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SI2318CDS-T1-GE3 - Vishay

Description: Vishay SI2318CDS-T1-GE3 N-channel MOSFET Transistor, 5.6 A, 40 V, 3-Pin SOT-23

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Symbol
SI2318CDS-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI2318CDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2318CDS-T1-GE3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2318CDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2318CDS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    5.6 A

  • Drain-source On Resistance-Max:

    0.042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2318CDS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2318CDS-T1-GE3 is a standard SOIC-8 package with a 1.27mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
  • To ensure reliability in high-temperature applications, ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Additionally, follow proper PCB design and thermal management practices, such as providing adequate heat dissipation and minimizing thermal resistance.
  • The maximum allowed voltage on the enable pin (EN) of the SI2318CDS-T1-GE3 is 6V. Exceeding this voltage may damage the device or affect its performance.
  • Yes, the SI2318CDS-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly bypassed and decoupled to minimize electromagnetic interference (EMI) and ensure reliable operation.
  • To troubleshoot issues with the SI2318CDS-T1-GE3, follow a systematic approach: 1) Verify the power supply voltage and ensure it is within the recommended range. 2) Check the input and output voltage levels. 3) Verify the enable pin (EN) is properly driven. 4) Check for any signs of overheating or thermal issues. 5) Consult the datasheet and application notes for guidance on troubleshooting and fault diagnosis.

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SI2318CDS-T1-GE3 Overview

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SI2318CDS-T1-GE3 Alternates

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Part Image SI2318DS-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 3A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Part Image SI2318CDS-T1-BE3 Vishay Intertechnologies

Power Field-Effect Transistor, 5.6A I(D), 40V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB