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NTJD5121NT1G - onsemi

Description: Leading Edge Trench Technology for Low RDS(on) ; Low Gate Threshold; Low Input Capacitance; ESD Protected Gate; AEC−Q101 Qualified

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PCB Footprints
NTJD5121NT1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-88(SOT-363) CASE 419B-02 ISSUE Y
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3D Models
NTJD5121NT1G - onsemi  - 3D model - SOT23 (6-Pin) - SC-88(SOT-363) CASE 419B-02 ISSUE Y
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NTJD5121NT1G Details

  • Manufacturer Part Number:

    NTJD5121NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Package Description:

    SC-88, SC-70, SOT-363, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.295 A

  • Drain-source On Resistance-Max:

    1.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.5 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTJD5121NT1G Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current ranges, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer.
  • Exceeding the maximum Tj rating can lead to reduced device lifespan, increased thermal resistance, and potentially catastrophic failure. Ensure that the device is operated within the recommended temperature range to prevent overheating.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to prevent damage from electrostatic discharge. Follow proper handling and storage procedures to minimize ESD exposure.
  • Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 60s max. For rework, use a low-temperature soldering iron (350°C max) and avoid applying excessive force or heat to the device.

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NTJD5121NT1G Overview

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Part Image NTJD5121NT2G onsemi

Small Signal Field-Effect Transistor, 0.295A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET