Showing 25 of 2009 results
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TMS-112-56-SM-S
SAMTEC
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1 | 12 Position, Single-Row .050" x .100" Micro Terminal Strip | Other | TMS-112-56-SM-S |
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71256SA25PZGI8
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA25PZGI8 |
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R5F21256SDFP#V2
Renesas Electronics
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1 | The R8C/25 Group is supported only for customers who have already adopted these products. The RL78/G14 Group is recommended for new designs.These MCUs are fabricated using a high-performance silicon gate CMOS process, embedding the R8C/Tiny Series CPU core, and are packaged in a 52-pin molded-plastic LQFP or a 64-pin molded-plastic FLGA. It implements sophisticated instructions for a high level of instruction efficiency. With 1Mb of address space, they are capable of executing instructions at high speed. Fu | Quad Flat Packages | R5F21256SDFP#V2 |
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71256SA25YG
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA25YG |
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71256S25TDB
Renesas Electronics
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1 | The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 71256S25TDB |
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71256SA15TPG
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Dual-In-Line Packages | 71256SA15TPG |
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71256SA20YG
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA20YG |
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71256S85DB
Renesas Electronics
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1 | The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 71256S85DB |
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71256S85TDB
Renesas Electronics
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1 | The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 71256S85TDB |
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71256SA20PZG
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA20PZG |
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71256S100TDB
Renesas Electronics
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1 | The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 71256S100TDB |
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71256SA12YG8
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA12YG8 |
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71256SA20TPGI
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Dual-In-Line Packages | 71256SA20TPGI |
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71256S55DB
Renesas Electronics
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1 | The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 71256S55DB |
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71256S45TDB
Renesas Electronics
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1 | The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 71256S45TDB |
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R5F21256SNLG#U0
Renesas Electronics
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1 | The R8C/25 Group is supported only for customers who have already adopted these products. The RL78/G14 Group is recommended for new designs.These MCUs are fabricated using a high-performance silicon gate CMOS process, embedding the R8C/Tiny Series CPU core, and are packaged in a 52-pin molded-plastic LQFP or a 64-pin molded-plastic FLGA. It implements sophisticated instructions for a high level of instruction efficiency. With 1Mb of address space, they are capable of executing instructions at high speed. Fu | BGA | R5F21256SNLG#U0 |
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SL21THR11256S
Fischer Elektronik GmbH & Co. KG
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1 | male header | Other | SL21THR11256S |
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71256S55TDB
Renesas Electronics
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1 | The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 71256S55TDB |
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71256SA20PZGI
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA20PZGI |
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71256S25DB
Renesas Electronics
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1 | The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 71256S25DB |
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71256SA12PZG
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA12PZG |
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71256SA15PZGI
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA15PZGI |
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R5F21256SDFP#U0
Renesas Electronics
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1 | IC MCU 16BIT 32KB FLASH 52LQFP | Quad Flat Packages | R5F21256SDFP#U0 |
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R5F21256SNFP#ES
Renesas Electronics
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1 | IC MCU 16BIT 32KB FLASH 52LQFP | Quad Flat Packages | R5F21256SNFP#ES |
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TPS81256SIPR
Texas Instruments
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1 | Integrated Power Solution, 3W High-Efficiency boost converter module in MicroSiP package | BGA | TPS81256SIPR |
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