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M30162040108X0IWAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040108X0IWAY |
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ESP32-PICO-V3-ZERO(P103AH0000PH3Q0)
Espressif Systems
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1 | WiFi Modules (802.11) SMD module, ESP32-PICO-V3 with 4MB flash die inside, ESP32 ECO V3, PCB antenna, for Alexa Connect Kit (ACK). | Other | ESP32-PICO-V3-ZERO(P103AH0000PH3Q0) |
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RMLV1616AGSD-5S2#AC0
Renesas Electronics
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1 | The RMLV1616A Series is a family of 16-Mbit static RAMs organized 1, 048, 576-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV1616A Series has realized higher density, higher performance and low power consumption. The RMLV1616A Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 48pin TSOP (I), 52pin TSOP (II) or 48-ball fine pitch ball grid array. | Small Outline Packages | RMLV1616AGSD-5S2#AC0 |
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ESP32-WROVER-E (16MB)
Espressif Systems
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1 | WiFi Modules (802.11) PCB Antenna | Other | ESP32-WROVER-E (16MB) |
3
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ESP32-WROOM-32D (16MB)
Espressif Systems
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1 | WiFi Modules (802.11) SMD Module, ESP32-D0WD, 128Mbits SPI flash, UART mode, PCB antenna | Other | ESP32-WROOM-32D (16MB) |
3
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ESP32-WROOM-32 (16MB)
Espressif Systems
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1 | WiFi Modules (802.11) | Other | ESP32-WROOM-32 (16MB) |
3
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MC9S08AC16MBE
NXP
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1 | 8 BIT 16K FLASH 4K RAM | Other | MC9S08AC16MBE |
2
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KP-3216MBC
Kingbright
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1 | Kingbright KP-3216MBC, 1206 466 nm Blue LED, 3216 (1206) SMD package | LEDs Chip | KP-3216MBC |
2
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IS25LP016D-JBLE-TR
Integrated Silicon Solution Inc.
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1 | NOR Flash 16M QSPI, 8-pin SOP | Small Outline Packages | IS25LP016D-JBLE-TR |
3
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ESP-WROOM-32 (16MB)
Espressif Systems
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1 | WiFi Modules (802.11) SMD Module, ESP32-D0WDQ6, 128Mbits SPI flash, UART Mode | Other | ESP-WROOM-32 (16MB) |
3
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ESP32-WROVER-B (16MB)
Espressif Systems
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1 | WiFi Modules (802.11) SMD Module, ESP32-D0WD, 64Mbits PSRAM, 128Mbits SPI flash, PCB Antenna | Other | ESP32-WROVER-B (16MB) |
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ESP32-WROVER-IE (16MB)
Espressif Systems
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1 | WiFi Modules (802.11) IPEX antenna | Other | ESP32-WROVER-IE (16MB) |
2
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ESP32-WROVER-I (16MB)
Espressif Systems
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1 | WiFi / 802.11 Modules SMD Module, ESP32-D0WDQ6, 32Mbits PSRAM, 128Mbits SPI flash, IPEX Antenna connector | Other | ESP32-WROVER-I (16MB) |
3
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MC9S08AC16MBE
NXP
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1 | 8 BIT 16K FLASH 4K RAM | Other | MC9S08AC16MBE |
2
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M10162040108X0ISAY
Renesas Electronics
|
1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040108X0ISAY |
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M30162040108X0ISAY
Renesas Electronics
|
1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040108X0ISAY |
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M10162040108X0ISAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040108X0ISAR |
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M10162040108X0PWAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040108X0PWAR |
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M10162040054X0ISAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0ISAR |
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M10162040054X0PWAY
Renesas Electronics
|
1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040054X0PWAY |
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M30162040108X0PSAY
Renesas Electronics
|
1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040108X0PSAY |
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M10162040054X0IWAY
Renesas Electronics
|
1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040054X0IWAY |
3
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M30162040108X0ISAR
Renesas Electronics
|
1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040108X0ISAR |
3
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RMLV1616AGBG-5S2#KC0
Renesas Electronics
|
1 | The RMLV1616A Series is a family of 16-Mbit static RAMs organized 1, 048, 576-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV1616A Series has realized higher density, higher performance and low power consumption. The RMLV1616A Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 48pin TSOP (I), 52pin TSOP (II) or 48-ball fine pitch ball grid array. | BGA | RMLV1616AGBG-5S2#KC0 |
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RMLV1616AGSD-5S2#HA1
Renesas Electronics
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1 | The RMLV1616A Series is a family of 16-Mbit static RAMs organized 1, 048, 576-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV1616A Series has realized higher density, higher performance and low power consumption. The RMLV1616A Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 48pin TSOP (I), 52pin TSOP (II) or 48-ball fine pitch ball grid array. | Small Outline Packages | RMLV1616AGSD-5S2#HA1 |
3
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