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MJD200RLG - onsemi

Description: Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ I C = 500 mAdc = 0.75 Vdc (Max

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MJD200RLG - onsemi - PCB symbol
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MJD200RLG - onsemi PCB footprint - Other - Other - MJD200RLG-2
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MJD200RLG Details

  • Manufacturer Part Number:

    MJD200RLG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    25 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    13 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    65 MHz

MJD200RLG Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2 oz copper thickness is recommended. Additionally, thermal vias can be used to improve heat dissipation.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink if necessary, and ensure good thermal contact between the device and the heat sink. Monitor the device's junction temperature to prevent overheating.
  • A gate drive circuit with a low impedance output stage and a high current capability is recommended. A gate resistor (Rg) value between 10 ohms and 100 ohms is typical. A bootstrap capacitor (Cb) value between 10 nF and 100 nF is also recommended.
  • Latch-up can be prevented by ensuring that the device is operated within the recommended voltage and current ranges. Avoid exceeding the maximum ratings for voltage, current, and power dissipation. Use a latch-up protection circuit if necessary.
  • Use a human body model (HBM) ESD protection circuit with a minimum of 2 kV rating. A diode array or a transient voltage suppressor (TVS) can be used to protect the device from ESD events.

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MJD200RLG Overview

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