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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	CY14B116L-ZS25XI Infineon	1	NVSRAM (Non-Volatile SRAM) Memory IC 16Mbit Parallel 25 ns 44-TSOP II	Small Outline Packages	CY14B116L-ZS25XI	3D model available Symbol and footprint available 3	1 Download Model
	GS832018AGT-150 GSI TECHNOLOGY	1	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs	Quad Flat Packages	GS832018AGT-150	3D model available Symbol and footprint available 3	1 Download Model
	AS7C1024B-12TCN Alliance Memory	1	Industrial and commercial temperatures Organization: 131,072 words x 8 bits High speed 10/12/15/20 ns address access time 5/6/7/8 ns output enable access time Low power consumption: ACTIVE 605 mW / max @ 10 ns Low power consumption: STANDBY 55 mW / max CMOS Easy memory expansion with CE1, CE2, OE inputs TTL/LVTTL-compatible, three-state I/O32-pin JEDEC standard packages	Small Outline Packages	AS7C1024B-12TCN	3D model available Symbol and footprint available 3	1 Download Model
	AS7C34096A-10TIN Alliance Memory	1	SRAM SRAM, 4Mb, 512K x 8, 3.3V, 44pin TSOP II, 10ns, Industrial Temp - Tray	Small Outline Packages	AS7C34096A-10TIN	3D model available Symbol and footprint available 3	1 Download Model

	AS6C6264-55SCNTR Alliance Memory	1	SRAM 64K, 2.7-5.5V, 55ns 8K x 8 Asynch SRAM	Small Outline Packages	AS6C6264-55SCNTR	3D model available Symbol and footprint available 3	1 Download Model
	IS61WV102416FALL-20BLI Integrated Silicon Solution Inc.	1	SRAM 16Mb,High-Speed,Async,1Mbx16, 20ns, 1.65v-2.2v, 48 Ball mBGA (6x8 mm), RoHS	BGA	IS61WV102416FALL-20BLI	3D model available Symbol and footprint available 3	1 Download Model
	IS61WV3216DBLL-10TLI Integrated Silicon Solution Inc.	1	HIGHtSPEED: (IS61/64WV3216DBLL)• High-speed access time: 8, 10, 12, 20 ns• Low Active Power: 135 mW (typical)• Low Standby Power: 12 µW (typical)CMOS standbyLOWtPOWER:t(IS61/64WV3216DBLS)• High-speed access time: 25, 35 ns• Low Active Power: 55 mW (typical)• Low Standby Power: 12 µW (typical)CMOS standby• Singletpowertsupply—ttVddt2.4Vttot3.6V• Fully static operation: no clock or refreshrequired• Three state outputs• Data control for upper and lower bytes• Industrial and Auto	Small Outline Packages	IS61WV3216DBLL-10TLI	3D model available Symbol and footprint available 3	1 Download Model
	IDT7008L15JG Renesas Electronics	1	IDT SRAM Memory, IDT7008L15JG- 512kbit	Plastic Leaded Chip Carrier	IDT7008L15JG	3D model not available Symbol and footprint available 2	1 Download Model
	IS61WV102416ALL-20MLI Integrated Silicon Solution Inc.	1	SRAM 16Mb,High-Speed,Async,1Mbx16,20ns/1.65v-2.2v, 48 Ball mBGA (9x11 mm), RoHS	BGA	IS61WV102416ALL-20MLI	3D model available Symbol and footprint available 3	1 Download Model
	R1LP0108ESN-5SI#S0 Renesas Electronics	1	Low Power SRAM	Small Outline Packages	R1LP0108ESN-5SI#S0	3D model available Symbol and footprint available 3	1 Download Model
	IS62WV25616EBLL-45TLI-TR Integrated Silicon Solution Inc.	1	SRAM 4Mb, Low Power/Power Saver,Async,256K x 16,45ns,2.2v~3.6v,44 Pin TSOP II, RoHS	Small Outline Packages	IS62WV25616EBLL-45TLI-TR	3D model available Symbol and footprint available 3	1 Download Model
	APS6404L-3SQR-SN AP Memory	1	DRAM IoT RAM 64Mb QSPI (x1,x4) SDR 133/84MHz, RBX, 3V, Ind. Temp., SOP8	Small Outline Packages	APS6404L-3SQR-SN	3D model available Symbol and footprint available 3	1 Download Model
	IDT7132LA20JG Renesas Electronics	1	IDT SRAM Memory, IDT7132LA20JG- 16kbit	Plastic Leaded Chip Carrier	IDT7132LA20JG	3D model available Symbol and footprint available 3	1 Download Model
	IS62WV102416EBLL-45BLI Integrated Silicon Solution Inc.	1	1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM	BGA	IS62WV102416EBLL-45BLI	3D model available Symbol and footprint available 3	1 Download Model
	LY621024SN-35L Lyontek Inc.	1	LY621024SN-35L	Small Outline Packages	LY621024SN-35L	3D model available Symbol and footprint available 3	1 Download Model

	U62256ADK07LLG1 Alliance Memory	1	SRAM ZMD 32K x 8 5V Asynch	Dual-In-Line Packages	U62256ADK07LLG1	3D model available Symbol and footprint available 3	1 Download Model
	CY62128ELL-55SXE Infineon	1	SRAM 1Mb 55ns 128K x 8 Low Power SRAM	Small Outline Packages	CY62128ELL-55SXE	3D model available Symbol and footprint available 3	1 Download Model
	R1LV1616HBG-4SI Renesas Electronics	1	RENESAS - R1LV1616HBG-4SI - SRAM, 16 Mbit, 1M x 16bit, 2.7V to 3.6V, FBGA, 48 Pins, 45 ns	BGA	R1LV1616HBG-4SI	3D model available Symbol and footprint available 3	1 Download Model
	CY14B064I-SFXI Infineon	1	NVRAM 64Kb 3V 3.4Mhz 8K x 8 SPI nvSRAM	Small Outline Packages	CY14B064I-SFXI	3D model available Symbol and footprint available 3	1 Download Model
	IS62WV1288BLL-55QLI Integrated Silicon Solution Inc.	1	SRAM 1Mb 128Kx8 55ns Async SRAM	Small Outline Packages	IS62WV1288BLL-55QLI	3D model available Symbol and footprint available 3	1 Download Model
	23K256-E/ST Microchip	1	Microchip 23K256-E/ST SRAM Memory, 256kbit, 2.7 → 3.6 V, 50ns 8-Pin TSSOP	Small Outline Packages	23K256-E/ST	3D model available Symbol and footprint available 3	1 Download Model
	AS6C4008-55PIN Alliance Memory	1	SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM	Dual-In-Line Packages	AS6C4008-55PIN	3D model available Symbol and footprint available 3	1 Download Model
	M5M5V416BWG-70LI Mitsubishi	1	The M5M5V416B is a f amily of low v oltage 4-Mbit static RAMsorganized as 262,144-words by 16-bit, f abricated by Mitsubishi'shigh-perf ormance 0.25µm CMOS technology .	BGA	M5M5V416BWG-70LI	3D model available Symbol and footprint available 3	1 Download Model
	IS61WV102416FBLL-8BLI Integrated Silicon Solution Inc.	1	SRAM 16Mb,High-Speed,Async,1Mbx16, 8ns, 2.4v-3.6v, 48 Ball mBGA (6x8 mm), RoHS	BGA	IS61WV102416FBLL-8BLI	3D model available Symbol and footprint available 3	1 Download Model
	IS61LV6416-8TL Integrated Silicon Solution Inc.	1	SRAM 1Mb 64Kx16 8ns Async SRAM 3.3v	Small Outline Packages	IS61LV6416-8TL	3D model available Symbol and footprint available 3	1 Download Model
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