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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	R1RW0416DSB-2LR Renesas Electronics	1	Renesas Electronics SRAM, R1RW0416DSB-2LR- 4Mbit	Small Outline Packages	R1RW0416DSB-2LR	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-0PI#D0 Renesas Electronics	1	The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.	Small Outline Packages	R1RW0416DSB-0PI#D0	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DGE-2PR#B0 Renesas Electronics	1	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Other	R1RW0416DGE-2PR#B0	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-2PI#D0 Renesas Electronics	1	The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.	Small Outline Packages	R1RW0416DSB-2PI#D0	3D model available Symbol and footprint available 3	1 Download Model

	R1RW0416DSB-2PR#D0 Renesas Electronics	1	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Small Outline Packages	R1RW0416DSB-2PR#D0	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-2PR Renesas Electronics	1	Renesas Electronics SRAM, R1RW0416DSB-2PR- 4Mbit	Small Outline Packages	R1RW0416DSB-2PR	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-2LR#D1 Renesas Electronics	1	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Small Outline Packages	R1RW0416DSB-2LR#D1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-2LR#D0 Renesas Electronics	1	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Small Outline Packages	R1RW0416DSB-2LR#D0	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-2PI#S1 Renesas Electronics	0	The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.	Small Outline Packages	R1RW0416DSB-2PI#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-0PR#D0 Renesas Electronics	0	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Small Outline Packages	R1RW0416DSB-0PR#D0	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-0PR#D1 Renesas Electronics	0	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Small Outline Packages	R1RW0416DSB-0PR#D1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DGE-2PI#B1 Renesas Electronics	1	The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.	Other	R1RW0416DGE-2PI#B1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0408DGE-2PI#B1 Renesas Electronics	1	The R1RW0408DI is a 4-Mbit High-Speed static RAM organized 512-kword × 8-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408DI is packaged in 400-mil 36-pin SOJ for high density surface mounting.	Other	R1RW0408DGE-2PI#B1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-2SR#D1 Renesas Electronics	0	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Small Outline Packages	R1RW0416DSB-2SR#D1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0408DGE-2LR#B1 Renesas Electronics	1	SRAM SRAM 4MB FAST X8 3V SOJ 12NS 0TO70C \|SMD/SMT ,IC SRAM 4MBIT PARALLEL 36SOJ \|+ 70C	Other	R1RW0408DGE-2LR#B1	3D model available Symbol and footprint available 3	1 Download Model

	R1RW0416DSB-2PI#D1 Renesas Electronics	1	The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.	Small Outline Packages	R1RW0416DSB-2PI#D1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-0PI#S1 Renesas Electronics	0	The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.	Small Outline Packages	R1RW0416DSB-0PI#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-0PR#S1 Renesas Electronics	0	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Small Outline Packages	R1RW0416DSB-0PR#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-2PR#D1 Renesas Electronics	1	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Small Outline Packages	R1RW0416DSB-2PR#D1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DGE-2LR Renesas Electronics	1	Renesas Electronics SRAM, R1RW0416DGE-2LR- 4Mbit	Other	R1RW0416DGE-2LR	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DGE-2LR#B1 Renesas Electronics	1	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Other	R1RW0416DGE-2LR#B1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-2PR#S1 Renesas Electronics	0	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Small Outline Packages	R1RW0416DSB-2PR#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-0PI#D1 Renesas Electronics	0	The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.	Small Outline Packages	R1RW0416DSB-0PI#D1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DGE-2PR#B1 Renesas Electronics	0	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Other	R1RW0416DGE-2PR#B1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-2SR Renesas Electronics Corporation	1	Standard SRAM, 256KX16, 12ns, CMOS, PDSO44		R1RW0416DSB-2SR	3D model not available Symbol and footprint not available 0	0 Build or Request
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