IRFR5305 Footprint, Symbol and 3D Model search results

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Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
IRFR5305 Infineon	1	MOSFET Transistor, P-Channel, TO-252AA	Other	IRFR5305	3D model not available Symbol and footprint available 2	1 Download Model
IRFR5305 International Rectifier	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		IRFR5305	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFR5305 SLKOR	1	P-Channel MOSFET, VDS=-60V, ID=-30A, RDS(ON)<35mΩ@VGS=-10V, low gate charge, advanced trench technology, TO-252 package.		IRFR5305	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFR5305TRPBF Infineon	1	-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package	Other	IRFR5305TRPBF	3D model available Symbol and footprint available 3	1 Download Model

IRFR5305PBF Infineon	1	MOSFET P-Channel 55V 31A DPAK Infineon IRFR5305PBF P-channel MOSFET Transistor, 31 A, 55 V, 3-Pin DPAK	Other	IRFR5305PBF	3D model not available Symbol and footprint available 2	1 Download Model
IRFR5305TRLPBF Infineon	1	MOSFET MOSFT PCh -55V -28A 65mOhm 42nC	Transistor Outline, Vertical	IRFR5305TRLPBF	3D model available Symbol and footprint available 3	1 Download Model
IRFR5305TR International Rectifier	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		IRFR5305TR	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFR5305TR Infineon Technologies AG	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		IRFR5305TR	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFR5305TRLPBF International Rectifier	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		IRFR5305TRLPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFR5305HR Infineon Technologies AG	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		IRFR5305HR	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFR5305PBF International Rectifier	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		IRFR5305PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFR5305TRRPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		IRFR5305TRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFR5305TRRPBF International Rectifier	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		IRFR5305TRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFR5305TRL International Rectifier	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		IRFR5305TRL	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFR5305TRR International Rectifier	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		IRFR5305TRR	3D model not available Symbol and footprint not available 0	0 Build or Request

IRFR5305HR International Rectifier	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		IRFR5305HR	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFR5305TRPBF International Rectifier	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		IRFR5305TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFR5305TRPBF VBsemi Electronics Co Ltd	1	P-Channel 60 V MOSFET with 0.02 ohm RDS(on) at VGS = -10 V, 50 A continuous drain current, TO-252 package, suitable for load switch applications, RoHS compliant and halogen-free.		IRFR5305TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
AUIRFR5305TR International Rectifier	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		AUIRFR5305TR	3D model not available Symbol and footprint not available 0	0 Build or Request
AUIRFR5305 International Rectifier	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		AUIRFR5305	3D model not available Symbol and footprint not available 0	0 Build or Request
AUIRFR5305 Infineon Technologies AG	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		AUIRFR5305	3D model not available Symbol and footprint not available 0	0 Build or Request
AUIRFR5305TR Infineon Technologies AG	1	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		AUIRFR5305TR	3D model not available Symbol and footprint not available 0	0 Build or Request
AUIRFR5305TRL Infineon	1	MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms		AUIRFR5305TRL	3D model available Symbol and footprint not available 1	1 Download Model
SP001557082 Infineon Technologies AG	1	Power Field-Effect Transistor		SP001557082	3D model not available Symbol and footprint not available 0	0 Build or Request

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