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NIS5132MN2TXG
onsemi
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1 | Integrated Power Device\r\n• Power Device Thermally Protected\r\n• No External Current Shunt Required\r\n• 9 V to 18 V Input Range\r\n• 44 m Typical\r\n• Internal Charge Pump\r\n• Internal Undervoltage Lockout Circuit\r\n• Internal Overvoltage Clamp (MN1 and MN2 versions)\r\n• ESD Ratings: Human Body Model (HBM); 2000 V\r\nMachine Model (MM); 200 V\r\n• These Devices are Pb−Free and are RoHS Compliant | Small Outline No-lead | NIS5132MN2TXG |
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MKW5032
Minmax
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1 | m y Over Voltage Protection y Soft Start y Remote On/Off Control y Six-Sided Shielding y Complies with EN55022 Class A y UL1950 Safety Approval y 2:1 Wide Input Range y MTBF > 600,000 Hours y 1500VDC Isolation y Efficiency up to 88% | Other | MKW5032 |
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SAK-XC161CS-32F40F BB-A
Infineon
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1 | 1 6 - B i t S i n g l e - C h i p M i c r o c o n t r o l l e r w i t h C 1 6 6 S V 2 C o r e | Quad Flat Packages | SAK-XC161CS-32F40F BB-A |
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TPS386000RGPR/BKN
Texas Instruments
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1 | The TPS3860x0 family of supply voltage supervisors (SVSs) can monitor four power rails that are greater than 0.4 V and one power rail less than 0.4 V (including negative voltage) with a 0.25% (typical) threshold accuracy. Each of the four supervisory circuits (SVS-n) assert a RESETn or RESETn output signal when the SENSEm input voltage drops below the programmed threshold. With external resistors, the threshold of each SVS-n can be programmed (where n = 1, 2, 3, 4 and m = 1, 2, 3, 4L, 4H). | Quad Flat No-Lead | TPS386000RGPR/BKN |
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ISL89401AR3Z
Renesas Electronics
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1 | ISL89400, ISL89401 The ISL89400, ISL89401 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. The ISL89400 has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL89401 (like those of the ISL89400) can now safely swing to the VDD supply rail. Finally, both parts are available in a very compact 9 Ld DFN package and an 8 Ld SOIC to m | Other | ISL89401AR3Z |
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826936-6
TE Connectivity
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1 | Body Features: Primary Product Color Green | Configuration Features: Number of Positions 6 | Connector Contact Load Condition Fully Loaded | Board-to-Board Configuration Parallel | Number of Rows 1 | PCB Mount Orientation Vertical | Contact Features: Contact Base Material Phosphor Bronze | Mating Square Post Dimension .025 INCH | PCB Contact Termination Area Plating Material Thickness 2 MICM | Mating Square Post Dimension .64 MM | Contact Underplating Material Nickel | PCB Contact Termination Area Plating M | Header, Vertical | 826936-6 |
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R5F212H1SNSP#U0
Renesas Electronics
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1 | The R8C/2H Group is supported only for customers who have already adopted these products. The RL78/G11 Group is recommended for new designs.The R8C/2G Group of single-chip MCUs incorporates the R8C/Tiny Series CPU core, employing sophisticated instructions for a high level of efficiency. With 1Mb of address space, and it is capable of executing instructions at high speed. In addition, the CPU core boasts a multiplier for high-speed operation processing.Power consumption is low, and the supported operating m | Small Outline Packages | R5F212H1SNSP#U0 |
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2-1445055-6
TE Connectivity
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1 | Configuration Features: PCB Mount Orientation Right Angle | Number of Power Positions 6 | Number of Positions 6 | Number of Rows 1 | Contact Features: Contact Mating Area Plating Material Tin | PCB Contact Termination Area Plating Material Thickness 2.54 MICM | Contact Mating Area Plating Material Thickness 2.54 MICM | Contact Retention Within Housing Without | PCB Contact Termination Area Plating Material Tin | Contact Type Pin | PCB Contact Termination Area Plating Material Thickness 100 MICIN | Contact M | Other | 2-1445055-6 |
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5102160-9
TE Connectivity
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1 | Body Features: Primary Product Color Black | Connector Profile Standard | Configuration Features: Number of Rows 2 | PCB Mount Orientation Right Angle | Number of Positions 40 | Contact Features: Contact Mating Area Plating Material Gold Flash over Palladium Nickel | PCB Contact Termination Area Plating Material Thickness 2.54 MICM | Mating Square Post Dimension .64 MM | Contact Current Rating (Max) 1 AMP | Contact Mating Area Plating Material Gold | Contact Type Pin | PCB Contact Termination Area Plating M | Other | 5102160-9 |
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2-1445053-2
TE Connectivity
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1 | Configuration Features: PCB Mount Orientation Vertical | Number of Rows 1 | Number of Power Positions 2 | Number of Positions 2 | Contact Features: Multiple Contact Types Without | Contact Layout Inline | Contact Retention Within Housing Without | Contact Type Pin | PCB Contact Termination Area Plating Material Thickness 100 MICIN | PCB Contact Termination Area Plating Material Thickness 2.54 MICM | Contact Current Rating (Max) 5 AMP | Contact Mating Area Plating Material Tin | Contact Mating Area Plating M | Other | 2-1445053-2 |
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843S304BKI-100LF
Renesas Electronics
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1 | The 843S304I-100 is a PLL-based clock generator specifically designed for low phase noise applications. This device generates a 100MHz differential LVPECL clock from a input reference of 25MHz. The input reference may be derived from an external source or by the addition of a 25MHz crystal to the on-chip crystal oscillator. An external reference is applied to the PCLK pins. The nominal output frequency of 100MHz may be margined by approximately ±5% by changing the M divider value via the I2C interface. The | Quad Flat No-Lead | 843S304BKI-100LF |
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5555164-1
TE Connectivity
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1 | Body Features: Connector Profile Low | Modular Jack Latch Orientation Standard - Latch Down | Configuration Features: Port Configuration Single Port | PCB Mount Orientation Right Angle | Port Matrix Configuration 1 x 1 | Number of Loaded Positions 8 | Status Light Type Not Illuminated | Number of Positions 8 | Connector Contact Density Standard | Contact Features: Contact Mating Area Plating Material Thickness 1.27 MICM | Contact Underplating Material Nickel | Contact Current Rating (Max) .2 AMP | Contact M | Other | 5555164-1 |
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ISL89400AR3Z
Renesas Electronics
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1 | ISL89400, ISL89401 The ISL89400, ISL89401 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. The ISL89400 has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL89401 (like those of the ISL89400) can now safely swing to the VDD supply rail. Finally, both parts are available in a very compact 9 Ld DFN package and an 8 Ld SOIC to m | Other | ISL89400AR3Z |
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ISL55211IRTZ-T7A
Renesas Electronics
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1 | The ISL55211 is a wideband, differential input to differential output amplifier offering 3 possible internal gain settings. Using fixed 500Ω internal feedback resistors, the amplifier may be configured for a differential gain of 2, 4 or 5V/V depending on which combination of input pins are connected to the signal source. Internal feedback capacitors controls the signal bandwidth to be a constant 1. 4GHz in all gain settings. Ideally suited for AC-coupled data acquisition applications, the output DC common m | Quad Flat No-Lead | ISL55211IRTZ-T7A |
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ISL5217KIZ
Renesas Electronics
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1 | The ISL5217 quad programmable upconverter (QPUC) is a QASK/FM modulator/FDM upconverter designed for high dynamic range applications such as cellular basestations. The QPUC combines shaping and interpolation filters, a complex modulator, and timing and carrier NCOs into a single package. Each QPUC can create four FDM channels. Multiple QPUCs can be cascaded digitally to provide for up to 16 FDM channels in multi-channel applications. The ISL5217 supports both vector and FM modulation. In vector modulation m | BGA | ISL5217KIZ |
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2-5332095-4
TE Connectivity
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1 | Body Features: Sleeve Material Copper | Sleeve Plating Material Tin | Configuration Features: Compatible With Wire & Cable Type Discrete Wire | Contact Features: Contact Mating Area Plating Material Thickness 30 MICM | Contact Spring Plating Thickness .762 MICM | Contact Spring Plating Thickness 30 MICIN | Contact Spring Plating Material Gold | Contact Mating Area Plating Material Thickness 30 MICIN | Contact Current Rating (Max) 3 AMP | Contact Base Material Beryllium Copper | Contact Mating Area Plating M | Other | 2-5332095-4 |
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RAA220001GNP#HA0
Renesas Electronics
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1 | The RAA220001 is a high frequency MOSFET driver designed to drive upper and lower power N-channel MOSFETs in a synchronous rectified buck converter topology. In the RAA220001, the upper and lower gates are both driven to an externally applied voltage that provides the capability to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to m | Small Outline No-lead | RAA220001GNP#HA0 |
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ISL8117AFRZ
Renesas Electronics
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1 | The ISL8117A is a synchronous buck controller to generate POL voltage rails and bias voltage rails for a wide variety of applications in industrial and general purpose segments. Its wide input and output voltage ranges make it suitable for telecommunication and after-market automotive applications. ISL8117A is a derivative from the ISL8117 by replacing its CLKOUT pin with COMP pin to provide flexibility to customers to configure the voltage loop compensation externally.The ISL8117A uses the valley current m | Quad Flat No-Lead | ISL8117AFRZ |
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STGF20M65DF2
STMicroelectronics
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1 | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss | Transistor Outline, Vertical | STGF20M65DF2 |
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STGP6M65DF2
STMicroelectronics
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1 | Trench gate field-stop IGBT M series, 650 V 6 A low loss | Transistor Outline, Vertical | STGP6M65DF2 |
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ECA0JM223
Panasonic
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1 | Panasonic 22000μF 6.3 V dc Aluminium Electrolytic Capacitor, M Series 2000h 18 x 35.5mm | Capacitor, Polarized Radial Diameter | ECA0JM223 |
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STGP4M65DF2
STMicroelectronics
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1 | Trench gate field-stop IGBT, M series 650 V, 4 A low loss | Transistor Outline, Vertical | STGP4M65DF2 |
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STGWA25M120DF3
STMicroelectronics
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1 | Trench gate field-stop IGBT, M series 1200 V, 25 A low loss | Transistor Outline, Vertical | STGWA25M120DF3 |
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ECA-1CM470
Panasonic
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1 | Panasonic Aluminium Electrolytic Capacitor 47μF 16V dc 5mm M Series Aluminium, Through Hole Electrolytic, ±20% | Capacitor, Polarized Radial Diameter | ECA-1CM470 |
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ECA-1HM330B
Panasonic
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1 | Aluminum Electrolytic Capacitors - Radial Leaded 33UF 50V ELECT M RADIAL | Capacitor, Polarized Radial Diameter | ECA-1HM330B |
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