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ISL2111BR4Z-T
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2111BR4Z-T |
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ISL2110AR4Z-T
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2110AR4Z-T |
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ISL2110ABZ
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline Packages | ISL2110ABZ |
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ISL2110ABZ-T
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline Packages | ISL2110ABZ-T |
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ISL2111ABZ-T
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline Packages | ISL2111ABZ-T |
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BSL211SPH6327XTSA1
Infineon
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1 | MOSFETs SMALL SIGNAL+P-CH | SOT23 (6-Pin) | BSL211SPH6327XTSA1 |
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ISL2111ABZ
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline Packages | ISL2111ABZ |
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ISL2111ARTZ
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2111ARTZ |
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ISL2111BR4Z
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2111BR4Z |
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ISL2110AR4Z
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2110AR4Z |
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ISL2111ARTZ-T
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2111ARTZ-T |
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ISL2111AR4Z
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2111AR4Z |
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ISL2111AR4Z-T
Renesas Electronics
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1 | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in | Small Outline No-lead | ISL2111AR4Z-T |
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SL21181
Foxconn
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1 | Board Connector, 36 Contact(s), 2 Row(s), Female, Right Angle, Solder Terminal, Socket, | SL21181 |
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SL211C682JABTR1
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 5% +Tol, 5% -Tol, X7R, 15% TC, 0.0068uF, Through Hole Mount | SL211C682JABTR1 |
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SL211C223KAB
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 10% +Tol, 10% -Tol, X7R, 15% TC, 0.022uF, Through Hole Mount | SL211C223KAB |
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SL211A391JABTRX
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 5% +Tol, 5% -Tol, C0G, -/+30ppm/Cel TC, 0.00039uF, 2012, | SL211A391JABTRX |
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SL211C683MABAP1
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 20% +Tol, 20% -Tol, X7R, 15% TC, 0.068uF, Through Hole Mount | SL211C683MABAP1 |
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SL211C153MABT
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 20% +Tol, 20% -Tol, X7R, 15% TC, 0.015uF, Through Hole Mount | SL211C153MABT |
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SL211A682FABTRX
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 1% +Tol, 1% -Tol, C0G, -/+30ppm/Cel TC, 0.0068uF, 2012, | SL211A682FABTRX |
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SL211C223MABTR2
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 20% +Tol, 20% -Tol, X7R, -/+15ppm/Cel TC, 0.022uF, 2012, | SL211C223MABTR2 |
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SL211A392FABTR1
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 1% +Tol, 1% -Tol, C0G, 30ppm/Cel TC, 0.0039uF, Through Hole Mount | SL211A392FABTR1 |
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SL211C334KABTR1
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 10% +Tol, 10% -Tol, X7R, 15% TC, 0.33uF, Through Hole Mount | SL211C334KABTR1 |
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SL211C103MABTR2
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 20% +Tol, 20% -Tol, X7R, -/+15ppm/Cel TC, 0.01uF, 2012, | SL211C103MABTR2 |
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SL211C683MABT
Kyocera AVX Components
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1 | Ceramic Capacitor, Multilayer, Ceramic, 100V, 20% +Tol, 20% -Tol, X7R, 15% TC, 0.068uF, Through Hole Mount | SL211C683MABT |
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