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ISL2111ABZ-T
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline Packages | ISL2111ABZ-T |
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ISL2110ABZ-T
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline Packages | ISL2110ABZ-T |
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ISL2110ABZ
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline Packages | ISL2110ABZ |
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ISL2110AR4Z-T
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2110AR4Z-T |
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ISL2111AR4Z-T
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2111AR4Z-T |
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ISL2111AR4Z
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2111AR4Z |
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ISL2111BR4Z-T
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2111BR4Z-T |
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BSL211SPH6327XTSA1
Infineon
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1 | MOSFETs SMALL SIGNAL+P-CH | SOT23 (6-Pin) | BSL211SPH6327XTSA1 |
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ISL2111ABZ
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline Packages | ISL2111ABZ |
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ISL2111ARTZ-T
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2111ARTZ-T |
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ISL2111BR4Z
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2111BR4Z |
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ISL2110AR4Z
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2110AR4Z |
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ISL2111ARTZ
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2111ARTZ |
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SL211L8F
KOA Speer Electronics Inc
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1 | Fixed Resistor, Metal Strip, 2W, 0.0118ohm, 1% +/-Tol, -180,180ppm/Cel, 4528, | SL211L8F |
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SL211C104JABTR2
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 5% +Tol, 5% -Tol, X7R, -/+15ppm/Cel TC, 0.1uF, 2012, | SL211C104JABTR2 |
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SL211C105MABTR2
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 20% +Tol, 20% -Tol, X7R, -/+15ppm/Cel TC, 1uF, 2015, | SL211C105MABTR2 |
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SL211C472JABT
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 5% +Tol, 5% -Tol, X7R, -/+15ppm/Cel TC, 0.0047uF, 2012, | SL211C472JABT |
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SL211C102KABTR2
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 10% +Tol, 10% -Tol, X7R, -/+15ppm/Cel TC, 0.001uF, 2012, | SL211C102KABTR2 |
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SL211A222KABAP1
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 10% +Tol, 10% -Tol, C0G, -/+30ppm/Cel TC, 0.0022uF, 2012, | SL211A222KABAP1 |
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SL211A472KABTRX
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 10% +Tol, 10% -Tol, C0G, -/+30ppm/Cel TC, 0.0047uF, 2012, | SL211A472KABTRX |
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SL211C152JABTR2
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 5% +Tol, 5% -Tol, X7R, -/+15ppm/Cel TC, 0.0015uF, 2012, | SL211C152JABTR2 |
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SL211A102KABAP1
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 10% +Tol, 10% -Tol, C0G, -/+30ppm/Cel TC, 0.001uF, 2012, | SL211A102KABAP1 |
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SL211C473MAB
Kyocera AVX Components
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1 | Ceramic Capacitor, Ceramic, 100V, 20% +Tol, 20% -Tol, X7R, 15% TC, 0.047uF, Through Hole Mount, 2012, RADIAL LEADED | SL211C473MAB |
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SL211L5F
KOA Speer Electronics Inc
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1 | Fixed Resistor, Metal Strip, 2W, 0.0115ohm, 1% +/-Tol, -180,180ppm/Cel, 4528, | SL211L5F |
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SL211C683MABT
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 20% +Tol, 20% -Tol, X7R, -/+15ppm/Cel TC, 0.068uF, 2012, | SL211C683MABT |
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