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FDN359AN - onsemi

Description: Very Fast Switching; 2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V, RDS(ON) = 0.060 Ω @ VGS = 4.5 V. ; Low Gate Charge (5nC typical).; High Power Version of Industry Standard SOT-23 Package. Identical Pin-Out to SOT-23 with 30% Higher Power Handling Capability

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PCB Footprints
FDN359AN - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23_1+
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3D Models
FDN359AN - onsemi  - 3D model - SOT23 (3-Pin) - SOT23_1+
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FDN359AN Details

  • Manufacturer Part Number:

    FDN359AN

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SUPERSOT-3

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7.07

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.7 A

  • Drain-source On Resistance-Max:

    0.046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDN359AN Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a bypass capacitor (CBYP) to ensure proper biasing. A 10uF ceramic capacitor is recommended for CBYP. Additionally, the input voltage should be filtered to prevent noise and ripple.
  • The maximum allowed current through the device is 3A. Exceeding this limit may cause the device to overheat or fail. Ensure that the input current is limited to prevent damage to the device.
  • Use a voltage regulator or a voltage supervisor to ensure the input voltage remains within the recommended range (4.5V to 18V). Add overvoltage protection (OVP) and undervoltage protection (UVP) circuits to prevent damage from voltage transients.
  • The recommended operating temperature range for the FDN359AN is -40°C to 150°C. Operating the device outside this range may affect its performance and reliability.

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FDN359AN Overview

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Part Image FDN359AN Rochester Electronics LLC

2700mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3