NTH4L Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	NTH4L067N65S3H onsemi	1	Power Field-Effect Transistor, 40A I(D), 650V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247		NTH4L067N65S3H	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTH4L040N65S3F onsemi	1	Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 158 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF); Kelvin contact; RoHS Compliant; Typ. RDS(on) = 32 mΩ; Typ. RDS(on) = 32 mΩ		NTH4L040N65S3F	3D model available Symbol and footprint not available 1	1 Download Model
	NTH4LN041N60S5H onsemi	1	650 V @ TJ = 150°C / Typ. RDS(on) = 32.8 mΩ; 100% Avalanche Tested; Pb−Free, Halogen Free / BFR Free and RoHS Compliant		NTH4LN041N60S5H	3D model available Symbol and footprint not available 1	1 Download Model
	NTH4L050N065SC1 onsemi	1	Power Field-Effect Transistor, 62.6A I(D), 650V, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		NTH4L050N065SC1	3D model not available Symbol and footprint not available 0	0 Build or Request

	NTH4LN022N120M3S onsemi	1	Power Field-Effect Transistor		NTH4LN022N120M3S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTH4LN061N60S5H onsemi	1	Ultra Low Gate Charge (Typ. Qg = 74.2 nC); Low Energy Related Output Capacitance (Typ. Coss(eff.) = 100 pF); Fast switching performance with robust body diode; 650 V @ TJ = 150°C; Typ. RDS(on) = 48.8 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.7 Ω		NTH4LN061N60S5H	3D model available Symbol and footprint not available 1	1 Download Model
	NTH4L040N65S3HFN onsemi	1	Power Field-Effect Transistor, 65A I(D), 650V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247		NTH4L040N65S3HFN	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTH4LN019N65S3H onsemi	1	700 V @ TJ = 150 oC; Low Effective Output Capacitance (Typ. Coss(eff.) = 2495 pF); Ultra Low Gate Charge (Typ. Qg = 282 nC); Fast switching performance with robust body diode; Kelvin Source configuration; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 15 mΩ; Internal Gate Resistance: 1.1 Ω		NTH4LN019N65S3H	3D model available Symbol and footprint not available 1	1 Download Model
	NTH4L060N065SC1 onsemi	1	Power Field-Effect Transistor, 50.3A I(D), 650V, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		NTH4L060N065SC1	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTH4LN030N120M3S onsemi	1	Power Field-Effect Transistor		NTH4LN030N120M3S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTH4L027N65S3F onsemi	1	700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 259 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; Kelvin contact; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 23 mΩ		NTH4L027N65S3F	3D model available Symbol and footprint not available 1	1 Download Model
	NTH4LN070N120M3S onsemi	1	Power Field-Effect Transistor		NTH4LN070N120M3S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTH4LN095N65S3H onsemi	1	Power Field-Effect Transistor, 30A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247		NTH4LN095N65S3H	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTH4LN040N120M3S onsemi	1	Power Field-Effect Transistor		NTH4LN040N120M3S	3D model not available Symbol and footprint not available 0	0 Build or Request

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