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FDC365P - onsemi

Description: Obsolete - P-Channel PowerTrench MOSFET, 2.5V Specified, -20V, -5.8A, 30mΩ

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PCB Footprints
FDC365P - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - FDC365P
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FDC365P - onsemi  - 3D model - SOT23 (6-Pin) - FDC365P
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FDC365P Details

  • Manufacturer Part Number:

    FDC365P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SUPERSOT-6

  • Manufacturer Package Code:

    419BL

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    35 V

  • Drain Current-Max (ID):

    4.3 A

  • Drain-source On Resistance-Max:

    0.055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    80 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC365P Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device is recommended. This helps to dissipate heat efficiently and reduce thermal resistance.
  • The FDC365P requires a bias voltage of 5V to 15V. Ensure the bias voltage is stable and within the recommended range. Also, use a low-ESR capacitor (e.g., 10uF) to decouple the bias pin from the power supply.
  • The maximum allowable current through the FDC365P is 1A. Exceeding this limit may cause the device to overheat or fail. Ensure the current is within the recommended range to ensure reliable operation.
  • Use a TVS (Transient Voltage Suppressor) diode or a zener diode to protect the FDC365P from overvoltage. For ESD protection, use a low-capacitance ESD diode or a dedicated ESD protection IC.
  • The recommended storage temperature range for FDC365P is -40°C to 125°C. Storing the device outside this range may affect its reliability and performance.

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FDC365P Overview

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Part Image FDC365P Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 4.3A I(D), 35V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET