUSE, RAD, RECTNGLR, 16V 11A | Other | MF-RHS1100-0 |
3
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