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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	7164S20YG8 Renesas Electronics	1	The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Other	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	7140LA35CB Renesas Electronics	1	The 7140 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a "SLAVE" Dual-Port RAM together with the 7130 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Ceramic Dual-In-Line Packages	Check Price & Stock	3D model not available Symbol and footprint available 2	1 Download Model
	R1WV6416RSD-5SI#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered.	Small Outline Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	5962-8866201NA Renesas Electronics	1	The 5962-88662 (71256 SRAM) is organized as 32K x 8. This part offers a reduced power standby mode for significant system level power and cooling savings. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Ceramic Dual-In-Line Packages	Check Price & Stock	3D model not available Symbol and footprint available 2	1 Download Model

	R1QDA4436RBG-18IB0 Renesas Electronics	1	The R1QDA4436RBG is a 4, 194, 304-word by 36-bit and the R1QDA4418RBG is a 8, 388, 608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed,	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	6116SA55DB Renesas Electronics	1	The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Dual-In-Line Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	7142SA35C Renesas Electronics	1	The 7142 is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a "SLAVE" Dual-Port RAM together with the 7132 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Ceramic Dual-In-Line Packages	Check Price & Stock	3D model not available Symbol and footprint available 2	1 Download Model
	7164S20DB Renesas Electronics	1	The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Ceramic Dual-In-Line Packages	Check Price & Stock	3D model not available Symbol and footprint available 2	1 Download Model
	7005S55GB Renesas Electronics	1	The 7005 is a high-speed 8K x 8 Dual-Port Static RAM designed to be used as a stand-alone 64K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	71V3578S133PFGI8 Renesas Electronics	1	The 71V3578 3.3V CMOS SRAM is organized as 256K x 18. The 71V3578 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	71V65603S133BQGI Renesas Electronics	1	The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	70V659S12BFI8 Renesas Electronics	1	The 70V659 is a high-speed 128K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	70V9289L9PFGI8 Renesas Electronics	1	The 70V9289 is a high-speed 64K x 16-bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	71V3557S80PFG Renesas Electronics	1	The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).	Quad Flat Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	70T3319S133BF Renesas Electronics	1	The 70T3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model

	71V25761S200PFG Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	71V3556SA133BGGI Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	71V3577S80BQI8 Renesas Electronics	1	The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	R1LV0108ESN-5SI#S1 Renesas Electronics	1	The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131, 072-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV0108E Series has realized higher density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP, 32-pin TSOP and 32-pin sTSOP.	Small Outline Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	6116LA20SOGI Renesas Electronics	1	The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Small Outline Packages	Check Price & Stock	3D model not available Symbol and footprint available 2	1 Download Model
	70V7339S133BCI Renesas Electronics	1	The 70V7339 is a high-speed 512K x 18 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 8K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 8K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	70V659S12BC Renesas Electronics	1	The 70V659 is a high-speed 128K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	70T3589S200BC8 Renesas Electronics	1	The 70T3589 is a high-speed 64K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3589 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	71V65603S100PFG8 Renesas Electronics	1	The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	70T3319S133BF8 Renesas Electronics	1	The 70T3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
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