DRAMs||SRAMs||Other Memory ICs Footprint, Symbol and 3D Model search results

Showing 25 of 597251 results

Price & Stock Powered by

Filter by Manufacturer

Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	7143SA20G Renesas Electronics	1	The 7143 is a high-speed 2K x 16 Dual-Port Static RAMs. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 32-bit-or-wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7143SA20G	3D model available Symbol and footprint available 3	1 Download Model
	71V416L12BEG Renesas Electronics	1	The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	BGA	71V416L12BEG	3D model available Symbol and footprint available 3	1 Download Model
	70V657S12BF Renesas Electronics	1	The 70V657 is a high-speed 32K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each por	BGA	70V657S12BF	3D model available Symbol and footprint available 3	1 Download Model
	71V3556SA166BGGI8 Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	71V3556SA166BGGI8	3D model available Symbol and footprint available 3	1 Download Model

	5962-8866204NA Renesas Electronics	1	The 5962-88662 (71256 SRAM) is organized as 32K x 8. This part offers a reduced power standby mode for significant system level power and cooling savings. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Ceramic Dual-In-Line Packages	5962-8866204NA	3D model not available Symbol and footprint available 2	1 Download Model
	71V424L10PHGI Renesas Electronics	1	The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Small Outline Packages	71V424L10PHGI	3D model available Symbol and footprint available 3	1 Download Model
	71V416L12PHGI Renesas Electronics	1	The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Small Outline Packages	71V416L12PHGI	3D model available Symbol and footprint available 3	1 Download Model
	71V3577S75BQ8 Renesas Electronics	1	The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V3577S75BQ8	3D model available Symbol and footprint available 3	1 Download Model
	71V256SA20PZG8 Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V256SA20PZG8	3D model available Symbol and footprint available 3	1 Download Model
	R1LV1616RSA-7SR#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered.	Small Outline Packages	R1LV1616RSA-7SR#B0	3D model available Symbol and footprint available 3	1 Download Model
	70V3569S5BC8 Renesas Electronics	1	The 70V3569 is a high-speed 16K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3569 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3569S5BC8	3D model available Symbol and footprint available 3	1 Download Model
	70V3379S5BC Renesas Electronics	1	The 70V3379 is a high-speed 32K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3379 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3379S5BC	3D model available Symbol and footprint available 3	1 Download Model
	70T633S10BFI8 Renesas Electronics	1	The 70T633 is a high-speed 512K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70T633S10BFI8	3D model available Symbol and footprint available 3	1 Download Model
	71V65703S85BQGI Renesas Electronics	1	The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V65703S85BQGI	3D model not available Symbol and footprint available 2	1 Download Model
	R1LV3216RSA-5SI#B1 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered.	Small Outline Packages	R1LV3216RSA-5SI#B1	3D model available Symbol and footprint available 3	1 Download Model

	70V3379S4BF8 Renesas Electronics	1	The 70V3379 is a high-speed 32K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3379 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3379S4BF8	3D model available Symbol and footprint available 3	1 Download Model
	71V424S15PHGI8 Renesas Electronics	1	The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Small Outline Packages	71V424S15PHGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V632S7PFG Renesas Electronics	1	The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V632S7PFG	3D model available Symbol and footprint available 3	1 Download Model
	70T3339S133BF Renesas Electronics	1	The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	70T3339S133BF	3D model available Symbol and footprint available 3	1 Download Model
	RMQS2A1818DGBA-332#AC0 Renesas Electronics	1	The RMQS2A1836DGBA is a 524, 288-word by 36-bit and the RMQS2A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed	BGA	RMQS2A1818DGBA-332#AC0	3D model available Symbol and footprint available 3	1 Download Model
	709349L7PFGI8 Renesas Electronics	1	The 709349 is a high-speed 4K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	709349L7PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	70V7339S166BF8 Renesas Electronics	1	The 70V7339 is a high-speed 512K x 18 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 8K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 8K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70V7339S166BF8	3D model available Symbol and footprint available 3	1 Download Model
	71V3556SA100BQI Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	71V3556SA100BQI	3D model available Symbol and footprint available 3	1 Download Model
	RMQS3A3618DGBA-302#AC0 Renesas Electronics	1	The RMQS3A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS3A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	RMQS3A3618DGBA-302#AC0	3D model available Symbol and footprint available 3	1 Download Model
	7130LA100PDG Renesas Electronics	1	The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535	Dual-In-Line Packages	7130LA100PDG	3D model available Symbol and footprint available 3	1 Download Model
15 16 17 18 19 20 21 22 23

Can't find what you're looking for? Request this part

DRAMs||SRAMs||Other Memory ICs Model Download Search Results

Popular SRAMs