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SCT10N120 STMicroelectronics
1 MOSFET Silicon carbide Power MOSFET 1200 V, 10 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 package Transistor Outline, Vertical SCT10N120 1 Download Model
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SCT10N120H STMicroelectronics
1 Trans MOSFET N-CH SiC 1.2KV 13A 3-Pin(2+Tab) H2PAK T/R Other SCT10N120H 1 Download Model
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SCT10N120AG STMicroelectronics
1 MOSFET PTD NEW MAT & PWR SOLUTION Transistor Outline, Vertical SCT10N120AG 1 Download Model
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