Part Image

SI2318CDS-T1-BE3 - Vishay

Description: MOSFET N-CHANNEL 40-V (D-S)

Download SI2318CDS-T1-BE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI2318CDS-T1-BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SI2318CDS-T1-BE3
click to zoom
3D Models
SI2318CDS-T1-BE3 - Vishay  - 3D model - SOT23 (3-Pin) - SI2318CDS-T1-BE3
click to zoom

SI2318CDS-T1-BE3 Details

  • Manufacturer Part Number:

    SI2318CDS-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    5.6 A

  • Drain-source On Resistance-Max:

    0.042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2318CDS-T1-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2318CDS-T1-BE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note AN81193.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, ensure that the device is operated within the recommended operating temperature range of -55°C to 150°C, and that the maximum junction temperature (Tj) is not exceeded.
  • The maximum allowed voltage on the input pins of the SI2318CDS-T1-BE3 is 5.5V. Exceeding this voltage may cause damage to the device.
  • To prevent electrostatic discharge (ESD) damage, it is recommended to handle the SI2318CDS-T1-BE3 with ESD-protective equipment, such as wrist straps, mats, and bags. Additionally, ensure that the device is stored in a static-protective package when not in use.
  • The recommended soldering profile for the SI2318CDS-T1-BE3 is a peak temperature of 260°C for 10 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s. Refer to the Vishay Intertechnologies' application note AN81193 for more information.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI2318CDS-T1-BE3 Overview

Use the download button to access the SI2318CDS-T1-BE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI231, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI2318CDS-T1-BE3

Showing 0 results

SI2318CDS-T1-BE3 Alternates

Showing results

Image Part Number Model
Part Image SI2318CDS-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 5.6A I(D), 40V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2318DS-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 3A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB