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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	M48Z02-70PC1 STMicroelectronics	1	STMicroelectronics M48Z02-70PC1 NVRAM, 16kbit, 70ns, 5V 24-Pin PCDIP	Dual-In-Line Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	71V35761SA183BGG8 Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	70V3379S4PRFG Renesas Electronics	1	The 70V3379 is a high-speed 32K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3379 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	Quad Flat Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	7140LA20JG Renesas Electronics	1	The 7140 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a "SLAVE" Dual-Port RAM together with the 7130 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Plastic Leaded Chip Carrier	Check Price & Stock	3D model not available Symbol and footprint available 2	1 Download Model

	R1QBA7218ABB-20IB0 Renesas Electronics	1	The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	71V124SA12YG8 Renesas Electronics	1	The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	6116SA45DB Renesas Electronics	1	The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Dual-In-Line Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	71V3559S85PFG8 Renesas Electronics	1	The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).	Quad Flat Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	70T3399S166BC Renesas Electronics	1	The 70T3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	RMLV0416EGSB-4S2#AA1 Renesas Electronics	1	The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262, 144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher performance and low power consumption. The RMLV0416E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II) or 48-ball fine pitch ball grid array.	Small Outline Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	71V2546S133BG8 Renesas Electronics	1	The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	70V659S12DRGI Renesas Electronics	1	The 70V659 is a high-speed 128K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po	Quad Flat Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	70T3509MS133BPI Renesas Electronics	1	The 70T3509M is a high-speed 1024K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3509M can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	70V639S12BCI Renesas Electronics	1	The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	70T3519S133BFI Renesas Electronics	1	The 70T3519 is a high-speed 256K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3519 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model

	71V2556S150PFG8 Renesas Electronics	1	The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	70T3589S133BF8 Renesas Electronics	1	The 70T3589 is a high-speed 64K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3589 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	70261L15PFG8 Renesas Electronics	1	The 70261 is a high-speed 16K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	7038L20PFGI Renesas Electronics	1	The 7038 is a high-speed 64K x 18 Dual-Port Static RAM designed to be used as a stand-alone 1152K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 36-bit or more word systems. This MASTER/SLAVE approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by Chip Enable (CE) permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	7008L25G Renesas Electronics	1	The 7008 is a high-speed 64K x 8 Dual-Port Static RAM designed to be used as a stand-alone 512K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Other	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	RMQS3A1836DGBA-302#AC0 Renesas Electronics	1	The RMQS3A1836DGBA is a 524, 288-word by 36-bit and the RMQS3A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed	BGA	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	71V67903S85PFG Renesas Electronics	1	The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	7024S70GB Renesas Electronics	1	The 7024 is a high-speed 4Kx 16 Dual-Port Static RAM designed to be used as a stand-alone 64K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or more word systems. An automatic power down feature controlled by Chip Enable (CE) permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	7132LA55PDGI Renesas Electronics	1	The 7132 is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7142 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535	Dual-In-Line Packages	Check Price & Stock	3D model available Symbol and footprint available 3	1 Download Model
	RMQS3A3636DGBA-302#AC0 Renesas Electronics	1	The RMQS3A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS3A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	Check Price & Stock	3D model not available Symbol and footprint available 2	1 Download Model
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