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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	M48Z58-70PC1 STMicroelectronics	1	STMicroelectronics SRAM, M48Z58-70PC1- 64kbit	Dual-In-Line Packages	M48Z58-70PC1	3D model available Symbol and footprint available 3	1 Download Model
	71T75802S133BG8 Renesas Electronics	1	The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers.	BGA	71T75802S133BG8	3D model available Symbol and footprint available 3	1 Download Model
	71T75902S85BGG Renesas Electronics	1	The 71T75902 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround.	BGA	71T75902S85BGG	3D model available Symbol and footprint available 3	1 Download Model
	5962-3829417MXA Renesas Electronics	1	The 5962-38294 (7164 SRAM) is organized as 8K x 8 and offers a reduced power standby mode. The low-power version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.	Ceramic Dual-In-Line Packages	5962-3829417MXA	3D model not available Symbol and footprint available 2	1 Download Model

	71V65603S133PFGI Renesas Electronics	1	The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V65603S133PFGI	3D model available Symbol and footprint available 3	1 Download Model
	71V016SA10YG Renesas Electronics	1	The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71V016SA10YG	3D model available Symbol and footprint available 3	1 Download Model
	RMWV6416AGSD-5S2#AA0 Renesas Electronics	1	The RMWV6416A Series is a family of 64-Mbit static RAMs organized 4, 194, 304-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMWV6416A Series has realized higher density, higher performance and low power consumption. The RMWV6416A Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 48pin TSOP (I), 52pin TSOP (II) or 48-ball fine pitch ball grid array.	Small Outline Packages	RMWV6416AGSD-5S2#AA0	3D model available Symbol and footprint available 3	1 Download Model
	70V9289L9PFGI8 Renesas Electronics	1	The 70V9289 is a high-speed 64K x 16-bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70V9289L9PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	7164S25TPG Renesas Electronics	1	The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Dual-In-Line Packages	7164S25TPG	3D model available Symbol and footprint available 3	1 Download Model
	RMLV0408EGSP-4S2#CA0 Renesas Electronics	1	The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524, 288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher performance and low power consumption. The RMLV0408E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 32-pin SOP, 32-pin TSOP (II) or 32-pin sTSOP.	Small Outline Packages	RMLV0408EGSP-4S2#CA0	3D model available Symbol and footprint available 3	1 Download Model
	7164S85TDB Renesas Electronics	1	The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Ceramic Dual-In-Line Packages	7164S85TDB	3D model not available Symbol and footprint available 2	1 Download Model
	71V25761S200PFG Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V25761S200PFG	3D model available Symbol and footprint available 3	1 Download Model
	70V657S15BC Renesas Electronics	1	The 70V657 is a high-speed 32K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each por	BGA	70V657S15BC	3D model available Symbol and footprint available 3	1 Download Model
	70T659S15BC8 Renesas Electronics	1	The 70T659 is a high-speed 128K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70T659S15BC8	3D model available Symbol and footprint available 3	1 Download Model
	71V3576S150PFG Renesas Electronics	1	The 71V3576 3.3V CMOS SRAM is organized as 128K x 36. The 71V3576 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V3576S150PFG	3D model available Symbol and footprint available 3	1 Download Model

	71321LA20JG8 Renesas Electronics	1	The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta	Plastic Leaded Chip Carrier	71321LA20JG8	3D model not available Symbol and footprint available 2	1 Download Model
	71V67803S150PFGI8 Renesas Electronics	1	The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V67803S150PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	R1WV6416RBG-5SI#S0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered.	BGA	R1WV6416RBG-5SI#S0	3D model available Symbol and footprint available 3	1 Download Model
	5962-8700212ZA Renesas Electronics	0	The 5962-87002 (IDT 7132/42) is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with a "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with M	Ceramic Dual-In-Line Packages	5962-8700212ZA	3D model not available Symbol and footprint available 2	1 Download Model
	7164S20YG8 Renesas Electronics	1	The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Other	7164S20YG8	3D model available Symbol and footprint available 3	1 Download Model
	5962-8855201UA Renesas Electronics	1	The 5962-88552 (71256 SRAM) is organized as 32K x 8. This part offers a reduced power standby mode for significant system level power and cooling savings. It also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Ceramic Dual-In-Line Packages	5962-8855201UA	3D model not available Symbol and footprint available 2	1 Download Model
	7006L15PFG Renesas Electronics	1	The 7006 is a high-speed 16K x 8 Dual-Port Static RAM designed to be used as a stand-alone 128K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Quad Flat Packages	7006L15PFG	3D model available Symbol and footprint available 3	1 Download Model
	70T3319S133BF Renesas Electronics	1	The 70T3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	70T3319S133BF	3D model available Symbol and footprint available 3	1 Download Model
	71V3577S80BQI8 Renesas Electronics	1	The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V3577S80BQI8	3D model available Symbol and footprint available 3	1 Download Model
	71T75902S75BGG8 Renesas Electronics	1	The 71T75902 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround.	BGA	71T75902S75BGG8	3D model available Symbol and footprint available 3	1 Download Model
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