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M30082040054X0PWAR
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30082040054X0PWAR |
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M30162040054X0ISAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040054X0ISAY |
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M10042040108X0PWAY
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10042040108X0PWAY |
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M30082040054X0ISAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30082040054X0ISAY |
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M30162040108X0PWAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040108X0PWAR |
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M10162040054X0PWAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040054X0PWAR |
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M10082040054X0PWAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10082040054X0PWAR |
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M30042040054X0PSAY
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040054X0PSAY |
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M10042040108X0IWAY
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10042040108X0IWAY |
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M10162040054X0PSAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0PSAR |
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M30042040108X0ISAY
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040108X0ISAY |
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FM24CL64B-GTR
Infineon
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1 | CYPRESS - INFINEON TECHNOLOGIES - FM24CL64B-GTR - Ferroelectric RAM (FRAM), 64 Kbit (8K x 8) I2C, 1 MHz, 2.7 V to 3.65 V Supply, SOIC-8 | Small Outline Packages | FM24CL64B-GTR |
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FM24CL16B-DG
Infineon
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1 | F-RAM IIC FRAM 16K 3V | Small Outline No-lead | FM24CL16B-DG |
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FM28V020-TG
Ramtron International Corp
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1 | 256Kbit Ferroelectric Nonvolatile RAM Organized as 32K x 8 1014 Read/Write Cycles NoDelay™ Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process | Small Outline Packages | FM28V020-TG |
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FM24V02A-G
Infineon
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1 | Cypress Semiconductor FM24V02A-G Serial-I2C FRAM Memory, 256kbit, 2 → 3.6 V SOIC 8-Pin | Small Outline Packages | FM24V02A-G |
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CY15V108QI-20LPXI
Infineon
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1 | FRAM 8Mbit Serial-SPI Interface 1.8V 8-Pin GQFN Standard | Small Outline No-lead | CY15V108QI-20LPXI |
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FM25CL64B-GTR
Infineon
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1 | FRAM 64Kbit Serial-SPI Interface 3.3V Automotive 8-Pin SOIC N T/R | Small Outline Packages | FM25CL64B-GTR |
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FM24V01A-GTR
Infineon
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1 | F-RAM F-RAM Memory Serial | Small Outline Packages | FM24V01A-GTR |
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CY15V104QSN-108LPXI
Infineon
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1 | F-RAM FRAM Excelon Ultra | Small Outline No-lead | CY15V104QSN-108LPXI |
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FM31L276-G
Infineon
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1 | F-RAM 64K w/RTC Pwr Mon WDT Bat Sw PF | Small Outline Packages | FM31L276-G |
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CY15E016Q-SXET
Infineon
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1 | F-RAM F-RAM Memory Serial | Small Outline Packages | CY15E016Q-SXET |
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FM24V10-G
Infineon
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1 | 1Mbit 128Kx8 Serial-I2C F-RAM SOIC8 FM24V10-G Serial-I2C FRAM Memory, 1Mbit, 2 to 3.6 V 8-Pin SOIC | Small Outline Packages | FM24V10-G |
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FM25W256-GTR
Infineon
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1 | CYPRESS - INFINEON TECHNOLOGIES - FM25W256-GTR - Ferroelectric RAM (FRAM), 256 Kbit (32K x 8) SPI, 20 MHz, 2.7 V to 5.5 V Supply, SOIC-8 | Small Outline Packages | FM25W256-GTR |
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FM1808B-SG
Infineon
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1 | F-RAM 256Kb 70ns 32K x 8 Parallel FRAM | Small Outline Packages | FM1808B-SG |
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FM25CL64B-G
Infineon
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1 | 64Kbit 8Kx8 Serial-SPI F-RAM SOIC8 FM25CL64B-G Serial-SPI FRAM Memory, 64kbit, 2.7 to 3.65 V 8-Pin SOIC | Small Outline Packages | FM25CL64B-G |
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