RF Small Signal Field-Effect Transistors Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	BFQ67 NXP	1	NXP Semiconductors NPN 8 GHz wideband transistor SOT23 TO-236AB	SOT23 (3-Pin)	BFQ67	3D model available Symbol and footprint available 3	1 Download Model
	BFG135,115 NXP	1	RF TRANS NPN 15V 7GHZ SOT223	SOT223 (3-Pin)	BFG135,115	3D model available Symbol and footprint available 3	1 Download Model
	BFU590G NXP	1	NPN silicon microwave transistor for high speed, medium power applications in a plastic,4-pin SOT223 package.The BFU590G is part of the BFU5 family of transistors, suitable for small signal to mediumpower applications up to 2 GHz.	SOT223 (3-Pin)	BFU590G	3D model available Symbol and footprint available 3	1 Download Model
	BFR340L3E6327XTMA1 Infineon	1	RF Transistor NPN 9V 10mA 14GHz 60mW Surface Mount PG-TSLP-3-1	Other	BFR340L3E6327XTMA1	3D model available Symbol and footprint available 3	1 Download Model

	BFU520YX NXP	1	NXP - BFU520YX - Bipolar - RF Transistor, Dual NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-363	Other	BFU520YX	3D model not available Symbol and footprint available 2	1 Download Model
	BFP840FESDH6327XTSA1 Infineon	1	RF Transistor 6GHz LowNoise SiGe SOT-343	SO Transistor Flat Lead	BFP840FESDH6327XTSA1	3D model available Symbol and footprint available 3	1 Download Model
	BFP650 Infineon	1	Transistor, NPN, RF, BFP650 Infineon BFP650 NPN RF Bipolar Transistor, 0.15 A, 4 V, 4-Pin SOT-343	Other	BFP650	3D model not available Symbol and footprint available 2	1 Download Model
	2SC2053 Mitsubishi	1	NPN Epitaxial Planar Type, TO-92	Other	2SC2053	3D model not available Symbol and footprint available 2	1 Download Model
	BFU630F,115 NXP	1	RF Bipolar Transistors Single NPN 21GHz	Other	BFU630F,115	3D model not available Symbol and footprint available 2	1 Download Model
	BFU730F,115 NXP	1	Trans GP BJT NPN 2.8V 0.03A 4-Pin(3+Tab) DFP T/R	Other	BFU730F,115	3D model available Symbol and footprint available 3	1 Download Model
	BFU710F NXP	1	RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS	Other	BFU710F	3D model not available Symbol and footprint available 2	1 Download Model
	2SC4083T106N ROHM Semiconductor	1	Bipolar Transistors - BJT NPN 11V 50MA SOT-323	SO Transistor Flat Lead	2SC4083T106N	3D model available Symbol and footprint available 3	1 Download Model
	BFT92W NXP	1	NXP BFT92W PNP RF Bipolar Transistor, 25 mA, 15 V, 3-Pin SOT-323	SOT23 (3-Pin)	BFT92W	3D model available Symbol and footprint available 3	1 Download Model
	2SC4725TLP ROHM Semiconductor	1	Bipolar Transistors - BJT NPN 20V 50MA	Other	2SC4725TLP	3D model not available Symbol and footprint available 2	1 Download Model
	BFU580Q NXP	1	NXP Semiconductors BFU580Q/MPT3///REEL 7 Q1/T1 *STANDARD MARK SMD	Other	BFU580Q	3D model available Symbol and footprint available 3	1 Download Model

	NE85633-T1B-A Renesas Electronics	1	NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold	SOT23 (3-Pin)	NE85633-T1B-A	3D model available Symbol and footprint available 3	1 Download Model
	2SC1215 Panasonic	1	Silicon NPN epitaxial planer type	Other	2SC1215	3D model available Symbol and footprint available 3	1 Download Model
	MPSH10 onsemi	1	RF Transistor NPN 25V 650MHz 350mW Through Hole	Other	MPSH10	3D model available Symbol and footprint available 3	1 Download Model
	HFA3096BZ Renesas Electronics	1	The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while	Small Outline Packages	HFA3096BZ	3D model available Symbol and footprint available 3	1 Download Model
	MMBT5179 onsemi	1	RF Bipolar Transistors NPN RF Transistor	SOT23 (3-Pin)	MMBT5179	3D model available Symbol and footprint available 3	1 Download Model
	2SC5227A-4-TB-E onsemi	1	Low-noise : NF = 1.0 dB typ (f = 1 GHz); High gain : Forward Transfer Gain = 12 dB typ (f = 1 GHz); High cut-off frequency : fT = 7 GHz typ	SOT23 (3-Pin)	2SC5227A-4-TB-E	3D model not available Symbol and footprint available 2	1 Download Model
	HFA3101BZ Renesas Electronics	1	The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil's bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics that have been maximized through careful attention to circuit design and layout, making this product ideal for communication circuits. For use in mixer applications, the cell provides high gain and good cancellation of 2nd order distortion terms.	Small Outline Packages	HFA3101BZ	3D model available Symbol and footprint available 3	1 Download Model
	ZUMTS17NTA Diodes Incorporated	1	Bipolar Transistors - BJT SINGLE NPN 3.2GHz 330mW	SOT23 (3-Pin)	ZUMTS17NTA	3D model available Symbol and footprint available 3	1 Download Model
	FMB3946 onsemi	1	ON Semi FMB3946 Dual NPN + PNP Transistor, 200 mA, 40 V, 6-Pin SOT-23	SOT23 (6-Pin)	FMB3946	3D model available Symbol and footprint available 3	1 Download Model
	HFA3127BZ Renesas Electronics	1	The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while	Small Outline Packages	HFA3127BZ	3D model available Symbol and footprint available 3	1 Download Model
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