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NTJD5121NT2G - onsemi

Description: Leading Edge Trench Technology for Low RDS(on) ; Low Gate Threshold; Low Input Capacitance; ESD Protected Gate; AEC−Q101 Qualified

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Symbol
NTJD5121NT2G - onsemi - PCB symbol
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PCB Footprints
NTJD5121NT2G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC−88/SC70−6/SOT−363
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3D Models
NTJD5121NT2G - onsemi - 3D model - SOT23 (6-Pin) - SC−88/SC70−6/SOT−363
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NTJD5121NT2G Details

  • Manufacturer Part Number:

    NTJD5121NT2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Package Description:

    SC-88, SC-70, SOT-363, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.295 A

  • Drain-source On Resistance-Max:

    1.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.5 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTJD5121NT2G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current limits, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer.
  • The high current handling capability of the NTJD5121NT2G requires careful PCB design to ensure that the traces and vias can handle the high currents. Use wide traces, multiple vias, and a solid power plane to minimize resistance and inductance.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins. Also, ensure that the PCB is designed with ESD protection in mind, including the use of ESD-safe handling and storage procedures.
  • When paralleling multiple devices, ensure that each device has its own current sense resistor and that the devices are matched for optimal current sharing. Also, consider the impact of paralleling on the overall system reliability and fault tolerance.

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NTJD5121NT2G Overview

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NTJD5121NT2G Alternates

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Part Image NTJD5121NT1G onsemi

Small Signal Field-Effect Transistor, 0.295A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET