1256S Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 12 Position, Single-Row .050" x .100" Micro Terminal Strip Other TMS-112-56-SM-S 1 Download Model
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71256SA25PZGI8 Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71256SA25PZGI8 1 Download Model
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R5F21256SDFP#V2 Renesas Electronics
1 The R8C/25 Group is supported only for customers who have already adopted these products. The RL78/G14 Group is recommended for new designs.These MCUs are fabricated using a high-performance silicon gate CMOS process, embedding the R8C/Tiny Series CPU core, and are packaged in a 52-pin molded-plastic LQFP or a 64-pin molded-plastic FLGA. It implements sophisticated instructions for a high level of instruction efficiency. With 1Mb of address space, they are capable of executing instructions at high speed. Fu Quad Flat Packages R5F21256SDFP#V2 1 Download Model
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71256SA25YG Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71256SA25YG 1 Download Model
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71256S25TDB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S25TDB 1 Download Model
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71256SA15TPG Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Dual-In-Line Packages 71256SA15TPG 1 Download Model
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71256SA20YG Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71256SA20YG 1 Download Model
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71256S85DB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S85DB 1 Download Model
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71256S85TDB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S85TDB 1 Download Model
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71256SA20PZG Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71256SA20PZG 1 Download Model
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71256S100TDB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S100TDB 1 Download Model
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71256SA12YG8 Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71256SA12YG8 1 Download Model
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71256SA20TPGI Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Dual-In-Line Packages 71256SA20TPGI 1 Download Model
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71256S55DB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S55DB 1 Download Model
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71256S45TDB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S45TDB 1 Download Model
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R5F21256SNLG#U0 Renesas Electronics
1 The R8C/25 Group is supported only for customers who have already adopted these products. The RL78/G14 Group is recommended for new designs.These MCUs are fabricated using a high-performance silicon gate CMOS process, embedding the R8C/Tiny Series CPU core, and are packaged in a 52-pin molded-plastic LQFP or a 64-pin molded-plastic FLGA. It implements sophisticated instructions for a high level of instruction efficiency. With 1Mb of address space, they are capable of executing instructions at high speed. Fu BGA R5F21256SNLG#U0 1 Download Model
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SL21THR11256S Fischer Elektronik GmbH & Co. KG
1 male header Other SL21THR11256S 1 Download Model
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71256S55TDB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S55TDB 1 Download Model
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71256SA20PZGI Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71256SA20PZGI 1 Download Model
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71256S25DB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S25DB 1 Download Model
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71256SA12PZG Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71256SA12PZG 1 Download Model
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71256SA15PZGI Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71256SA15PZGI 1 Download Model
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R5F21256SDFP#U0 Renesas Electronics
1 IC MCU 16BIT 32KB FLASH 52LQFP Quad Flat Packages R5F21256SDFP#U0 1 Download Model
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R5F21256SNFP#ES Renesas Electronics
1 IC MCU 16BIT 32KB FLASH 52LQFP Quad Flat Packages R5F21256SNFP#ES 1 Download Model
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TPS81256SIPR Texas Instruments
1 Integrated Power Solution, 3W High-Efficiency boost converter module in MicroSiP™ package BGA TPS81256SIPR 1 Download Model
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