MS366 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Q2: N-Channel Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A ; Low inductance packaging shortens rise/fall times, resulting in lower switching losses ; Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing ; RoHS Compliant Other FDMS3660S 1 Download Model
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FDMS3662 onsemi
1 100% UIL Tested ; RoHS compliant ; MSL1 robust package design ; Advanced Package and Silicon combination for low RDS(on) ; Maximum RDS(on) = 14.8 mΩ at VGS = 10 V, ID = 8.9 A Other FDMS3662 1 Download Model
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MS366-10C MASACH TECH LTD.
1 37 x 34.5 x 2.8mm Two-piece Drawn-Seamless RF Shield/EMI Shield COVER (CRS) MS366-10C 1 Download Model
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MS366-10S-NS MASACH TECH LTD.
1 36.6 x 34.1 x 3.3mm One-piece Drawn-Seamless RF Shield/EMI Shield (Nickel-Silver) MS366-10S-NS 1 Download Model
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MS366-10F MASACH TECH LTD.
1 36.6 x 34.1 x 3.3mm Two-piece Drawn-Seamless RF Shield/EMI Shield FRAME (CRS) MS366-10F 1 Download Model
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MS366-10C-NS MASACH TECH LTD.
1 37 x 34.5 x 2.8mm Two-piece Drawn-Seamless RF Shield/EMI Shield COVER (Nickel-Silver) MS366-10C-NS 1 Download Model
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MS366-10F-NS MASACH TECH LTD.
1 36.6 x 34.1 x 3.3mm Two-piece Drawn-Seamless RF Shield/EMI Shield FRAME (Nickel-Silver) MS366-10F-NS 1 Download Model
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MS366-10S MASACH TECH LTD.
1 36.6 x 34.1 x 3.3mm One-piece Drawn-Seamless RF Shield/EMI Shield (CRS) MS366-10S 1 Download Model
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PSN0.5MS366K KOA Speer Electronics Inc
1 Fixed Resistor, Wire Wound, 2W, 36000000ohm, 15000V, 10% +/-Tol, -1000,1000ppm/Cel, PSN0.5MS366K 0 Build or Request
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PSN2MS366K KOA Speer Electronics Inc
1 Fixed Resistor, Wire Wound, 10W, 36000000ohm, 60000V, 10% +/-Tol, -1000,1000ppm/Cel, PSN2MS366K 0 Build or Request
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PSN05MS366J KOA Speer Electronics Inc
1 Fixed Resistor, Wire Wound, 2W, 36000000ohm, 15000V, 5% +/-Tol, 1500ppm/Cel, Chassis Mount PSN05MS366J 0 Build or Request
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PSN2MS366M KOA Speer Electronics Inc
1 Fixed Resistor, Wire Wound, 10W, 36000000ohm, 60000V, 20% +/-Tol, -1000,1000ppm/Cel, PSN2MS366M 0 Build or Request
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FDMS3662 Rochester Electronics LLC
1 8.9A, 100V, 0.0148ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN FDMS3662 0 Build or Request
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FDMS3668S Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA FDMS3668S 0 Build or Request
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PSN3MS366J KOA Speer Electronics Inc
1 Fixed Resistor, Wire Wound, 25W, 36000000ohm, 90000V, 5% +/-Tol, -1000,1000ppm/Cel, PSN3MS366J 0 Build or Request
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PSN0.5MS366J KOA Speer Electronics Inc
1 Fixed Resistor, Wire Wound, 2W, 36000000ohm, 15000V, 5% +/-Tol, -1000,1000ppm/Cel, PSN0.5MS366J 0 Build or Request
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FDMS3664S Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA FDMS3664S 0 Build or Request
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PSN4MS366M KOA Speer Electronics Inc
1 Fixed Resistor, Wire Wound, 50W, 36000000ohm, 120000V, 20% +/-Tol, -1000,1000ppm/Cel, PSN4MS366M 0 Build or Request
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PSN0.5MS366M KOA Speer Electronics Inc
1 Fixed Resistor, Wire Wound, 2W, 36000000ohm, 15000V, 20% +/-Tol, -1000,1000ppm/Cel, PSN0.5MS366M 0 Build or Request
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PSN6MS366M KOA Speer Electronics Inc
1 Fixed Resistor, Wire Wound, 250W, 36000000ohm, 300000V, 20% +/-Tol, -1000,1000ppm/Cel, PSN6MS366M 0 Build or Request
Part Image Part Image 1 Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA FDMS3668S 0 Build or Request
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PSN3MS366K KOA Speer Electronics Inc
1 Fixed Resistor, Wire Wound, 25W, 36000000ohm, 90000V, 10% +/-Tol, -1000,1000ppm/Cel, PSN3MS366K 0 Build or Request
Part Image Part Image 1 Low inductance packaging shortens rise/fall times, resulting in lower switching losses; RoHS Compliant; Q2: N-Channel Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A; Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing FDMS3664S 1 Download Model
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PSN6MS366J KOA Speer Electronics Inc
1 Fixed Resistor, Wire Wound, 250W, 36000000ohm, 300000V, 5% +/-Tol, -1000,1000ppm/Cel, PSN6MS366J 0 Build or Request
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FDMS3660AS Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA FDMS3660AS 0 Build or Request
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