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IRFD210PBF - Vishay

Description: VISHAY - IRFD210PBF - Power MOSFET, N Channel, 200 V, 600 mA, 1.5 ohm, DIP, Through Hole

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PCB Footprints
IRFD210PBF - Vishay PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - HVMDIP
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IRFD210PBF - Vishay  - 3D model - Dual-In-Line Packages - HVMDIP
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IRFD210PBF Details

  • Manufacturer Part Number:

    IRFD210PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    0.6 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFD210PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFD210PBF is -55°C to 175°C.
  • To ensure reliability, follow proper PCB design and layout guidelines, use a suitable thermal management system, and ensure the device is operated within its specified ratings and conditions.
  • The recommended gate drive voltage for the IRFD210PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFD210PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB design and layout to minimize parasitic inductance and capacitance.
  • Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure the device is stored in an ESD-protected package.

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IRFD210PBF Overview

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Part Image IRFD210 Intersil Corporation

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Part Image IRFD210 Vishay Intertechnologies

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Part Image IRFD210 Fairchild Semiconductor Corporation

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Part Image IRFD210 Motorola Semiconductor Products

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For a full list of alternate parts for IRFD210PBF, check out Findchips.com