Part Image

IRFS4310ZTRLPBF - Infineon

Description: Infineon IRFS4310ZTRLPBF N-channel MOSFET, 127 A, 100 V HEXFET, 3-Pin D2PAK

Download IRFS4310ZTRLPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IRFS4310ZTRLPBF - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IRFS4310ZTRLPBF Details

  • Manufacturer Part Number:

    IRFS4310ZTRLPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Mainland China, Taiwan, UK

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    130 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.006 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    560 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFS4310ZTRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFS4310ZTRLPBF is -55°C to 175°C.
  • To ensure reliability, follow the recommended assembly and soldering guidelines, and ensure proper thermal management. Additionally, consider using a thermal interface material to improve heat dissipation.
  • To minimize EMI, use a multi-layer PCB with a solid ground plane, and keep the power and signal traces as short as possible. Also, use a shielded cable or a ferrite bead to filter out high-frequency noise.
  • Yes, the IRFS4310ZTRLPBF is rated for high-voltage applications up to 500V. However, ensure that the device is properly derated for the specific application, and follow the recommended design guidelines for high-voltage circuits.
  • To troubleshoot issues, check the device's thermal performance, ensure proper PCB layout and assembly, and verify the input and output voltage levels. Also, use a thermal camera or an oscilloscope to monitor the device's temperature and voltage waveforms.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IRFS4310ZTRLPBF Overview

Use the download button to access the IRFS4310ZTRLPBF 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFS4, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFS4310ZTRLPBF

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

IRFS4310ZTRLPBF Alternates

Showing results

Image Part Number Model
Part Image AUIRFS4310ZTRR International Rectifier

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRFS4310ZTRRPBF International Rectifier

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRFS4310ZPBF International Rectifier

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image AUIRFS4310ZTRL Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image AUIRFS4310Z Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for IRFS4310ZTRLPBF, check out Findchips.com