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HM1-65162C/883
Renesas Electronics
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1 | The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Renesas Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pin DIP, and 32 pad 8-bit wide standard which allows easy memory board layouts flexible to accommodate a variety of industry standard PROMs, RAMs, ROMs and EPROMs. The HM-65162/883 is ideally suited for use in microprocessor based systems with its 8-bit word length organization. | Ceramic Dual-In-Line Packages | HM1-65162C/883 |
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SLG59M1658V
Renesas Electronics
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1 | The SLG59M1658V is a high performance 17 mΩ, 2.5 A single‑channel nFET load switch that can operate with a 2.5 V to 5.5 V VDD supply to switch power rails from as low as 0.9 V up to the supply voltage. The SLG59M1658V incorporates two‑level overload current protection, thermal shutdown protection, fast output voltage discharge, and in-rush current control which can easily be adjusted by a small external capacitor. Using a proprietary MOSFET design, the SLG59M1658V achieves a stable 17 mΩ RDSON across a wide | Other | SLG59M1658V |
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SLG59M1657VTR
Renesas Electronics
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1 | The SLG59M1657V is a high‑performance 8.4 mΩ, 4 A single‑channel nFET load switch that can operate with a 2.5 V to 5.5 V VDD supply to switch power rails from as low as 0.9 V up to the supply voltage. The SLG59M1657V incorporates two-level overload current protection, thermal shutdown protection, and in-rush current control which can easily be adjusted by a small external capacitor. Using a proprietary MOSFET design, the SLG59M1657V achieves a stable 8.4 mΩ RDSON across a wide input voltage range. In additi | Other | SLG59M1657VTR |
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TM1650
TITAN MICRO ELECTRONICS
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1 | SOP-16_150mil LED Display Drivers | Small Outline Packages | TM1650 |
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SLG59M1658VTR
Renesas Electronics
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1 | The SLG59M1658V is a high performance 17 mΩ, 2.5 A single‑channel nFET load switch that can operate with a 2.5 V to 5.5 V VDD supply to switch power rails from as low as 0.9 V up to the supply voltage. The SLG59M1658V incorporates two‑level overload current protection, thermal shutdown protection, fast output voltage discharge, and in-rush current control which can easily be adjusted by a small external capacitor. Using a proprietary MOSFET design, the SLG59M1658V achieves a stable 17 mΩ RDSON across a wide | Other | SLG59M1658VTR |
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HM1-65162B-9
Renesas Electronics
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1 | SRAM | Ceramic Dual-In-Line Packages | HM1-65162B-9 |
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HM1-65642B/883
Renesas Electronics
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1 | The HM-65642/883 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which accommodate a variety of industry standard ROM, PROM, EPROM, EEPROM and RAMs. The HM-65642/883 is ideally suited for use in microprocessor based systems. In particular, interfacing with the Renesas 80C86 and 80C88 microprocessors is simplified by the convenient output enable (G) input. The HM-65642/883 is a full CMOS RAM which utilizes an arra | Ceramic Dual-In-Line Packages | HM1-65642B/883 |
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HM1-65162/883
Renesas Electronics
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1 | The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Renesas Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pin DIP, and 32 pad 8-bit wide standard which allows easy memory board layouts flexible to accommodate a variety of industry standard PROMs, RAMs, ROMs and EPROMs. The HM-65162/883 is ideally suited for use in microprocessor based systems with its 8-bit word length organization. | Ceramic Dual-In-Line Packages | HM1-65162/883 |
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HM1-65162C-9Z
Renesas Electronics
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0 | SRAM | Ceramic Dual-In-Line Packages | HM1-65162C-9Z |
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HM1-65162C-9
Renesas Electronics
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1 | SRAM | Ceramic Dual-In-Line Packages | HM1-65162C-9 |
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HM1-6551B/883
Renesas Electronics
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1 | The HM-6551/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. On chip latches are provided for address and data outputs allowing efficient interfacing with microprocessor systems. The data output buffers can be forced to a high impedance state for use in expanded memory arrays. The HM-6551/883 is a fully static RAM and may be maintained in any state for an indefinite | Ceramic Dual-In-Line Packages | HM1-6551B/883 |
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SLG59M1655VTR
Renesas Electronics
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1 | The SLG59M1655V is designed for load switching applications. The part comes with one 9 A rated MOSFET switched on by an ON control pin. MOSFET turn on time is independently adjusted by an external capacitor. | Other | SLG59M1655VTR |
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TM1652
LED TECHNOLOGY
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1 | ic | Small Outline Packages | TM1652 |
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RB12BTM1650
TAI-TECH
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1 | Thin Film Chip Resistor | Resistor Chip | RB12BTM1650 |
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HM1-65162-9
Renesas Electronics
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1 | SRAM | Ceramic Dual-In-Line Packages | HM1-65162-9 |
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HM1-65642-9
Renesas Electronics
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1 | The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which accommodate a variety of industry standard ROM, PROM, EPROM, EEPROM and RAMs. The HM-65642 is ideally suited for use in microprocessor based systems. In particular, interfacing with the Intersil 80C86 and 80C88 microprocessors is simplified by the convenient output enable (G) input. The HM-65642 is a full CMOS RAM which utilizes an array of six tr | Ceramic Dual-In-Line Packages | HM1-65642-9 |
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HM1-65162-9Z
Renesas Electronics
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1 | SRAM | Ceramic Dual-In-Line Packages | HM1-65162-9Z |
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HM1-65162B-9Z
Renesas Electronics
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0 | SRAM | Ceramic Dual-In-Line Packages | HM1-65162B-9Z |
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TM1650
Shenzhen Putianhe Technology Co., Ltd
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1 | LED drive control drive control drive control drive control////keyboard scanning ASIC keyboard scanning ASIC keyboard scanning ASIC keyboard scanning ASIC | Small Outline Packages | TM1650 |
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HM1-65642/883
Renesas Electronics
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1 | The HM-65642/883 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which accommodate a variety of industry standard ROM, PROM, EPROM, EEPROM and RAMs. The HM-65642/883 is ideally suited for use in microprocessor based systems. In particular, interfacing with the Renesas 80C86 and 80C88 microprocessors is simplified by the convenient output enable (G) input. The HM-65642/883 is a full CMOS RAM which utilizes an arra | Ceramic Dual-In-Line Packages | HM1-65642/883 |
2
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SLG59M1657V
Renesas Electronics
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1 | The SLG59M1657V is a high‑performance 8.4 mΩ, 4 A single‑channel nFET load switch that can operate with a 2.5 V to 5.5 V VDD supply to switch power rails from as low as 0.9 V up to the supply voltage. The SLG59M1657V incorporates two-level overload current protection, thermal shutdown protection, and in-rush current control which can easily be adjusted by a small external capacitor. Using a proprietary MOSFET design, the SLG59M1657V achieves a stable 8.4 mΩ RDSON across a wide input voltage range. In additi | Other | SLG59M1657V |
3
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HM1-6514/883
Renesas Electronics
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1 | The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays. Gated inputs allow lower operating current and also eliminates the need for pull up or pull down resistors. The HM-6514/88 | Ceramic Dual-In-Line Packages | HM1-6514/883 |
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HM1-6514B/883
Renesas Electronics
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1 | The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays. Gated inputs allow lower operating current and also eliminates the need for pull up or pull down resistors. The HM-6514/88 | Dual-In-Line Packages | HM1-6514B/883 |
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M165-TY-24
OMRON Corporation
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1 | Pushbutton Switch | M165-TY-24 |
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M165-APY-5
OMRON Corporation
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1 | Pushbutton Switch | M165-APY-5 |
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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