HGT1S10N120BNST - onsemi

HGT1S10N120BNST Details

• Manufacturer Part Number:

  HGT1S10N120BNST

• Brand Name:

  onsemi

• Pbfree Code:

  Yes

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Part Package Code:

  D2PAK-3 / TO-263-2

• Manufacturer Package Code:

  418AJ

• Country Of Origin:

  Mainland China

• ECCN Code:

  EAR99

• Manufacturer:

  onsemi

• YTEOL:

  6

• Additional Feature:

  LOW CONDUCTION LOSS

• Case Connection:

  COLLECTOR

• Collector Current-Max (IC):

  35 A

• Collector-Emitter Voltage-Max:

  1200 V

• Configuration:

  SINGLE

• Gate-Emitter Voltage-Max:

  20 V

• JEDEC-95 Code:

  TO-263AB

• JESD-30 Code:

  R-PSSO-G2

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  298 W

• Qualification Status:

  Not Qualified

• Surface Mount:

  YES

• Terminal Finish:

  MATTE TIN

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Application:

  MOTOR CONTROL

• Transistor Element Material:

  SILICON

• Turn-off Time-Nom (toff):

  265 ns

• Turn-on Time-Nom (ton):

  34 ns

• VCEsat-Max:

  4.2 V