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FQD3P50TM - onsemi

Description: MOSFET 500V P-Channel QFET

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FQD3P50TM - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE A
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FQD3P50TM Details

  • Manufacturer Part Number:

    FQD3P50TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.3

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    2.1 A

  • Drain-source On Resistance-Max:

    4.9 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    8.4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD3P50TM Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQD3P50TM is -55°C to 150°C.
  • To ensure proper biasing, the FQD3P50TM requires a gate-source voltage (Vgs) of 10-15V and a drain-source voltage (Vds) of 50V or less. Additionally, a gate resistor (Rg) of 1-10kΩ is recommended to prevent oscillations.
  • For optimal thermal performance, it is recommended to use a PCB with a thermal pad and a heat sink. The device should be placed near a thermal via or a heat sink to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended for the PCB.
  • To protect the FQD3P50TM from ESD, it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and follow proper handling and storage procedures. Additionally, an ESD protection diode can be added to the circuit to prevent ESD damage.
  • The FQD3P50TM is manufactured according to onsemi's quality and reliability standards, which include ISO 9001:2015 certification, AEC-Q101 automotive qualification, and compliance with relevant industry standards such as JEDEC and IPC.

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FQD3P50TM Overview

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Part Image FQD3P50TF Rochester Electronics LLC

2.1A, 500V, 4.9ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

Part Image FQD3P50TM Fairchild Semiconductor Corporation

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Part Image FQD3P50TF Fairchild Semiconductor Corporation

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Part Image FQD3P50TM-F085 onsemi

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