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Technical Content

M3016 Model Download Search Results

Showing 25 of 4413 results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image
M30-16 Torotel Products Inc
1 General Purpose Inductor, 300000uH, 1%, 1 Element, Iron-Core M30-16
3D model not available
Symbol and footprint not available
 0
0 Build or Request
Part Image Part Image
M30162040108X0IWAY Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead M30162040108X0IWAY
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
M30162040054X0PSAR Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M30162040054X0PSAR
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
M30162040108X0ISAY Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M30162040108X0ISAY
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
M30162040108X0PWAY Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead M30162040108X0PWAY
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
M30162040054X0ISAY Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M30162040054X0ISAY
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
M30162040054X0IWAY Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead M30162040054X0IWAY
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
M30162040108X0PSAY Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M30162040108X0PSAY
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
M30162040108X0ISAR Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M30162040108X0ISAR
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
M30162040108X0PWAR Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead M30162040108X0PWAR
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
M30162040108X0PSAR Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M30162040108X0PSAR
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
M30162040054X0PWAY Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead M30162040054X0PWAY
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
M30162040054X0PSAY Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M30162040054X0PSAY
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
M30162040054X0ISAR Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M30162040054X0ISAR
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
M30162040054X0PWAR Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead M30162040054X0PWAR
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
YM3016-D Yamaha
1 D/A CONVERTER 2-Channel Serial & Binary input Floating D/ A Converter Dual-In-Line Packages YM3016-D
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
M3016-EVK Renesas Electronics
1 The M3016 evaluation kit contains the 16Mbit MRAM and enables users to develop interactive hardware solutions using the popular Arduino type board. The plug-n-play kit features an Arduino host board and terminal emulator software that communicates with the PC computer USB interface. Test programs provided allow users to quickly evaluate the functionality of the MRAM device. M3016-EVK
3D model not available
Symbol and footprint not available
 0
0 Build or Request
Part Image Part Image
M3016316035NX0ITBR Renesas Electronics
0 The M3016316 is a high performance parallel interface non-volatile MRAM with 16Mbit density. It features SRAM compatible read and write access times of 35ns or 45ns. It operates from -40° to +85° (industrial version) and -40°C to +105°C (industrial plus version). The device is offered in 48-ball FBGA and 54-TSOP packages. M3016316035NX0ITBR
3D model not available
Symbol and footprint not available
 0
0 Build or Request
Part Image Part Image
M3016316045NX0ITBY Renesas Electronics
0 The M3016316 is a high performance parallel interface non-volatile MRAM with 16Mbit density. It features SRAM compatible read and write access times of 35ns or 45ns. It operates from -40° to +85° (industrial version) and -40°C to +105°C (industrial plus version). The device is offered in 48-ball FBGA and 54-TSOP packages. M3016316045NX0ITBY
3D model not available
Symbol and footprint not available
 0
0 Build or Request
Part Image Part Image
M3016316035NX0IBCR Renesas Electronics
1 The M3016316 is a high performance parallel interface non-volatile MRAM with 16Mbit density. It features SRAM compatible read and write access times of 35ns or 45ns. It operates from -40° to +85° (industrial version) and -40°C to +105°C (industrial plus version). The device is offered in 48-ball FBGA and 54-TSOP packages. M3016316035NX0IBCR
3D model not available
Symbol and footprint not available
 0
0 Build or Request
Part Image Part Image
M3016316045NX0ITBR Renesas Electronics
0 The M3016316 is a high performance parallel interface non-volatile MRAM with 16Mbit density. It features SRAM compatible read and write access times of 35ns or 45ns. It operates from -40° to +85° (industrial version) and -40°C to +105°C (industrial plus version). The device is offered in 48-ball FBGA and 54-TSOP packages. M3016316045NX0ITBR
3D model not available
Symbol and footprint not available
 0
0 Build or Request
Part Image Part Image
M30162040108X0PSAR Integrated Device Technology Inc
1 SOIC-8, Reel M30162040108X0PSAR
3D model not available
Symbol and footprint not available
 0
0 Build or Request
Part Image Part Image
M30162040054X0IWAR Integrated Device Technology Inc
1 DFN-8, Reel M30162040054X0IWAR
3D model not available
Symbol and footprint not available
 0
0 Build or Request
Part Image Part Image
M3016316035NX0PTBR Renesas Electronics
0 The M3016316 is a high performance parallel interface non-volatile MRAM with 16Mbit density. It features SRAM compatible read and write access times of 35ns or 45ns. It operates from -40° to +85° (industrial version) and -40°C to +105°C (industrial plus version). The device is offered in 48-ball FBGA and 54-TSOP packages. M3016316035NX0PTBR
3D model not available
Symbol and footprint not available
 0
0 Build or Request
Part Image Part Image
M3016316045NX0PBCY Renesas Electronics
0 The M3016316 is a high performance parallel interface non-volatile MRAM with 16Mbit density. It features SRAM compatible read and write access times of 35ns or 45ns. It operates from -40° to +85° (industrial version) and -40°C to +105°C (industrial plus version). The device is offered in 48-ball FBGA and 54-TSOP packages. M3016316045NX0PBCY
3D model not available
Symbol and footprint not available
 0
0 Build or Request
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