380-R Model Download Search Results
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TLP741
Toshiba
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1 | TLP741G TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor TLP741G Office Machine Household Use Equipment Solid State R | Dual-In-Line Packages | TLP741 |
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SS496B-T2
Honeywell
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1 | Board Mount Hall Effect / Magnetic Sensors Flat TO-92, 4.5Vdc R atiometric, PCB | Other | SS496B-T2 |
3
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70551-0004
Molex
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1 | Headers & Wire Housings SL R/A Latch Hdr /Sp r /Split Pg Tin 5Ckt | Other | 70551-0004 |
3
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53259-0429
Molex
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1 | Headers & Wire Housings 3.5 WtB Wafer Assy R B Wafer Assy RA 4Ckt | Other | 53259-0429 |
3
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70287-1120
Molex
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1 | Headers & Wire Housings CGrid Bkwy Hdr DR Rt R RtPn 15''SAu 48Ckt | Other | 70287-1120 |
3
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TLC2272QPWRG4Q1
Texas Instruments
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1 | Operational Amplifiers - Op Amps Dual Low-Noise R to R Op Amp | Small Outline Packages | TLC2272QPWRG4Q1 |
3
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TAJR475M006RNJ
Kyocera AVX
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1 | AVX - TAJR475M006RNJ - CAP, TANTALUM, 4.7UF, 6V, CASE R | Capacitor Moulded Polarised | TAJR475M006RNJ |
3
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Z0110MN5AA4
STMicroelectronics
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1 | (1) ITM = 1.4 A, tp = 380 µs 25 °C Max. 1.60 V | SOT223 (3-Pin) | Z0110MN5AA4 |
3
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LFE3-70EA-7FN672I
Lattice Semiconductor
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1 | FPGA - Field Programmable Gate Array 66.5K LUTs 380 I/O SERDES1.2V -7Spd IND | BGA | LFE3-70EA-7FN672I |
3
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LFE3-150EA-6FN672I
Lattice Semiconductor
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1 | FPGA - Field Programmable Gate Array 149K LUTs 380 I/O 1.2V -6 Speed IND | BGA | LFE3-150EA-6FN672I |
3
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BPV10
Vishay
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1 | Photodiodes T-1.75 380 to1100nm +/-20 deg , 920nM , 1nA , 215mW , -40C +100C | Other | BPV10 |
3
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09734647801
HARTING
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1 | DIN 41612 Connectors DIN-Signal R 064FS-3,0C1-3-clip | Other | 09734647801 |
3
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09732966801
HARTING
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1 | DIN R female angled, 96pin, PL2 | Other | 09732966801 |
3
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ATFC-0402-3N2B-T
ABRACON
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1 | 3.2 nH Unshielded Thin Film Inductor 380 mA 450mOhm Max 0402 (1005 Metric) | Inductors Chip | ATFC-0402-3N2B-T |
3
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IRLS3034-7PPBF
Infineon
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1 | MOSFET N-Channel 40V 380A HEXFET D2PAK-7 International Rectifier IRLS3034-7PPBF N-channel MOSFET Transistor, 380 A, 40 V, 7-Pin D2PAK | Other | IRLS3034-7PPBF |
2
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HMC534LP5
Analog Devices
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1 | VCO SMT with Fo/2 & Divide-by-4, 10.6 - 11.8 GHz ,-110 dBc/Hz @100 kHz Typ,12 V, 380 mA | Quad Flat No-Lead | HMC534LP5 |
3
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STF11NM80
STMicroelectronics
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1 | N-channel 800 V, 380 mΩ typ., 11 A MDmesh Power MOSFETs in D²PAK, TO-220FP, I²PAK, TO-220 and TO-247 packages | Transistor Outline, Vertical | STF11NM80 |
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RM322-122-202-5500
Molex
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1 | Rectangular MIL Spec Connectors CONNECTOR, R SERIES | Other | RM322-122-202-5500 |
3
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CSD17556Q5B
Texas Instruments
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1 | MOSFETs 30V N-Ch NexFET Powe r MOSFETs A 595-CSD17556Q5BT | Other | CSD17556Q5B |
3
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TLC2254AQPWRG4Q1
Texas Instruments
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1 | Operational Amplifiers - Op Amps R to R Quad Op Amp | Small Outline Packages | TLC2254AQPWRG4Q1 |
3
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LDP35CARL
STMicroelectronics
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1 | STMicroelectronics LDP35CARL Bi-Directional TVS Diode, 5W peak, 2-Pin R 6 | Diodes, Axial Diameter Horizontal Mounting | LDP35CARL |
3
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09734967801
HARTING
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1 | DIN R female angled, 96pin, w/ board locks, PL3 | Other | 09734967801 |
3
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AISM-1812-2R2K-T
ABRACON
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1 | 2.2 µH Unshielded Drum Core, Wirewound Inductor 380 mA 700mOhm Max 1812 (4532 Metric) | Inductors Precision Moulded | AISM-1812-2R2K-T |
3
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AISM-1812-2R2K
ABRACON
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1 | 2.2 µH Unshielded Drum Core, Wirewound Inductor 380 mA 700mOhm Max 1812 (4532 Metric) | Inductors Precision Moulded | AISM-1812-2R2K |
3
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LQH2HNH1R5K03L
Murata Electronics
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1 | 1.5 µH Shielded Drum Core, Wirewound Inductor 380 mA 1008 (2520 Metric) | Other | LQH2HNH1R5K03L |
3
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![Part Image](["https://componentsearchengine.com/2D/0T/12747535.1.1.png",null,null])
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