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IRFL4105PBF Overview

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ZXMN6A08GTC Diodes Incorporated

Power Field-Effect Transistor, 3.8A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

IRLL2705 Infineon Technologies AG

Power Field-Effect Transistor, 3.8A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

SP001551996 Infineon Technologies AG

Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

IRFL4105TR Infineon Technologies AG

Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

IRFL4105HR International Rectifier

Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

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Image	Part Number	Model
	ZXMN6A08GTC Diodes Incorporated Power Field-Effect Transistor, 3.8A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
	IRLL2705 Infineon Technologies AG Power Field-Effect Transistor, 3.8A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
	SP001551996 Infineon Technologies AG Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
	IRFL4105TR Infineon Technologies AG Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
	IRFL4105HR International Rectifier Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
For a full list of alternate parts for IRFL4105PBF, check out Findchips.com

IRFL4105PBF - Infineon

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