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M10162040108X0ISAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040108X0ISAY |
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M10162040054X0ISAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0ISAR |
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M10162040108X0PWAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040108X0PWAR |
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M10162040108X0ISAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040108X0ISAR |
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M10162040108X0PWAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040108X0PWAY |
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M10162040054X0ISAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0ISAY |
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M10162040054X0PWAR
Renesas Electronics
|
1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040054X0PWAR |
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M10162040054X0PSAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0PSAR |
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M10162040054X0PWAY
Renesas Electronics
|
1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040054X0PWAY |
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M10162040054X0IWAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040054X0IWAY |
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M10162040108X0PSAR
Renesas Electronics
|
1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040108X0PSAR |
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M10162040108X0PSAY
Renesas Electronics
|
1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040108X0PSAY |
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M10162040108X0IWAY
Renesas Electronics
|
1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040108X0IWAY |
3
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M10162040054X0PSAY
Renesas Electronics
|
1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0PSAY |
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ABM1016538400MHZT3
ABRACON
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1 | Crystal 38.4MHz ñ20ppm (Stability) 10pF FUND 40Ohm 4-Pin Ultra Mini-CSMD T/R | Other | ABM1016538400MHZT3 |
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ABM10-16.384MHZ-D30-T3
ABRACON
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1 | CERAMIC SMD ULTRA MINIATURE QUARTZ CRYSTAL | Other | ABM10-16.384MHZ-D30-T3 |
3
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ABM10-16.000MHZ-1-N10
ABRACON
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1 | OSCILLATOR MDH SMD | Other | ABM10-16.000MHZ-1-N10 |
3
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ABM10163676MHZE20T
ABRACON
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1 | Crystal 16.3676MHz 10pF 4-Pin CSMD T/R | Other | ABM10163676MHZE20T |
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ABM10-16.000MHZ-1E15
ABRACON
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1 | CERAMIC SMD ULTRA MINIATURE QUARTZ CRYSTAL | Other | ABM10-16.000MHZ-1E15 |
3
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ABM10-16.000MHZ-D30-T3
ABRACON
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1 | ABRACON - ABM10-16.000MHZ-D30-T3 - Crystal, 16 MHz, SMD, 2.5mm x 2mm, 30 ppm, 10 pF, 20 ppm, ABM10 Series | Other | ABM10-16.000MHZ-D30-T3 |
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ABM10-165-38.400MHZ-T3
ABRACON
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1 | ABRACON - ABM10-165-38.400MHZ-T3 - CRYSTAL, 38.4MHZ, 10PF, 2.5MM X 2MM | Other | ABM10-165-38.400MHZ-T3 |
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ABM10-16.003333MHZ-8-1-A10-T
ABRACON
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1 | CERAMIC SMD ULTRA MINIATURE QUARTZ CRYSTAL | Other | ABM10-16.003333MHZ-8-1-A10-T |
3
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ABM1016000MHZ124D30T
ABRACON
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1 | Crystal 16MHz ñ30ppm (Tol) ñ30ppm (Stability) 12pF FUND 150Ohm 4-Pin Ultra Mini-CSMD T/R | Other | ABM1016000MHZ124D30T |
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ABM10-16.000MHZ-R80-7-E20-T
ABRACON
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1 | CERAMIC SMD ULTRA MINIATURE QUARTZ CRYSTAL | Other | ABM10-16.000MHZ-R80-7-E20-T |
3
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ABM10-16.000MHZ-12-R100-7D20-T
ABRACON
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1 | Other | ABM10-16.000MHZ-12-R100-7D20-T |
3
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