NTH4L Model Download Search Results
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NTH4L028N170M1
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1 | TO247-4LD package for low common source inductance; 18V to 20V Gate Drive; New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses; 100% Avalanche Tested | Other | NTH4L028N170M1 |
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NTH4L018N075SC1
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1 | RoHS Compliant; Zero reverse recovery current of body diode; Kelvin Source configuration; Typ. RDS(on) = 13.5 mΩ at Vgs = 18V; 100% UIL Tested; TJ = 175°C; Ultra Low Gate Charge (Typ. Qg = 262 nC); High Speed Switching with Low Capacitance (Coss = 365 pF) | Other | NTH4L018N075SC1 |
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NTH4L015N065SC1
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1 | Max RDS(on) = 18.7 mΩ at Vgs = 18V, Id = 60A; High Junction Temperature; 100% UIL Tested; RoHS Compliant; High Speed Switching and Low Capacitance; 650V rated | Other | NTH4L015N065SC1 |
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NTH4LN023N065M3S
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1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO247-4L, THIN LEADS NTH4LN023N065M3S ?55 to +175 °C | Other | NTH4LN023N065M3S |
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NTH4LN032N065M3S
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1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO247-4L, THIN LEADS , through hole , 139 mJ , ?55 °C to +175 °C | Other | NTH4LN032N065M3S |
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NTH4LN016N065M3S
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1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 16 mohm 650 V, M3S, TO247-4L, THIN LEADS , through hole , 180 mJ , ?55 °C to +175 °C | Other | NTH4LN016N065M3S |
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NTH4LN012N065M3S
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1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M3S, TO247-4L, Thin Leads , through hole , 259 mJ , ?55 °C to +175 °C | Other | NTH4LN012N065M3S |
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NTH4LN040N120M3S
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1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 36 mohm, 1200 V, M3S, TO247-4L, THIN LEADS , 143 mJ , ?55 °C to +175 °C | Other | NTH4LN040N120M3S |
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NTH4L067N65S3H
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1 | Power Field-Effect Transistor, 40A I(D), 650V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | NTH4L067N65S3H |
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NTH4L040N65S3F
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1 | Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 158 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF); Kelvin contact; RoHS Compliant; Typ. RDS(on) = 32 mΩ; Typ. RDS(on) = 32 mΩ | NTH4L040N65S3F |
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NTH4LN041N60S5H
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1 | 650 V @ TJ = 150°C / Typ. RDS(on) = 32.8 mΩ; 100% Avalanche Tested; Pb−Free, Halogen Free / BFR Free and RoHS Compliant | NTH4LN041N60S5H |
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NTH4L050N065SC1
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1 | Power Field-Effect Transistor, 62.6A I(D), 650V, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | NTH4L050N065SC1 |
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NTH4LN061N60S5H
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1 | Ultra Low Gate Charge (Typ. Qg = 74.2 nC); Low Energy Related Output Capacitance (Typ. Coss(eff.) = 100 pF); Fast switching performance with robust body diode; 650 V @ TJ = 150°C; Typ. RDS(on) = 48.8 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.7 Ω | NTH4LN061N60S5H |
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NTH4L027N65S3F
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1 | 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 259 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; Kelvin contact; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 23 mΩ | NTH4L027N65S3F |
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NTH4L040N65S3HFN
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1 | Power Field-Effect Transistor, 65A I(D), 650V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | NTH4L040N65S3HFN |
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NTH4LN019N65S3H
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1 | 700 V @ TJ = 150 oC; Low Effective Output Capacitance (Typ. Coss(eff.) = 2495 pF); Ultra Low Gate Charge (Typ. Qg = 282 nC); Fast switching performance with robust body diode; Kelvin Source configuration; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 15 mΩ; Internal Gate Resistance: 1.1 Ω | NTH4LN019N65S3H |
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NTH4L060N065SC1
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1 | Power Field-Effect Transistor, 50.3A I(D), 650V, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | NTH4L060N065SC1 |
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NTH4LN095N65S3H
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1 | Power Field-Effect Transistor, 30A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | NTH4LN095N65S3H |
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