NTBT0 Model Download Search Results
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NTBT023N65GN1TXG
onsemi
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1 | Optimized for High Switching Frequency (500 kHz to 2 MHz); Low Gate Charge and Output Charge (Qoss, Qg); No Reverse-Recovery Charge; Capable of Reverse Conduction | Other | NTBT023N65GN1TXG |
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NTBT050N65GN1TXG
onsemi
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1 | Enhancement Mode Gallium Nitride (GaN) HEMT 650 V, 39 mΩ , 40 A, PDSO-G16 , Surface Mount , 1.2 mm pitch , −55 °C to +150 °C | Other | NTBT050N65GN1TXG |
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NTBT035N65GN1TXG
onsemi
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1 | No Reverse-Recovery Charge; Capable of Reverse Conduction; Optimized for High Switching Frequency (500 kHz to 2 MHz); Low Gate Charge and Output Charge (Qoss, Qg) | Other | NTBT035N65GN1TXG |
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ENGNTBT050N65GN1TXG
onsemi
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1 | Optimized for High Switching Frequency (500 kHz to 2 MHz); Low Gate Charge and Output Charge (Qoss, Qg); No Reverse-Recovery Charge; Capable of Reverse Conduction | Other | ENGNTBT050N65GN1TXG |
2
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ENGNTBT023N65GN1TXG
onsemi
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1 | Optimized for High Switching Frequency (500 kHz to 2 MHz); Low Gate Charge and Output Charge (Qoss, Qg); No Reverse-Recovery Charge; Capable of Reverse Conduction | Other | ENGNTBT023N65GN1TXG |
2
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ENGNTBT035N65GN1TXG
onsemi
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1 | N-Channel 650 V 64A (Tc) 462W (Tc) Surface Mount TOLT -55°C ~ 150°C 488 pF @ 400 V | Other | ENGNTBT035N65GN1TXG |
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