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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	SIS178LDN-T1-GE3 Vishay	1	MOSFET N-CHANNEL 70-V (D-S)	Other	SIS178LDN-T1-GE3	3D model available Symbol and footprint available 3	1 Download Model
	SIS106DN-T1-GE3 Vishay	1	N-Channel MOSFET, 16 A, 60 V, 8-Pin 1212 Vishay Siliconix SiS106DN-T1-GE3	Other	SIS106DN-T1-GE3	3D model available Symbol and footprint available 3	1 Download Model
	R1LP5256ESA-5SI#S1 Renesas Electronics	1	The R1LP5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32, 768-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LP5256E Series has realized higher density, higher performance and low power consumption. The R1LP5256E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 28-pin SOP and 28-pin TSOP.	Other	R1LP5256ESA-5SI#S1	3D model not available Symbol and footprint available 2	1 Download Model
	R1LV0108ESN-5SI#S1 Renesas Electronics	1	The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131, 072-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV0108E Series has realized higher density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP, 32-pin TSOP and 32-pin sTSOP.	Small Outline Packages	R1LV0108ESN-5SI#S1	3D model available Symbol and footprint available 3	1 Download Model

	SIS176LDN-T1-GE3 Vishay	1	VISHAY - SIS176LDN-T1-GE3 - Power MOSFET, N Channel, 70 V, 42.3 A, 0.0086 ohm, PowerPAK 1212, Surface Mount	Other	SIS176LDN-T1-GE3	3D model available Symbol and footprint available 3	1 Download Model
	R1LV0208BSA-5SI#S1 Renesas Electronics	1	The R1LV0208BSA is a family of low voltage 2-Mbit static RAMs organized as 262, 144-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV0208BSA has realized higher density, higher performance and low power consumption. The R1LV0208BSA is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. The R1LV0208BSA has been packaged in 32-pin sTSOP.	Small Outline Packages	R1LV0208BSA-5SI#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1LV0108ESA-5SI#S1 Renesas Electronics	1	The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131, 072-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV0108E Series has realized higher density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP, 32-pin TSOP and 32-pin sTSOP.	Small Outline Packages	R1LV0108ESA-5SI#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1LV0108ESF-5SI#S1 Renesas Electronics	1	The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131, 072-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV0108E Series has realized higher density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP, 32-pin TSOP and 32-pin sTSOP.	Small Outline Packages	R1LV0108ESF-5SI#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1LP0108ESN-5SI#S1 Renesas Electronics	1	The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131, 072-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LP0108E Series has realized higher density, higher performance and low power consumption. The R1LP0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP, 32-pin TSOP and 32-pin sTSOP.	Small Outline Packages	R1LP0108ESN-5SI#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1LV3216RSA-5SI#S1 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered.	Small Outline Packages	R1LV3216RSA-5SI#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1LV0216BSB-5SI#S1 Renesas Electronics	1	The R1LV0216BSB is a family of low voltage 2-Mbit static RAMs organized as 131, 072-word by 16-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV0216BSB has realized higher density, higher performance and low power consumption. The R1LV0216BSB is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. The R1LV0216BSB has been packaged in 44-pin TSOP.	Small Outline Packages	R1LV0216BSB-5SI#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1LP0408DSP-5SI#S1 Renesas Electronics	1	The R1LP0408D Series is a family of 4-Mbit static RAMs organized 512-kword × 8-bit, fabricated by Renesas’s high-performance CMOS and TFT technologies. The R1LP0408D Series has realized higher density, higher performance and low power consumption. The R1LP0408D Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 32-pin SOP and 32-pin TSOP.	Small Outline Packages	R1LP0408DSP-5SI#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1LV1616HSA-4SI#S1 Renesas Electronics	1	The R1LV1616HSA-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit with embedded ECC. R1LV1616HSA-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting.	Small Outline Packages	R1LV1616HSA-4SI#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1LP0108ESA-5SI#S1 Renesas Electronics	1	The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131, 072-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LP0108E Series has realized higher density, higher performance and low power consumption. The R1LP0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP, 32-pin TSOP and 32-pin sTSOP.	Small Outline Packages	R1LP0108ESA-5SI#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1LP0108ESF-5SI#S1 Renesas Electronics	1	The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131, 072-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LP0108E Series has realized higher density, higher performance and low power consumption. The R1LP0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP, 32-pin TSOP and 32-pin sTSOP.	Small Outline Packages	R1LP0108ESF-5SI#S1	3D model available Symbol and footprint available 3	1 Download Model

	R1LV1616HSA-5SI#S1 Renesas Electronics	1	The R1LV1616HSA-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit with embedded ECC. R1LV1616HSA-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting.	Small Outline Packages	R1LV1616HSA-5SI#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1LP5256ESP-5SI#S1 Renesas Electronics	1	The R1LP5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32, 768-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LP5256E Series has realized higher density, higher performance and low power consumption. The R1LP5256E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 28-pin SOP and 28-pin TSOP.	Small Outline Packages	R1LP5256ESP-5SI#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1LP0408DSB-5SI#S1 Renesas Electronics	1	The R1LP0408D Series is a family of 4-Mbit static RAMs organized 512-kword × 8-bit, fabricated by Renesas’s high-performance CMOS and TFT technologies. The R1LP0408D Series has realized higher density, higher performance and low power consumption. The R1LP0408D Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 32-pin SOP and 32-pin TSOP.	Small Outline Packages	R1LP0408DSB-5SI#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1LV5256ESA-5SI#S1 Renesas Electronics	1	The R1LV5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32, 768-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV5256E Series has realized higher density, higher performance and low power consumption. The R1LV5256E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 28-pin SOP and 28-pin TSOP.	Other	R1LV5256ESA-5SI#S1	3D model not available Symbol and footprint available 2	1 Download Model
	SIS-106-H047-57 E-tec Interconnect Ltd	1	IC Socket, SIP6, 6 Contact(s), 2.54mm Term Pitch, Solder,		SIS-106-H047-57	3D model not available Symbol and footprint not available 0	0 Build or Request
	SIS-120-H047-57 E-tec Interconnect Ltd	1	Board Connector, 20 Contact(s), 1 Row(s), Female, Straight, Solder Terminal,		SIS-120-H047-57	3D model not available Symbol and footprint not available 0	0 Build or Request
	SIS-108-H047-57 E-tec Interconnect Ltd	1	IC Socket, SIP8, 8 Contact(s), 2.54mm Term Pitch, Solder,		SIS-108-H047-57	3D model not available Symbol and footprint not available 0	0 Build or Request
	SIS-104-H047-57 E-tec Interconnect Ltd	1	IC Socket, SIP4, 4 Contact(s),		SIS-104-H047-57	3D model not available Symbol and footprint not available 0	0 Build or Request
	SIS-102-H047-57 E-tec Interconnect Ltd	1	IC Socket, SIP2, 2 Contact(s),		SIS-102-H047-57	3D model not available Symbol and footprint not available 0	0 Build or Request
	SIS-10-TOF Adam Technologies Inc	1	IC Socket, SIP10, 10 Contact(s), 2.54mm Term Pitch, Solder		SIS-10-TOF	3D model not available Symbol and footprint not available 0	0 Build or Request
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